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Ruonan Han 0001
Person information
- affiliation: Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, MA, USA
- affiliation (PhD 2014): Cornell University, Department of Electrical and Computer Engineering, Ithaca, NY, USA
- affiliation (former): University of Florida, Gainesville, FL, USA
Other persons with the same name
- Ruonan Han 0002 — Ministry of Education, Key Laboratory of Universal Wireless Communication, Beijing, China
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2020 – today
- 2024
- [j27]Eunseok Lee
, Muhammad Ibrahim Wasiq Khan
A 1.54-mm2, 264-GHz Wake-Up Receiver With Integrated Cryptographic Authentication for Ultra-Miniaturized Platforms. IEEE J. Solid State Circuits 59(3): 653-667 (2024) - [j26]Xibi Chen
A 265-GHz CMOS Reflectarray With 98×98 Elements for 1°-Wide Beam Forming and High-Angular-Resolution Radar Imaging. IEEE J. Solid State Circuits 59(11): 3655-3669 (2024) - [c28]Ruonan Han:
The Pursuit of Practical Applications of THz CMOS Chips (Invited). CICC 2024: 1-7 - [c27]Jinchen Wang, Isaac B. Harris, Xibi Chen, Dirk R. Englund, Ruonan Han:
A CMOS-Integrated Color Center Pulse-Sequence Control and Detection System. CICC 2024: 1-2 - [c26]Eunseok Lee, Xibi Chen, Maitreyi Ashok, Jae-Yeon Won, Anantha P. Chandrakasan, Ruonan Han:
12.5 A Packageless Anti-Tampering Tag Utilizing Unclonable Sub-THz Wave Scattering at the Chip-Item Interface. ISSCC 2024: 226-228 - 2023
- [c25]Eunseok Lee, Muhammad Ibrahim Wasiq Khan, Xibi Chen, Utsav Banerjee, Nathan M. Monroe, Rabia Tugce Yazicigil, Ruonan Han, Anantha P. Chandrakasan:
A 1.54mm2 Wake-Up Receiver Based on THz Carrier Wave and Integrated Cryptographic Authentication. CICC 2023: 1-2 - [c24]Jinchen Wang, Mohamed I. Ibrahim
THz Cryo-CMOS Backscatter Transceiver: A Contactless 4 Kelvin-300 Kelvin Data Interface. ISSCC 2023: 504-505 - 2022
- [j25]Xingcun Li
A High-Efficiency 142-182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique. IEEE J. Solid State Circuits 57(2): 371-384 (2022) - [j24]Muhammad Ibrahim Wasiq Khan
A 0.31-THz Orbital-Angular-Momentum (OAM) Wave Transceiver in CMOS With Bits-to-OAM Mode Mapping. IEEE J. Solid State Circuits 57(5): 1344-1357 (2022) - [j23]Xingcun Li
A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier With a Slotline-Based Power Combiner. IEEE J. Solid State Circuits 57(12): 3567-3581 (2022) - [j22]Xibi Chen
A 140-GHz FMCW TX/RX-Antenna-Sharing Transceiver With Low-Inherent-Loss Duplexing and Adaptive Self-Interference Cancellation. IEEE J. Solid State Circuits 57(12): 3631-3645 (2022) - [c23]Nathan M. Monroe, Georgios C. Doqiamis, Robert Stingel, Preston Myers, Xibi Chen, Ruonan Han:
Electronic THz Pencil Beam Forming and 2D Steering for High Angular-Resolution Operation: A 98×98-Unit 265GHz CMOS Reflectarray with In-Unit Digital Beam Shaping and Squint Correction. ISSCC 2022: 1-3 - [c22]Xibi Chen, Muhammad Ibrahim Wasiq Khan, Xiang Yi, Xingcun Li
A 140GHz Transceiver with Integrated Antenna, Inherent-Low-Loss Duplexing and Adaptive Self-Interference Cancellation for FMCW Monostatic Radar. ISSCC 2022: 80-82 - [c21]Xingcun Li
A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier With Slotline-Based Power-Combining Technique Achieving >22dBm Saturated Output Power and >10% Power Back-off Efficiency. ISSCC 2022: 316-318 - [c20]Jongchan Woo, Muhammad Ibrahim Wasiq Khan, Mohamed I. Ibrahim, Ruonan Han, Anantha P. Chandrakasan, Rabia Tugce Yazicigil:
Physical-Layer Security for THz Communications via Orbital Angular Momentum Waves. SiPS 2022: 1-6 - 2021
- [j21]Xiang Yi
A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture. IEEE J. Solid State Circuits 56(2): 327-339 (2021) - [j20]Muhammad Ibrahim Wasiq Khan
CMOS THz-ID: A 1.6-mm² Package-Less Identification Tag Using Asymmetric Cryptography and 260-GHz Far-Field Backscatter Communication. IEEE J. Solid State Circuits 56(2): 340-354 (2021) - [j19]Cheng Wang
A Terahertz Molecular Clock on CMOS Using High-Harmonic-Order Interrogation of Rotational Transition for Medium-/Long-Term Stability Enhancement. IEEE J. Solid State Circuits 56(2): 566-580 (2021) - [j18]Mohamed I. Ibrahim
High-Scalability CMOS Quantum Magnetometer With Spin-State Excitation and Detection of Diamond Color Centers. IEEE J. Solid State Circuits 56(3): 1001-1014 (2021) - [j17]Xiang Yi
Realization of In-Band Full-Duplex Operation at 300 and 4.2 K Using Bilateral Single-Sideband Frequency Conversion. IEEE J. Solid State Circuits 56(5): 1387-1397 (2021) - [j16]Zhi Hu
Erratum to "High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure". IEEE J. Solid State Circuits 56(10): 3202 (2021) - [j15]Xiang Yi
Emerging Terahertz Integrated Systems in Silicon. IEEE Trans. Circuits Syst. I Regul. Pap. 68(9): 3537-3550 (2021) - [c19]Jack W. Holloway, Georgios C. Dogiamis
A 105Gb/s Dielectric-Waveguide Link in 130nm BiCMOS Using Channelized 220-to-335GHz Signal and Integrated Waveguide Coupler. ISSCC 2021: 196-198 - 2020
- [c18]Xiang Yi, Cheng Wang, Muting Lu, Jinchen Wang, Jesús Grajal, Ruonan Han:
4.8 A Terahertz FMCW Comb Radar in 65nm CMOS with 100GHz Bandwidth. ISSCC 2020: 90-92 - [c17]Cheng Wang, Xiang Yi, Mina Kim, Ruonan Han:
29.5 Sub-THz CMOS Molecular Clock with 43ppt Long-Term Stability Using High-Order Rotational Transition Probing and Slot-Array Couplers. ISSCC 2020: 448-450 - [c16]Mohamed I. Ibrahim
29.8 THzID: A 1.6mm2 Package-Less Cryptographic Identification Tag with Backscattering and Beam-Steering at 260GHz. ISSCC 2020: 454-456
2010 – 2019
- 2019
- [j14]Kenneth K. O, Wooyeol Choi
Opening Terahertz for Everyday Applications. IEEE Commun. Mag. 57(8): 70-76 (2019) - [j13]Cheng Wang
Chip-Scale Molecular Clock. IEEE J. Solid State Circuits 54(4): 914-926 (2019) - [j12]Zhi Hu
A 32-Unit 240-GHz Heterodyne Receiver Array in 65-nm CMOS With Array-Wide Phase Locking. IEEE J. Solid State Circuits 54(5): 1216-1227 (2019) - [j11]Massimo Alioto, Magdy S. Abadir, Tughrul Arslan, Chirn Chye Boon, Andreas Burg
Editorial TVLSI Positioning - Continuing and Accelerating an Upward Trajectory. IEEE Trans. Very Large Scale Integr. Syst. 27(2): 253-280 (2019) - [c15]Mohamed I. Ibrahim
A Scalable Quantum Magnetometer in 65nm CMOS with Vector-Field Detection Capability. ISSCC 2019: 458-461 - 2018
- [j10]Zhi Hu
High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure. IEEE J. Solid State Circuits 53(5): 1313-1327 (2018) - [j9]Cheng Wang, Bradford Perkins, Zihan Wang, Ruonan Han:
Molecular Detection for Unconcentrated Gas With ppm Sensitivity Using 220-to-320-GHz Dual-Frequency-Comb Spectrometer in CMOS. IEEE Trans. Biomed. Circuits Syst. 12(3): 709-721 (2018) - [c14]Qian Zhong, Wooyeol Choi
CMOS terahertz receivers. CICC 2018: 1-8 - [c13]Cheng Wang, Xiang Yi, Mina Kim, Yaqing Zhang, Ruonan Han:
A CMOS Molecular Clock Probing 231.061-GHz Rotational Line of OCS with Sub-PPB Long-Term Stability and 66-MW DC Power. VLSI Circuits 2018: 113-114 - [c12]Mohamed I. Ibrahim
Room-Temperature Quantum Sensing in CMOS: On-Chip Detection of Electronic Spin States in Diamond Color Centers for Magnetometry. VLSI Circuits 2018: 249-250 - 2017
- [j8]Cheng Wang
Dual-Terahertz-Comb Spectrometer on CMOS for Rapid, Wide-Range Gas Detection With Absolute Specificity. IEEE J. Solid State Circuits 52(12): 3361-3372 (2017) - [c11]Cheng Wang, Ruonan Han:
17.6 Rapid and energy-efficient molecular sensing using dual mm-Wave combs in 65nm CMOS: A 220-to-320GHz spectrometer with 5.2mW radiated power and 14.6-to-19.5dB noise figure. ISSCC 2017: 302-303 - [c10]Zhi Hu, Cheng Wang, Ruonan Han:
Energy-efficient terahertz electronics using multi-functional electromagnetism and high-parallelism architecture. MWSCAS 2017: 1129-1132 - 2016
- [j7]Chen Jiang
A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS. IEEE J. Solid State Circuits 51(11): 2596-2609 (2016) - [c9]Chen Jiang, Ali Mostajeran
25.5 A 320GHz subharmonic-mixing coherent imager in 0.13µm SiGe BiCMOS. ISSCC 2016: 432-434 - 2015
- [j6]Ruonan Han, Chen Jiang, Ali Mostajeran
A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop. IEEE J. Solid State Circuits 50(12): 2935-2947 (2015) - [c8]Ruonan Han, Chen Jiang, Ali Mostajeran
25.5 A 320GHz phase-locked transmitter with 3.3mW radiated power and 22.5dBm EIRP for heterodyne THz imaging systems. ISSCC 2015: 1-3 - 2013
- [j5]Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Hisashi Shichijo, Ehsan Afshari, Kenneth K. O:
Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel. IEEE J. Solid State Circuits 48(10): 2296-2308 (2013) - [j4]Ruonan Han, Ehsan Afshari:
A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy. IEEE J. Solid State Circuits 48(12): 3090-3104 (2013) - [c7]Ruonan Han, Ehsan Afshari:
A 260GHz broadband source with 1.1mW continuous-wave radiated power and EIRP of 15.7dBm in 65nm CMOS. ISSCC 2013: 138-139 - [c6]Yaming Zhang, Ruonan Han, Youngwan Kim, Dae Yeon Kim, Hisashi Shichijo, Swaminathan Sankaran, Chuying Mao, Eunyoung Seok, Dongha Shim, Kenneth K. O:
Schottky diodes in CMOS for terahertz circuits and systems. RWS 2013: 43-45 - 2012
- [c5]Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Hisashi Shichijo, Kenneth K. O:
Terahertz image sensors using CMOS Schottky barrier diodes. ISOCC 2012: 254-257 - [c4]Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Hisashi Shichijo, Ehsan Afshari, Kenneth K. O:
280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS. ISSCC 2012: 254-256 - 2011
- [j3]Ruonan Han, Yaming Zhang, Dominique Coquillat, Hadley Videlier, Wojciech Knap
A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS. IEEE J. Solid State Circuits 46(11): 2602-2612 (2011) - 2010
- [j2]Hsin-Ta Wu, Ruonan Han, Wuttichai Lerdsitsomboon, Changhua Cao, Kenneth K. O:
Multi-Level Amplitude Modulation of a 16.8-GHz Class-E Power Amplifier With Negative Resistance Enhanced Power Gain for 400-Mbps Data Transmission. IEEE J. Solid State Circuits 45(5): 1072-1079 (2010) - [j1]Eunyoung Seok, Dongha Shim, Chuying Mao, Ruonan Han, Swaminathan Sankaran, Changhua Cao, Wojciech Knap
Progress and Challenges Towards Terahertz CMOS Integrated Circuits. IEEE J. Solid State Circuits 45(8): 1554-1564 (2010) - [c3]Ruonan Han, Yaming Zhang, Dominique Coquillat, Julie Hoy, Hadley Videlier, Wojciech Knap
280-GHz schottky diode detector in 130-nm digital CMOS. CICC 2010: 1-4
2000 – 2009
- 2009
- [c2]Dongha Shim, Chuying Mao, Ruonan Han, Swaminathan Sankaran, Eunyoung Seok, Changhua Cao, Wojciech Knap
Paths to terahertz CMOS integrated circuits. CICC 2009: 657-664 - [c1]Swaminathan Sankaran, Chuying Mao, Eunyoung Seok, Dongha Shim, Changhua Cao, Ruonan Han, Daniel J. Arenas, David B. Tanner, Stephen Hill, Chih-Ming Hung
Towards terahertz operation of CMOS. ISSCC 2009: 202-203
Coauthor Index
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