IRF630

IRF630FP
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP
Mesh overlay™ II Power MOSFET

General features
Type VDSS RDS(on) ID
IRF630 200V <0.40Ω 9A
IRF630FP 200V <0.40Ω 9A

■ Extremely high dv/dt capability 3 3

2 2
■ Very low intrinsic capacitances 1 1

■ Gate charge minimized TO-220 TO-220FP

Description
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with Internal schematic diagram
standard parts from various sources.

Applications
■ Switching application

Order codes
Part number Marking Package Packaging
IRF630 IRF630 TO-220 Tube
IRF630FP IRF630FP TO-220FP Tube

August 2006 Rev 9 1/14

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 Contents IRF630 - IRF630FP

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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 IRF630 - IRF630FP Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220 TO-220FP

VDS Drain-source voltage (VGS = 0) 200 V

VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V
VGS Gate-source voltage ± 20 V
ID Drain current (continuous) at TC = 25°C 9 9(1) A
ID Drain current (continuous) at TC=100°C 5.7 5.7(1) A
(2)
IDM Drain current (pulsed) 36 36(1) A
PTOT Total dissipation at TC = 25°C 75 30 W
Derating factor 0.6 0.24 W/°C
dv/dt (3)
Peak diode recovery voltage slope 5 V/ns
VISO Insulation winthstand voltage (DC) -- 2000 V
TJ Operating junction temperature -65 to 150
°C
Tstg Storage temperature 150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤9A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Table 2. Thermal data

Value
Symbol Parameter Unit
TO-220 TO-220FP

Rthj-case Thermal resistance junction-case Max 1.67 4.17 °C/W

Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W
Rthc-sink Thermal resistance case-sink typ 0.5 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAR 9 A
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS 160 mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)

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 Electrical characteristics IRF630 - IRF630FP

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 250 µA, VGS= 0 200 V
voltage

Zero gate voltage drain VDS = Max rating, 1 µA

IDSS
current (VGS = 0) VDS = Max rating @125°C 50 µA

Gate body leakage current

IGSS VGS = ±20V ± 100 nA
(VDS = 0)

VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V

Static drain-source on
RDS(on) VGS= 10V, ID= 4.5A 0.35 0.40 Ω
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

VDS > ID(on) x RDS(on)max,

gfs (1) Forward transconductance 3 4 S
ID = 4.5A
Input capacitance
Ciss 540 700 pF
Output capacitance
Coss VDS =25V, f=1 MHz, VGS=0 90 120 pF
Reverse transfer
Crss 35 50 pF
capacitance
VDD = 100V, ID = 4.5A,
td(on) Turn-on Delay Time 10 14 ns
RG = 4.7Ω, VGS = 10V
tr Rise Time 15 20 ns
(see Figure 14)
Qg Total gate charge 31 45 nC
VDD=160V, ID = 9A
Qgs Gate-source charge 7.5 nC
VGS =10V
Qgd Gate-drain charge 9 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%

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 IRF630 - IRF630FP Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current 9 A

ISDM(1) Source-drain current (pulsed) 36 A

VSD(2) Forward on voltage ISD=9A, VGS=0 1.5 V

ISD=9A,
trr Reverse recovery time 170 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 0.95 µC
VDD=50V, Tj=150°C
IRRM Reverse recovery current 11 A
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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 Electrical characteristics IRF630 - IRF630FP

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

Figure 3. Safe operating area for TO-220/FP Figure 4. Thermal impedance for TO-220/FP

Figure 5. Output characterisics Figure 6. Transfer characteristics

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 IRF630 - IRF630FP Electrical characteristics

Figure 7. Transconductance Figure 8. Static drain-source on resistance

Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations

Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature temperature

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 Electrical characteristics IRF630 - IRF630FP

Figure 13. Source-drain diode forward

characteristics

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 IRF630 - IRF630FP Test circuit

3 Test circuit

Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit
resistive load

Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

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 Package mechanical data IRF630 - IRF630FP

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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 IRF630 - IRF630FP Package mechanical data

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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 Package mechanical data IRF630 - IRF630FP

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

G1

G
H

F2

1 2 3
L5
L2 L4

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 IRF630 - IRF630FP Revision history

5 Revision history

Table 7. Revision history

Date Revision Changes

09-Sep-2004 8 Complete version

03-Aug-2006 9 New template, no content change

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 IRF630 - IRF630FP

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