FJP13009 — High-Voltage Fast-Switching NPN Power Transistor

September 2014

FJP13009
High-Voltage Fast-Switching NPN Power Transistor

Features Description
• High-Voltage Capability The FJP13009 is a 700 V, 12 A NPN silicon epitaxial pla-
• High Switching Speed nar transistor. The FJP13009 is available with multiple
hFE bin classes for ease of design use. The FJP13009 is
designed for high speed switching applications which uti-
lizes the industry standard TO-220 package offering flex-
Applications ibility in design and excellent power dissipation.
• Electronic Ballast
• Switching Regulator
• Motor Control
• Switched Mode Power Supply

1 TO-220

1.Base 2.Collector 3.Emitter

Ordering Information
Part Number(1) Top Mark Package Packing Method
FJP13009TU J13009 TO-220 3L Rail
FJP13009H2TU J13009-2 TO-220 3L Rail

Notes:
1. The affix “-H2” means the hFE classification. The suffix “-TU” means the tube packing method.

© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13009 Rev. 1.2.1
 FJP13009 — High-Voltage Fast-Switching NPN Power Transistor
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 12 A
ICP Collector Current (Pulse) 24 A
IB Base Current 6 A
PD Total Device Dissipation (TC = 25°C) 100 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 to +150 °C

Note:
2. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations.

Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max Unit

VCEO(sus) Collector-Emitter Sustaining Voltage IC = 10 mA, IB = 0 400 V
IEBO Emitter Cut-Off Current VEB = 9 V, IC = 0 1 mA
hFE1 VCE = 5 V, IC = 5 A 8 40
DC Current Gain(3)
hFE2 VCE = 5 V, IC = 8 A 6 30
IC = 5 A, IB = 1 A 1.0
Collector-Emitter Saturation
VCE(sat) IC = 8 A, IB = 1.6 A 1.5 V
Voltage(3)
IC = 12 A, IB = 3 A 3.0
IC = 5 A, IB = 1 A 1.2
VBE(sat) Base-Emitter Saturation Voltage(3) V
IC = 8 A, IB = 1.6 A 1.6
Cob Output Capacitance VCB = 10 V, f = 0.1 MHz 180 pF
fT Current Gain Bandwidth Product VCE = 10 V, IC = 0.5 A 4 MHz
tON Turn-On Time VCC = 125 V, IC = 8 A, 1.1
tSTG Storage Time IB1 = - IB2 = 1.6 A, 3.0 μs
tF Fall Time RL = 15.6 Ω 0.7

Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%

hFE Classification
Classification H1 H2
hFE1 8 ~ 17 15 ~ 28

© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13009 Rev. 1.2.1 2
 FJP13009 — High-Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

100 10

VCE = 5V IC = 3 IB
hFE, DC CURRENT GAIN

1 VBE(sat)

10

0.1
VCE(sat)

1 0.01
0.1 1 10 100 0.1 1 10 100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

1000 10000

VCC=125V
IC=5IB
tR, tD [ns], TURN ON TIME
Cob[pF], CAPACITANCE

100 1000
tR

10 100 tD, VBE(off)=5V

1 10
0.1 1 10 100 1000 0.1 1 10 100

VCB[V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT

Figure 3. Collector Output Capacitance Figure 4. Turn-On Time

10000 100
VCC=125V
IC=5IB
tSTG, tF [ns], TURN OFF TIME

10
IC[A], COLLECTOR CURRENT

μs
10

10
0 μs
1m

tSTG
DC

1000 1

0.1

tF

100 0.01
0.1 1 10 100 1 10 100 1000

IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Turn-Off Time Figure 6. Forward Bias Safe Operating Area

© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13009 Rev. 1.2.1 3
 FJP13009 — High-Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics (Continued)

100 120
Vcc=50V,
IB1=1A, IB2 = -1A
100

PC[W], POWER DISSIPATION

L = 1mH
IC[A], COLLECTOR CURRENT

10

80

1 60

40

0.1

20

0.01 0
10 100 1000 10000 0 25 50 75 100 125 150 175

VCE[V], COLLECTOR-EMITTER VOLTAGE o

TC[ C], CASE TEMPERATURE

Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating

© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13009 Rev. 1.2.1 4
 FJP13009 — High-Voltage Fast-Switching NPN Power Transistor
Physical Dimensions

Figure 9. TO220, MOLDED, 3-LEAD, JEDEC VARIATION AB

© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13009 Rev. 1.2.1 5
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Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
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Rev. I71
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