DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC635; BC637; BC639
NPN medium power transistors
Product specification 1999 Apr 23
Supersedes data of 1997 Mar 12
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
FEATURES PINNING
• High current (max. 1 A) PIN DESCRIPTION
• Low voltage (max. 80 V). 1 base
2 collector
APPLICATIONS 3 emitter
• Driver stages of audio/video amplifiers.
DESCRIPTION
handbook, halfpage1 2
2
NPN transistor in a TO-92; SOT54 plastic package. 3
PNP complements: BC636, BC638 and BC640. 1
3
MAM259
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC635 − 45 V
BC637 − 60 V
BC639 − 100 V
VCEO collector-emitter voltage open base
BC635 − 45 V
BC637 − 60 V
BC639 − 80 V
VEBO emitter-base voltage open collector − 5 V
IC collector current (DC) − 1 A
ICM peak collector current − 1.5 A
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 0.83 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 23 2
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 150 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 30 V − 100 nA
IE = 0; VCB = 30 V; Tj = 150 °C − 10 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V − 100 nA
hFE DC current gain VCE = 2 V; see Fig.2
IC = 5 mA 40 −
IC = 150 mA 63 250
IC = 500 mA 25 −
DC current gain IC = 150 mA; VCE = 2 V; see Fig.2
BC639-10 63 160
BC635-16; BC637-16; BC639-16 100 250
VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA − 500 mV
VBE base-emitter voltage IC = 500 mA; VCE = 2 V − 1 V
fT transition frequency IC = 50 mA; VCE = 5 V; f = 100 MHz 100 − MHz
h FE1 DC current gain ratio of the IC = 150 mA; VCE = 2 V − 1.6
----------- complementary pairs
h FE2
1999 Apr 23 3
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
MBH729
160
handbook, full pagewidth
VCE = 2 V
hFE
120
80
40
0
10−1 1 10 102 IC (mA) 103
Fig.2 DC current gain; typIcal values.
1999 Apr 23 4
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
d A L
1
e1
2
D e
b1
L1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A b b1 c D d E e e1 L L1(1)
5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5
mm 2.54 1.27 2.5
5.0 0.40 0.56 0.40 4.4 1.4 3.6 12.7
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
SOT54 TO-92 SC-43 97-02-28
1999 Apr 23 5
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 23 6
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
NOTES
1999 Apr 23 7
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 23 Document order number: 9397 750 05812
