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IRPS 2024: Grapevine, TX, USA
- IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, TX, USA, April 14-18, 2024. IEEE 2024, ISBN 979-8-3503-6976-2
- Pramoda Vishnumurthy, Ruben Alcala, Thomas Mikolajick
, Uwe Schroeder, Luis Azevedo Antunes, Alfred Kersch
Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited). 1-10 - Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae:
Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology. 1-6 - Valeriy Sukharev, Jun-Ho Choy, Armen Kteyan, J. Shuster-Passage, Seungman Choi, Martin Gall:
A Unified Physics-Based Stochastic Model for EM-Induced Resistance Degradation in BEoL Interconnect Segments. 1-10 - Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng
Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. 1-5 - Tommaso Rollo, Hansel Lo, Luca Larcher, Christopher Olsen, Milan Pesic:
Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization Study. 1-5 - Shida Zhang
Measurement of Aging Effect in a Digitally Controlled Inductive Voltage Regulator in 65nm. 1-6 - D. Tiernc, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den Bosch, Maarten Rosmeulen:
Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. 1-5 - Amandeep Singh Bhatia, Sabre Kais, Muhammad Ashraful Alam:
Robustness of Quantum Federated Learning (QFL) Against "Label Flipping Attacks" for Lithography Hotspot Detection in Semiconductor Manufacturing. 1-4 - Jun Furuta, Shotaro Sugitani, Ryuichi Nakajima
A Partially-redundant Flip-flip Suitable for Mitigating Single Event Upsets in a FD-SOI Process with Low Performance Overhead. 1-4 - Rajarshi Roy Chaudhuri, Vipin Joshi, Saniya S. Wani, Simran R. Karthik, Rasik Rashid Malik, Mayank Shrivastava:
Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs. 1-6 - Delgermaa Nergui, Mozhgan Hosseinzadeh
The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs. 1-5 - Alberto Marcuzzi, M. Avramenko, Carlo De Santi
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. 1-5 - Y. Fang, Alicja Lesniewska, Ivan Ciofi, Philippe Roussel, Chen Wu, Victor Vega-Gonzalez, Ingrid De Wolf, Kris Croes:
BEOL tip-to-tip dielectric reliability characterization using a design-representative test structure. 1-7 - K. C. Celio, S. Sen, E. Nisenboim, P. M. Pardy, B. Nguyen, V. Le, W. Nolting, S. Kumar, C. A. Peterson, A. Raveh, K. Johnson, B. Stripe, F. Su, M. Lun, S. Lewis, R. I. Spink, W. Yun:
Laboratory X-Ray-Assisted Device Alteration for Fault Isolation and Post-Silicon Debug. 1-5 - Wei Chun Wang, Shida Zhang
Measurement of Aging Effect on an Analog Computing-In-Memory Macro in 28nm CMOS. 1-4 - Jingwei Sun, Zongwei Wang, Jiajun Gao, Linbo Shan, Qishen Wang, Yuhang Yang, Yimao Cai, Ru Huang:
ASAP: An Efficient and Reliable Programming Algorithm for Multi-level RRAM Cell. 1-4 - Sebastian M. Witkowski, Gary Anderson, Peter Abramowitz:
Soft Error Induced System Errors in Image Inference Applications with Glow-Compiled CNNs on MCUs. 1-5 - Devanarayanan Ettisserry, Angelo Visconti, Mauro Bonanomi, Riccardo Pazzocco, Andrea Locatelli, Alessandro Sebastiani, Ashonita Chavan, Matthew Hollander, Giorgio Servalli, Alessandro Calderoni, Nirmal Ramaswamy:
Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAM. 1-8 - Nicholas J. Pieper, M. Chun, Yoni Xiong, H. M. Dattilo, Jenna B. Kronenberg, Sanghyeon Baeg, Shi-Jie Wen, Rita Fung, D. Chan, C. Escobar, Bharat L. Bhuva:
Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems. 1-7 - Sangmin Oh, Taeyoung Jeong, Junghwan Yum, Minhyuk Lim, Yoohwan Kim, Bongyong Jeong, Jeongmin Jo, Hyewon Shim, Shin-Young Chung, Paul Jung:
An Analysis of CDM-induced BTI-like Degradation using VF-TLP in Advanced FinFET Technology. 1-5 - Robert W. Herrick:
Reliability testing for silicon photonics and optoelectronics (Invited). 1-10 - Jinghan Xu, Zheng Zhou, Mengqi Fan, Zixuan Sun, Shuhan Wang, Zili Tang, Fei Liu, Xiaoyan Liu:
Deep Learning-Assisted Trap Extraction Method from Noise Power Spectral Density for MOSFETs. 1-7 - Anirudh Varanasi
Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current. 1-7 - Markus Herklotz, I. Kühn, Oscar D. Restrepo, S. Siemes, S. Choi, H. Mau:
EDA method to address interconnect reliability and reduce overdesign in custom analog designs. 1-6 - Kasidit Toprasertpong, Eishin Nako, Shin-Yi Min, Zuocheng Cai, Seong-Kun Cho, Rikuo Suzuki, Ryosho Nakane, Mitsuru Takenaka, Shinichi Takagi:
Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited). 1-6 - Po-Hao Tseng, Yu-Hsuan Lin, Feng-Min Lee, Tian-Cig Bo, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu:
Reliability Assessment for an In-3D-NAND Approximate Searching Solution. 1-6 - Xinze Li, Yiqin Zeng, Yuxuan Wu, Ying Sun, Junru Qu, Chengji Jin, Jiani Gu, Rongzong Shen, Gaobo Lin, Dawei Gao, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han:
Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications. 1-5 - Andrea Vici, Robin Degraeve, Naoto Horiguchi, Ingrid De Wolf, Jacopo Franco:
SILC and TDDB reliability of novel low thermal budget RMG gate stacks. 1-6 - Y. Mitani, T. Suzuki, Y. Miyaki:
Re-consideration of Correlation between Interface and Bulk Trap Generations using Cryogenic Measurement. 1-5 - Pan Zhao, Jinghan Xu, Taoyu Zhou, Songhan Zhao, Naiqi Liu, Xinpeng Li, Yandong He, Xiaoyan Liu, Gang Du:
Self-Heating Effect of Device-Circuit with Back-side Power Delivery Network beyond 3nm Node. 1-6 - Mitesh Goyal, Mukesh Chaturvedi, Raju Kumar, Mahesh Vaidya, Mayank Shrivastava:
Load-line Dependent Current Filament Dynamics in N anoscale SCR Devices. 1-6 - Ying Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco:
Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. 1-7 - X. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy, Florian Cacho:
Non-conducting Hot carrier temperature activation and temperature sense effect. 1-6 - J. Kim, T. Daniel Loveless, J. Pew, R. Young, D. Reising, M. Nour, P. Manos, M. Chambers, Hugh J. Barnaby, Jereme Neuendank:
On-Chip Characterization of Random Telegraph Signal Noise in Bulk 90 nm CMOS. 1-6 - Subrat Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, A. Sharma, G. Mirabeli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert:
Thermal Performance Evaluation of Multi-Core SOCs Using Power-Thermal Co-Simulation. 1-6 - Ruofei Hu, Jianshi Tang, Yue Xi, Zhixing Jiang, Yuyao Lu, Chengxiang Ma, Junchen Li, Bin Gao, He Qian, Huaqiang Wu:
Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAM. 1-6 - Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae:
Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence. 1-5 - M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. 54 - Yuchen Wu, Fanyu Liu, Bo Li, Jiangjiang Li, Siyuan Chen, Yang Huang, Jiamin Li, Tiexin Zhang, Jing Wan, Yong Xu:
Research on the Latch-Up Mechanism of DSOI at High Temperature. 16 - Tianjiao Liu, Michael Cook, Chris Kendrick:
Repetitive Pulse Testing for LDMOS Transistor Reliability. 50 - Matthew Drallmeier, Yujie Zhou, Elyse Rosenbaum:
On-Chip Single-Shot Pulse Generator for TDDB Characterization on a Sub-Nanosecond Timescale. 8 - Zirui Wang, Haoran Wang, Yuxiao Wang, Zixuan Sun, Lang Zeng, Runsheng Wang, Ru Huang:
New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature. 6 - Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka:
Performance and Reliability of Nanosheet Oxide Semiconductor FETs with ALD-Grown InGaO for 3D Integration (Invited). 9 - Florian Cacho, P. Cathelin, Joycelyn Hai, S. Bouvot, J. Nowakowski, M. Martinez, R. Debroucke, S. Jean, R. Paulin, J. Antonijevic, X. Federspiel, Nicolas Planes, Giuseppe Papotto, Alessandro Parisi, Alessandro Finocchiaro, Andrea Cavarra, Alessandro Castorina, Claudio Nocera, Giuseppe Palmisano:
Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS. 4 - Rakesh Ranjan, Pavitra R. Perepa, Ki-Don Lee, Ashish Kumar Jha, Kartika C. Sahoo, Kayla N. Sanders, Robert Moeller, Prateek Sharma, Minhyo Kang, Peter Kim, Kwanjae Song, Yongwoo Jeon, Seungho Kim, Hyewon Shim, Shin-Young Chung, Ju Kwang Kim:
A Systematic Study of HCI Improvement in FinFET with Source/Drain Implant and Geometry Modulation. 5 - Zeping Weng
Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM Applications. 11 - Pablo Saraza-Canflanca, Dishant Sangani, Javier Diaz-Fortuny
Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays. 8 - J. Shuster-Passage, S. Abdel Razek, M. Mattoo, Meike Hauschildt, Seungman Choi, Martin Gall, Armen Kteyan, Jun-Ho Choy, Valeriy Sukharev, Matthias Kraatz, J. R. Lloyd:
A Novel Method for the Determination of Electromigration-Induced Void Nucleation Stresses. 10 - Sihao Chen
Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET. 7 - Longda Zhou
Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM. 1-6 - Jeevesh Kumar, Aadil Bashir Dar, Asif A. Shah, K. M. Amogh, Sumana Chattaraj, Utpreksh Patbhaje, Anand Kumar Rai, Rupali Verma, Mayank Shrivastava:
Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat Spreaders. 1-5 - Limeng Shi, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori:
Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs. 1-6 - Ricardo Ascázubi, Bahar Ajdari, Curtis Shirota, Stephen Ramey:
Hot-Carrier Aging by Ultrafast Laser on 22FLL FinFET Technology. 1-6 - B. Bittel, M. Shamsa, Benson Inkley, A. Gur, David P. Lerner, M. Adams:
Data Center Silent Data Errors: Implications to Artificial Intelligence Workloads & Mitigations. 1-5 - Davide Favero, Carlo De Santi
$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. 1-4 - Yiming Qu, Chu Yan, Yaru Ding, Yi Zhao:
Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs. 1-6 - Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. 1-9 - O. Varela Pedreira, Youqi Ding, D. Coenen, Philippe Roussel, A. S. Saleh, Veerle Simons, Houman Zahedmanesh, Ivan Ciofi, Kris Croes:
De-Coupling Thermo-Migration from Electromigration Using a Dedicated Test Structure. 1-5 - Kaushik Mysore:
2.5D/3D Packaging and Reliability: New Frontiers, Old Paradigms, and Opportunities. 1-8 - M. Gouveia da Cunha, Sébastien Place, O. Gauthier, N. Virollet, M. Vignetti, Philippe Martin-Gonthier, Pierre Magnan, Vincent Goiffon:
Design Techniques Evaluation to Mitigate RTS Noise Effect in Column ADC of 3D Stacked Image Sensors. 67 - Y. Guo, Robin Degraeve, Michiel Vandemaele, Pablo Saraza-Canflanca, Jacopo Franco, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. 1-7 - Shudong Huang, Srivatsan Parthasarathy, Yuanzhong Paul Zhou, Jean-Jacques Hajjar, Elyse Rosenbaum:
Reduced RC Time Constant High Voltage Tolerant Supply Clamp for ESD Protection in 16nm FinFET Technology. 1-7 - P. Srinivasan, Oscar H. Gonzalez, Oscar D. Restrepo, J. Lestage, Shafi Syed, W. Taylor, Anirban Bandyopadhyay, Martin Gall, S. Ludvik:
Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers. 1-6 - Hussam Amrouch, Victor M. van Santen, Javier Diaz-Fortuny
Machine Learning Unleashes Aging and Self-Heating Effects: From Transistors to Full Processor (Invited Paper). 1-8 - P. Kumar, M. Krummenacher, H. G. Medeiros, S. Race, P. Natzke, I. Kovacevic-Badstübner, M. E. Bathen, U. Grossner:
Exploring the border traps near the SiO2-SiC interface using conductance measurements. 1-6 - Kateryna Serbulova
Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing Applications. 1-7 - Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu, Shengnan Zhu:
Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress. 1-6 - Rodolfo A. Rodriguez-Davila, L. Fernandez-Izquierdo, J. Fink, T. Moise, Robert C. Baumann, B. Gnade, Manuel Quevedo-Lopez, Chadwin D. Young
Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiation. 1-6 - Hariram Mohanram, Harikrishnan Kumarasamy
Study of Thermomechanical Damage Mechanism in Al Interconnects in Al-SiO2 structure by High Density Peak Current. 1-6 - Manu Shamsa, David Lerner:
Defect Mechanisms Responsible for Silent Data Errors. 1-5 - M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico:
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. 1-6 - S. R. Stein, J. Kim, Suman Das
Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress. 1-5 - Karansingh Thakor, Payel Chatterjee, Souvik Mahapatra:
A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions. 1-6 - Harrison P. Lee, Delgermaa Nergui, Jeffrey W. Teng
Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures. 1-4 - C. W. Lin, P. C. Tsao, Y. L. Yang, C. C. Sun, C. C. Huang, C. W. Chen, C. K. Chang, Y. J. Ting, K. Koh, Ross Lee, W. C. Chen, Y. S. Huang, M. Z. Lee, C. T. Lai, T. H. Lee:
Utilizing Transformer Deep Learning Based Outlier Detection to Screen Out Reliability Weak ICs. 1-5 - Minki Cho, Balkaran Gill, Rahul Sharma, Shiv Gupta:
Adaptive Clock Gating for Improving Wear out induced Duty Cycle Shift in the Clock Network. 1-4 - Zhaomeng Gao, Tianjiao Xin, Cheng Liu, Yilin Xu, Yiwei Wang, Yunzhe Zheng, Rui Wang, Xiaotian Li, Yonghui Zheng, Kai Du, Diqing Su, Zhaohao Zhang, Huaxiang Yin, Weifeng Zhang, Chao Li, Xiaoling Lin, Haitao Jiang, Sannian Song, Zhitang Song, Yan Cheng, Hangbing Lyu:
Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures. 1-5 - M. Kang, M. Chang, Y. Park, C. Noh, S. H. Hong, B. Park, Y. H. Park, Y. C. Jung, W. S. Lim, G. H. Kim, Y. Lee, H. Yang, D. Shin, J. G. Yang, K. H. Cho, W. C. Jeong, H.-J. Cho, Wook-Hyeon Kwon, D. W. Kim, K. Rim, J. H. Song:
Device Design and Reliability of GAA MBCFET. 1-6 - Yongkang Xue, Miaojia Yuan, Yu Li, Da Wang, Maokun Wu, Pengpeng Ren, Lining Zhang, Runsheng Wang, Zhigang Ji, Ru Huang:
Investigation of Positive Bias Temperature Instability in advanced FinFET nodes. 1-5 - G. Puebla Hellmann, B. Josteinsson, R. Mahjoub, S. Josephy, A. Morales:
Scanning NV Microscopy - Tracing Currents at the Nanometer Scale. 1-6 - Jungchul Lee, EC Kwon, SH Yoon, R. G. Oh, S. Y. Park, S. H. Youn, K. R. Choi, T. W. Kim, M. C. Kim, J. H. Park, Y. W. Ko, Y. D. Kim, J. S. Moon, H. A. Park, K. O. Hong, J. Y. Yang, J. Y. Yoon, J. M. Yoon, J. M. Lee, J. H. Kim, H. Y. Yoo, S. J. Kim, N.-H. Lee, S. H. Lee, K. S. Kwon, I. G. Jung, S. Y. Lee, H.-J. Kim, Sangwoo Pae:
Virtual FA Methodology for DRAM: Real-Time Analysis and Risk Assessment Method Using Telemetry. 1-7 - Ernest Y. Wu, Brian T. McGowan, Ronald Bolam, Huai Huang, Huimei Zhou, Miaomiao Wang:
A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction. 1-9 - Mehak Ashraf Mir, A. Thakare, Mohammad Ateeb Munshi, V. Avinash, Saniya S. Wani, Zubear Khan, Rajarshi Roy Chaudhuri, Simran R. Karthik, Rasik Rashid Malik, Vipin Joshi, Mayank Shrivastava:
On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. 1-5 - M. Boito, Manuel Fregolent, Carlo De Santi
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach. 1-5 - Luca Chiavarone, Gianluca Nicosia, Niccolò Righetti, Yingda Dong:
Experimental Segmentation of Vertical Charge Loss Mechanisms in Charge Trap-Based 3D NAND Arrays. 1-5 - Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen:
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. 1-6 - Shiyu Xia, Longda Zhou, Kewei Wang, Xiaobin Fan, Yongkang Xue, Qi Shan, Hannian Wang, Pengpeng Ren, Zhigang Ji, Ru Huang:
Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED. 1-7 - Ricardo Ascázubi, F. Rogelio Palomo, José Manuel Quesada, Miguel Antonio Cortes-Giraldo, Jose Antonio Pavón-Rodriguez:
Neutron and Laser Irradiation of Si and Ge Diodes. 1-5 - C. H. Chiang, K. P. Sou, D. S. Huang, J. H. Lee:
A Comprehensive Hot Carrier Injection with Voltage Ramp Stress (HCI-VRS) through Different Model Verification for More than Moore Diversity Application. 1-4 - Hsi-Yu Kuo, Yu-Lin Chu, Hung-Da Dai, Chun-Chi Wang, Pei-Jung Lin, Shu-Cheng Kuo, Ethan Guo, Ya-Min Zhang, Yu-Ti Su, Chia-Lin Hsu, Kuan-Hung Chen, Tsung-Yuan Chen, Te-Liang Li, Ray Huang, Kuo-Ji Chen, Ming-Hsiang Song, Ryan Lu, Kejun Xia:
Layout Guidelines against Charging Damage from the Well-Side Antennas in Separated Power Domains. 1-6 - Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Khandker Akif Aabrar, Taeyoung Song
Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions. 1-5 - Utpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Aadil Bashir Dar, Mayank Shrivastava:
Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETs. 1-7 - Chen-Wei Hsu
Embedded Deep-Nwell Collector Used to Improve Latch-Up Immunity of Multi-Functional I/O Buffer with Indirect Power-Connected N-Well. 1-4 - Qiao Teng, Yongyu Wu, Junzhe Kang, Kai Xu, Dawei Gao:
Impact of Lightly Doped Drain on Hot Carrier Degradation Variability in N-FETs and SRAM Cells. 1-4 - Mitesh Goyal, Mukesh Chaturvedi, Raju Kumar, Mahesh Vaidya, Mayank Shrivastava:
Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCR. 1-6 - Ernest Y. Wu, Takashi Ando, Paul Jamison:
General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition. 1-8 - Chu Yan, Yaru Ding, Yiming Qu, Yi Zhao:
Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs. 1-6 - Soojung Hwang, Jongkyu Kim, Juntae Kim, Dahyun Cha, Minho Kim, Dongkyu Jang, Sunghak Cho, Seokhyang Kim, Jaeseong Park, Hyungjoon Kim, Sukwon Yu, Boyoung Song, Hyodong Ban:
Interface Engineering of Trench-Ox for Modern DRAM Devices. 1-4 - Ayan K. Biswas, Daniel J. Lichtenwalner, Jae-Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas:
Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. 1-5 - SungMan Rhee, Sung-Pyo Park, Sangku Park, Yuchul Hwang, Sangwoo Pae, Jun Meng, Yoonju Park:
V-Ramp VBD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk. 1-6 - Jinsoo Bae, H. G. Noh, S. J. Yoo, I. J. Choi, G. H. Bae, Y. M. Shim, S. G. Lee, H. Jang, S. M. Lee, G. H. Chang, K. S. Kwon, C. B. Yoon, S. Y. Lee, J. W. Pyun, H. J. Kim, S. B. Ko, Y. C. Hwang, S. Pae:
Thermo-Mechanical Reliability Characteristics of 8H HBM3. 1-6 - Shuying Wang, Yewei Zhang, Yunjoong Kim, Pengpeng Ren, Zhigang Ji:
A Thermal Profile Prediction Methodology for Nanosheet Circuits Featuring Cross-Layer Thermal Coupling Effect. 1-6 - Ryuichi Nakajima
An Approach to Neutron-Induced SER Evaluation Using a Clinical 290 MeV/ u Carbon Beam and Particle Transport Simulations. 1-4 - J. Laguerre, Simon Martin, Jean Coignus, Catherine Carabasse, Marc Bocquet, François Andrieu, Laurent Grenouillet:
Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays. 1-7 - Sandeep R. Bahl, Jungwoo Joh, Fei Yang:
Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited). 1-7 - Anirban Kar, Florian Klemme, Yogesh Singh Chauhan, Hussam Amrouch:
On the Severity of Self-Heating in FDSOI at Cryogenic Temperatures: In-depth Analysis from Transistors to Full Processor. 1-6 - Y. L. Yang, P. C. Tsao, C. W. Lin, H. Q. Chen, B. J. Huang, Hank Hsieh, Kerwin Chen, Ross Lee, Khim Koh, Y. J. Ting, B. C. Hsu, Y. S. Huang, Citi Lai, M. Z. Lee, T. H. Lee:
Vmin Shift Prediction Using Machine Learning-Based Methodology for Automotive Products. 3 - Shivendra Singh Parihar, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch:
Impact of Self-Heating in 5nm FinFETs at Cryogenic Temperatures for Reliable Quantum Computing: Device-Circuit Interaction. 1-7 - Pietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco:
Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. 1-6 - Rashmi Saikia, Himanshu Rai, Souvik Mahapatra:
Modeling of Post-Cycling Retention Bake in 3-D CTF TLC NAND Arrays. 1-6 - Tianhao Zhang, Norman Chang:
Design for Reliability (DFR) Aware EDA Solution for Product Reliability (Invited). 1-6 - Peter Moens, F. Geenen, M. Avramenko, G. Gomez-Garcia, Kevin Matocha:
On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs. 1-7 - Dishant Sangani, Ben Kaczer, Pieter Weckx, Philippe J. Roussel, Subrat Mishra, Erik Jan Marinissen, Georges G. E. Gielen:
Possible Origins, Identification, and Screening of Silent Data Corruption in Data Centers. 1-7 - Jenna B. Kronenberg, Yoni Xiong, Nicholas J. Pieper, Dennis R. Ball, Bharat L. Bhuva:
Single-Event Performance of Flip Flop Designs at the 5-nm Bulk FinFET Node at Near-Threshold Supply Voltages. 1-5 - L. Pistolesi, Artem Glukhov, Amadeo de Gracia Herranz, M. Lopez-Vallejo, Marcella Carissimi, Marco Pasotti, Pier Luigi Rolandi, Andrea Redaelli, I. Muñoz-Martín, S. Bianchi, Andrea Bonfanti, Daniele Ielmini:
Drift Compensation in Multilevel PCM for in-Memory Computing Accelerators. 1-4 - S. Musibau, N. Poumpouridis, Artemisia Tsiara, J. Franco, Mathias Berciano, Joris Van Campenhout, I. De Wout, K. Crees:
Degradation and Recovery Kinetics Study of Vertical and Lateral Ge-on-Si Photodetectors. 1-10 - Omkar Phadke, Halid Mulaosmanovic, Stefan Dünkel, Sven Beyer, Shimeng Yu:
Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out. 1-5 - M. Greatti, J. L. Mazzola, C. Monzio Compagnoni, Alessandro S. Spinelli, D. Paci, F. Speroni, V. Marano, M. Lauria, Gerardo Malavena
Investigation of the Moisture- Driven Dynamics of Time- Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolators. 1-7 - Kozo Takeuchi
An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs. 1-4 - H. C. Chang, P. J. Liao, S. H. Chen, Y. K. Chang, C. P. Li, W. C. Liao, M. H. Hsieh, H. W. Yang, J. H. Lee, C. M. Huang, Jun He:
Enhancing EM Reliability and Lifetime Modeling: A Multi-Link Structure Approach. 1-4 - Asif A. Shah, Rupali Verma, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, Jeevcsh Kumar, Anand Kumar Rai, Sumana Chattaraj, Mayank Shrivastava:
Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs. 1-4 - Yinghong Zhao, Hokyung Park, Ki-Don Lee, Liangshan Chen, Manisha Sharma, Sugento Huandra, Hanson Mao, Brian Filemyr Smith, Wei Xia, Joonah Yoon, Junehwan Kim, Myungsoo Yeo, Shin-Young Chung, Ju Kwang Kim:
Impacts of Post-Cu CMP Queue Time on Reliability. 1-5 - Gergana Drandova, Jose Jimenez, Jesse Wisch, Sourabh Khandelwal
Fast, Scalable, and Highly Accurate Thermal Modeling for Use in GaN/GaAs RF Circuit Modeling Platforms. 1-4 - Md. Asaduz Zaman Mamun, Nathan J. Conrad, Saeed Mohammadi, Muhammad Ashraful Alam:
Validating Supply Chain against Recycled COTS ICs using I/O Pad Transistors: A Zero-Area Intrinsic Odometer Approach. 1-8 - Hyuk Je Kwo, Hyung Suk Yu, Bongman Choi, Jinseon Yeom, Hyungsuk Kim, Tae-Min Park, Jaeyong Jeong, Eun-Kyoung Kim:
A Valid Experimental Design of the Lifetime Prediction for NAND Cell Oxide. 1-6 - Yong Hyeon Yi, Chris H. Kim, Armen Kteyan, Alexander Volkov, Stéphane Moreau, Valeriy Sukharev:
Electromigration Test Chip Experiments from Realistic Power Grid Structures: Failure Trend Comparison and Statistical Analysis. 1-6 - Taras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar:
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. 7 - Da Wang
Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification. 9 - Yu Xiao, Chenyang Zhang, Da Wang, Yongkang Xue, Pengpeng Ren, Zhigang Ji:
A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation. 75 - Javier Diaz-Fortuny
Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. 4 - Yoni Xiong, Nicholas J. Pieper, Jenna B. Kronenberg, Dennis R. Ball, Megan Casey, Bharat L. Bhuva:
Multiple Bit Upsets in Register Circuits at the 5-nm Bulk FinFET Node. 46 - Junru Qu, Dong Liu, Bing Chen, Ying Sun, Xinze Li, Chengji Jin, Jiajia Chen, Haoji Qian, Rongzong Shen, Xiao Yu, Dawei Gao, Ran Cheng, Genquan Han:
Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET. 70 - Hwanbeom Cho, Kyeongeun Kim, Minkyoung Kim, Chinam An, Noeul Sim, Youngseok Oh, Minseung Kim, Gyumyeong Kim, Jinkyung Park, Jin Jeon, Minjin Kim, Eunae Heo, Youngju Lim, Moonhyun Lee, Sanghee Lee, Minji Kim:
The Enhancement Mechanisms of SiOx Hardness via Manipulation of Oxygen Content. 10 - Philipp Steinmann, Daniel J. Lichtenwalner, Shane Stein, Jae-Hyung Park, Suman Das
Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method. 58 - Rina Takashima, Takeo Koike, Shogo Itai, Hideyuki Sugiyama, Young Min Lee, Masaru Toko, Soichiro Ono, Daisuke Watanabe, Soichi Oikawa, Katsuhiko Koi, Hiroyuki Kanaya, Masahiko Nakayama, Kohji Nakamura:
Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAM. 10 - Ping-Yi Hsieh, Ameni Ben Driss, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Ingrid De Wolf:
Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors. 2 - En-xia Zhang
Charge Trapping in Irradiated 3D Devices and ICs (Invited). 10 - B. D. Rummel, C. E. Glaser, R. T. Gurule, M. Groves, A. T. Binder, R. Floyd, L. Yates, K. J. Reilly, R. J. Kaplar:
Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing. 52 - A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier:
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. 4 - Yifei Huang, Qimeng Jiang, Sen Huang, Xinyue Dai, Xinhua Wang, Xinyu Liu:
The First Investigation of Switching Lifetime on Parallel-Connected GaN Power Devices. 2 - Dibyendu Chatterjee, Uma Sharma, Hiroshi Murai, Tomohiko Kudo, Raghu Singanamalla, Haitao Liu:
Body Bias Impact on ION Degradation in SiGe-Channel pMOS without Si-Cap for DRAM Periphery. 22 - Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. 3 - Taeyoung Kim, Suhwan Lim, Ilho Myeong, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Ilyoung Yoon, Chaeho Kim, Kwanzsoo Kim, Kwanzmin Park, Bong Jin Kuh, Jinseong Heo, Wanki Kim, Daewon Ha, Jaihyuk Song:
Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET. 6 - Balaji Narasimham, A-R. Montoya, C. Paone, T. Riehle, Mike Smith, Liming Tsau, Dennis R. Ball, Bharat L. Bhuva:
Scaling Trends and Bias Dependence of SRAM SER from 16-nm to 3-nm FinFET. 10 - Rupali Verma, Utpreksh Patbhaje, Asif Altaf Shah, Jeevesh Kumar, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, Mayank Shrivastava:
Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs. 74 - Pei-Ci Jhang, Chi-Pin Lu, Jung-Yu Shieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Hang-Ting Lue, Pei-Ying Du, Chih-Yuan Lu:
Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of Tunneling Oxide. 24 - Leitao Liu, Jingtian Fang, Ashish Pal, Plamen Asenov, Mohit Bajaj, Bei Deng, Xi-Wei Lin, Souvik Mahapatra, Subi Kengeri, El Mehdi Bazizi:
Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology. 7 - Nitish Kumar, Sankatali Venkateswarlu, Yukai Chen, Moritz Brunion, Subrat Mishra, Ankur Gupta, Pushpapraj Singh, Francky Catthoor, James Myers, Julien Ryckaert, Dwaipayan Biswas:
Thermal Analysis of High-Performance Server SoCs from FinFET to Nanosheet Technologies. 8 - Sunil Rathore, Navjeet Bagga, S. Dasgupta:
Self-Heating and Process-Induced Threshold Voltage Aware Reliability and Aging Analysis of Forksheet FET. 65 - Huimei Zhou, Miaomiao Wang, Ernest Y. Wu:
Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling. 2 - Ian Hill
A Novel Induced Offset Voltage Sensor for Separable Wear-Out Mechanism Characterization in a 12nm FinFET Process. 8 - Jeremy Dunworth, Jefy Alex Jayamon, Peter M. Asbeck, Gabriel M. Rebeiz:
Reliability Considerations for 5G and 6G Phased Arrays. 5 - A. Cavaliere, Carlo De Santi
Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs. 17 - Sunhang Lee, Nam-Hyun Lee, G.-J. Kim, J. Ahn, Ik-Hwan Kim, S. Ha, S. Rhee, GH Bae, KW Lee, YS Lee, SB. Ko, S. Pae:
Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology. 69 - Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. 5 - Pradeep Lall, Ved Soni:
Cell Lifetime Degradation Model Development for Li-Ion Coin Cells considering Calendar Aging and Post-Knee Degradation (Invited). 5 - Soumitra Joy, Kaustubh Joshi, Ahmad Zubair, Samuel Bader, Jason Peck, Michael Beumer, Pratik Koirala, Marko Radosavljevic, Heli Vora, Inanc Meric, Han Wui Then:
PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors. 6 - Zixuan Sun, Yongkang Xue, Haoran Lu, Pengpeng Ren, Zirui Wang, Zhigang Ji, Runsheng Wang, Ru Huang:
Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs. 72 - Andrea Palmieri, Mahdi Tavakoli, Chi Ching, Wenkai Zheng, Shi You, Xiaodong Zhang, Davide Cornigli, Michael Haverty, Navneet Singh, Luca Larcher, Monika Jamieson, Ajay Bhatnagar, Alexander Jansen, Max Gage, Jianshe Tang, Sameer Deshpande, Brian Brown, Arun Srivatsa, Mehul Naik, Bo Xie, Jerry Gelatos, Joung Joo Lee, Xianmin Tang, Gaurav Thareja, Milan Pesic:
Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOL. 10 - Bastien Beltrando, Bruno Coppolelli, Jung-Bae Kim, Yang Ho Bae, Stephen Weeks, Lisa Enman, Ghazal Saheli, Davide Cornigli, Stuart Brinkley, Mark Saly, Luca Larcher, Dong Kil Yim, Milan Pesic:
Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors. 4 - Y. S. Lin, Cheng Hsun Yang, C. H. Wang, K. P. Sou, Cheng Hong Yang, M. C. Shih, W. S. Hung, W. H. Chuang, F. M. Ciou, P. C. Chiu, C. C. Hsu, C. F. Chen, D. M. Kuo:
HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications. 2 - Ilho Myeong, Suhwan Lim, Taeyoung Kim, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Munkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Ilyounz Yoon, Jaeho Kim, Kwangsoo Kim, Kwangmin Park, Bong Jin Kuh, Wanki Kim, Daewon Ha, Sujin Ahn, Jaihyuk Song, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Jinseong Heo:
A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND. 9 - Robert Frickey, Joseph Doller, Robert Norton, Roman Sancho, Rakhshanda Sayyad, Dmitry Ustinov, Raymond Wang, Harvey Xu:
Comparing the Reliability of Solid-State Drives Based on TLC and QLC NAND Flash Memories (Invited). 3 - Mondol Anik Kumar, Biswajit Ray:
Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure. 25 - Alan Y. Otero-Carrascal, Dora A. Chaparro-Ortiz, Edmundo A. Gutiérrez-D., Reydezel Torres-Torres, Oscar Huerta-Gonzalez, P. Srinivasan:
Assessing Non-Conducting Off-State Induced Hard Breakdown for PD-SOI MOSFETs using an RF Measurement Technique. 53 - Dongjin Lee, Yunjo Lee, Soyeong Na, KangOh Yun, Sungkweon Baek, Jaeduk Lee, Jaehoon Jang, Jaihyuk Song:
A Novel Quantitative Model for Combination Effects of Hydrogen and Process Heat on Peripheral Transistors in 3D-NAND Flash Memory. 68 - Moonyoung Jeong
Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor. 23 - Suman Gora, Jay Singh
Impact of Edge and Basal Plane Oxidation on the Stability of Oxygen Doped MoS2- RRAM. 5 - Mustafa Shqair
A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited). 7 - Cheng-Shan Chen, Chun-Yen Yang, Shao-Jui Yang, Deng-Yi Wang, Yaw-Wen Kuo, Wei-Han Hsiao, Hsin-Hung Chou, Chia-Feng Lin, Yung-Hui Li, Yewchung Sermon Wu, Hsiang Chen, Jung Han:
Machine Vision Observation, Artificial Intelligence Pattern Recognition, Protective Circuit Design, Characterization of Multiple Materials, and Nano-Structural Analysis for Investigating InGaN Green Light Emitting Diode Degradation in a Salty Water Vapor Environment. 10 - J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi:
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. 36
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