PD-97014C
HiRel TM INT-A-Pak 2, PLASTIC G300HHCK12P2
HALF-BRIDGE IGBT MODULE
Product Summary
Part Number VCE IC VCE(SAT)
G300HHCK12P2 1200V 300A 2.2
HiRelTM INT-A-Pak 2
The HiRelTM INT-A-Pak series are isolated near Features:
hermetic power modules which combine the latest n Rugged, Lightweight near Hermetic Package
IGBT and Soft Recovery Rectifier Technology. The with Integrated Power Terminal Cap
module uses both high-speed and low Vce(sat) n Gen IV IGBT Technology
IGBT's packaged for ultra low thermal resistance n Soft Recovery Rectifiers
junction to case. The G300HHCK12P2 power n AlSiC Baseplate and AIN Substrate
module consists of six IGBT's and six FRED's in a n Ultra-Low Thermal Resistance
Phase- Leg or Half-Bridge configuration. n Zener Gate Protection
n Very Low Conduction and Switching Loss
n -55°C to +125°C Operating Temperature
n Screening to meet the intent of
MIL-PRF-38534 Class H
n Short Circuit Capability
n 2.0 Ohms Series Gate Resistor
n High Altitude Operation, 85,000 Feet Above
Sea Level at Rated Voltage
Absolute Maximum Ratings @ Tj=25°C (unless otherwise specified)
Parameter Symbol Value Units
Collector-to-Emitter Voltage VCES 1200
V
Gate-to-Emitter Voltage VGE ±20
Continuous Collector Current @ Tc = 25°C 450
IC A
Continuous Collector Current @ Tc = 100°C 300
Isolation Voltage VISOL 2500 VRMS
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G300HHCK12P2
Electrical Characteristics @ Tj = 25°C (unless otherwise specified)
Parameter Symbol Test Conditions Min. Typ. Max. Units
Off Characteristics
Collector Emitter Breakdown Voltage VCES VGE = 0V 1200 - - V
Zero Gate Voltage Collector Current ICES VGE =0V, VCE = 1200V - - 1.0 mA
Gate Emitter Leakage Current IGES VGE = ±15V, VCE = 0V - - 10 µA
On Characteristics
Gate Threshold Voltage VGE(TH) VCE = VGE, IC = 1.0mA 3.5 - 7.5
V
Collector Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 300A - 2.2 2.7
Dynamic Characteristics
Total Gate Charge Qg VCE = 600V, IC = 300A, VGE = 15V - 2300 - nC
Input Capacitance CIES - 44 -
Output Capacitance COES VGE = 0V, VCE = 25V, f = 1.0MHz - 3.0 - nF
Reverse Transfer Capacitance CRES - 0.3 -
Switching Inductive Load Characteristics
Turn-On Delay Time td(on) - 830 1000
ns
Rise Time tr 300 400
Turn-On Losses Eon VCC = 600V, IC = 300A, VGE =15V - 100 - mJ
Turn-Off Delay Time td(off) RG(on) = 20Ω, RG(off) =10Ω, L=100µH 1900 2200
ns
Fall Time tf - 300 400
Turn-Off Losses Eoff - 55 - mJ
Diode Characteristics
Forward Voltage VF IF = 300A - 1.9 2.2 V
Reverse Recovery Charge Qrr - 15 20 µC
Peak Reverse Recovery Current Irr VR =600V, IC =300A, di/dt =-800A/µs - 90 - A
Reverse Recovery Time trr - 500 800 ns
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G300HHCK12P2
Electrical Characteristics @ Tj = 125°C (unless otherwise specified)
Parameter Symbol Test Conditions Min. Typ. Max. Units
Off Characteristics
Collector Emitter Breakdown Voltage VCES VGE = 0V 1200 - - V
Zero Gate Voltage Collector Current ICES VGE =0V, VCE = 1200V - - 3.0 mA
Gate Emitter Leakage Current IGES VGE = ±15V, VCE = 0V - - 10 µA
On Characteristics
Gate Threshold Voltage VGE(TH) VCE = VGE, IC = 1.0mA 3.5 - 7.5
V
Collector Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 300A - 2.2 2.7
Diode Characteristics
Forward Voltage VF IF = 300A - 1.9 2.2 V
Thermal-Mechanical Specifications
Parameter Symbol Min Max Units
IGBT Thermal Resistance, Junction to Case, per Switch - 0.06
RthJC °C/W
Diode Thermal Resistance, Junction to Case, per Switch - 0.10
Operating Junction Temperature Range TJ -55 150
°C
Storage Temperature Range TSTG -55 125
Screw Torque - Mounting
T - 26 in-lbs
Screw Torque - Terminals
Module Weight - 270 g
Module Screening
Test or Inspection MIL-STD-883 Comments
Method Condition
Internal Visual 2017
Temperature Cycle 1010 B 10 Cycles, -55°C to +125°C
Mechanical Shock 2002 B 1500G, 0.5ms, 5 Times (Y1 direction only)
Burn-in 1015 A 160 Hrs @ +125°C
Final Electrical Test Group A, -55°C, +25°C, +125°C
External Visual 2009
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G300HHCK12P2
Schematic
500
400
Maximum DC Collector Current (A)
300
200
100
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig 1: Maximum Collector Current Vs Case Temperature
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G300HHCK12P2
90% Vge
+Vge
Vce
90% Ic
10% Vce
Ic Ic
5% Ic
td(off) tf
t1+5µS
Eoff =
∫ Vce ic dt
Vcet1Ic dt
t1 t2
Fig. 2 - Test Circuit for Measurement of Eon, Fig. 3 - Test Waveforms for Circuit of Fig. 2,
Eoff, trr, Qrr, Irr, td(on), tr, td(off), tf Defining Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
Ic
trr
Qrr =
∫tx
Ic dtdt
id
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
Vce
AND CURRENT Vpk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
td(on) tr
∫
t2
VceieIcdt dt
Eon = Vce
∫
t4
t1 Erec = VdVcidIcdt dt
t3
t1 t2 DIODE REVERSE
RECOVERY ENERGY
t3 t4
Fig. 3 - Test Waveforms for Circuit of Fig. 2, Fig. 4 - Test Waveforms for Circuit of Fig. 2,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr
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G300HHCK12P2
Case Outline and Dimensions - HiRelTM INT-A-Pak 2
Notes: 1) All dimensions are in inches
2) Unless otherwise specified,
Tolerances .XX = ±0.01, .XXX = ±0.005
3) Dimension applies to Signal Terminals only.
4) Dimension applies to Power Terminals only.
Part Numbering Nomenclature
G 300 HH C K 12 P2 H
Screening Level
P = Unscreened, 25°C Electrical Test
IGBT Module - Hirel ( Not intended for Qualification)
H = Screened per MIL-PRF-38534
Current Capability
300 = 300 Amps Package Type
P2 = HiRelTM INT-A-Pak 2,
Circuit Configuration 2.5" X 4.0" X 1.0"
HH = Half Bridge Voltage
12 = 1200V
Generation IGBT Speed / SC Capability
IGBT / FWD Configuration K = Fast, SC Capable
C = GEN 5 (NPT) / GEN 3
WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, Tel: (310) 252-7105
IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776
Visit us at www.irf.com for Sales contact information
Data and specifications subject to change without notice. 03/2015
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