NCV6357 D
NCV6357 D
• I2C Control Interface with Interrupt and Dynamic Voltage Scaling (Note: Microdot may be in either location)
Support
• Enable / VSEL Pins, Power Good / Interrupt Signaling PIN CONNECTIONS
• Thermal Protections and Temperature Management (Top View)
14− Pin 0.50 mm pitch
• Transient Load Helper: Share the Same Rail with another Rail DFN
• 3.0 × 4.0 mm / 0.5 mm Pitch DFN 14 Package
• AEC−Q100 Qualified and PPAP Capable
Typical Applications
• Snap Dragon
• Automotive POL
• Instrumentation, Clusters
• Infotainment
• ADAS System (Vision, Radar)
Thermal 10 mF
Protection
DCDC
Enable Control EN 5A
Input SW
Operating
Mode Modular 330 nH
Voltage VSEL Control Driver
Selection
2 × 22 mF
PG Output PGND
Power Good
Monitoring
FB
Output Voltage
Monitoring
SDA I2C
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13 VSEL Digital Input Output voltage / Mode Selection. The level determines which of two programmable
configurations to utilize (operating mode / output voltage). There is an internal pull down
resistor on this pin; could be left open if not used
3 PG Digital Power Good Indicator open drain output. Must be connected to the ground plane if
Output not used
1 SCL Digital Input I2C interface Clock line. There is an internal pull down resistor on this pin; could be left
open if not used
12 SDA Digital I2C interface Bi−directional Data line. There is an internal pull down resistor on this pin;
Input/Output could be left open if not used
DC TO DC CONVERTER
8, 9 PVIN Power Input Switch Supply. These pins must be decoupled to ground by at least a 10 mF ceramic
capacitor. It should be placed as close as possible to these pins. All pins must be used
with short heavy connections. Must be equal to AVIN
5, 6, 7 SW Power Switch Node. These pins supply drive power to the inductor. Typical application uses
Output 0.33 mH inductor; refer to application section for more information.
All pins must be used with short heavy connections
10, 11 PGND Power Switch Ground. This pin is the power ground and carries the high switching current.
Ground High quality ground must be provided to prevent noise spikes. To avoid high−density
current flow in a limited PCB track, a local ground plane that connects all PGND pins
together is recommended. Analog and power grounds should only be connected
together in one location with a trace
2 VOUT Analog Input Feedback Voltage input. Must be connected to the output capacitor positive terminal
with a trace, not to a plane. This is the positive input to the error amplifier
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MAXIMUM RATINGS
Rating Symbol Value Unit
Analog and power pins (Note 1):
AVIN, PVIN, SW, PG, VOUT, DC non switching VA − 0.3 to + 6.0 V
PVIN−PGND pins, transient 3 ns – 2.4 MHz −0.3 to +7.5
I2C pins: SDA, SCL VI2C − 0.3 to + 6.0 V
Digital pins : EN, VSEL
Input Voltage VDG −0.3 to VA +0.3 ≤ 6.0 V
Input Current IDG 10 mA
Human Body Model (HBM) ESD Rating (Note 2) ESD HBM 2500 V
Charged Device Model (CDM) ESD Rating (Note 2) ESD CDM 2000 V
Latch Up Current: (Note 3) ILU
Digital Pins 100 mA
All Other Pins 100
Storage Temperature Range TSTG − 65 to + 150 °C
Maximum Junction Temperature TJMAX −40 to +150 °C
Moisture Sensitivity (Note 4) MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2. This device series contains ESD protection and passes the following ratings:
Human Body Model (HBM) ±2.5 kV per JEDEC standard: JESD22*A114.
Charged Device Model (CDM) ±2.0 kV per JEDEC standard: JESD22−C101 Class IV
3. Latch up Current per JEDEC standard: JESD78 class II.
4. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
OPERATING CONDITIONS
Symbol Parameter Conditions Min Typ Max Unit
AVIN, PVIN Power Supply AVIN = PVIN 2.5 5.5 V
TJ Junction Temperature Range (Note 6) − 40 25 +125 °C
RqJA Thermal Resistance Junction to Ambient (Note 7) DFN−14 on Demo−board − 30 − °C/W
PD Power Dissipation Rating (Note 8) TA ≤ 105°C, − 666 − mW
RqJA = 30°C/W
TA ≤ 85°C − 1333 − mW
RqJA = 30°C/W
TA = 65°C − 2000 − mW
RqJA = 30°C/W
L Inductor for DC to DC converter (Note 5) 0.15 0.33 0.47 mH
Co Output Capacitor for DC to DC Converter (Note 5) 15 − 200 mF
Cin Input Capacitor for DC to DC Converter (Note 5) Per 1.0 A of IOUT 6.0 10.0 − mF
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Including de−ratings (Refer to the Application Information section of this document for further details)
6. The thermal shutdown set to 150°C (typical) avoids potential irreversible damage on the device due to power dissipation.
7. The RqJA is dependent of the PCB heat dissipation. Board used to drive this data was a NCV6357EVB board. It is a multilayer board with
1−once internal power and ground planes and 2−once copper traces on top and bottom of the board.
8. The maximum power dissipation (PD) is dependent on input voltage, maximum output current, pcb stack up and layout, and external
components selected.
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Figure 4. Efficiency vs ILOAD and VIN Figure 5. Efficiency vs ILOAD and Temperature
VOUT = 3.3 V, SPM5030 Inductor VOUT = 3.3 V, VIN = 5.0 V, SPM5030 Inductor
Figure 6. Efficiency vs ILOAD and VIN Figure 7. Efficiency vs ILOAD and Temperature
VOUT = 1.8 V, SPM5030 Inductor VOUT = 1.8 V, SPM5030 Inductor
Figure 8. Efficiency vs ILOAD and VIN Figure 9. Efficiency vs ILOAD and Temperature
VOUT = 0.60 V, SPM5030 Inductor VOUT = 0.60 V, SPM5030 Inductor
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Figure 10. Efficiency vs ILOAD and VIN Figure 13. Efficiency vs ILOAD and Temperature
VOUT = 1.80 V VOUT = 1.80 V
Figure 11. Efficiency vs ILOAD and VIN Figure 12. Efficiency vs ILOAD and VIN
VOUT = 0.60 V VOUT = 1.10 V
Figure 15. Efficiency vs ILOAD and VIN Figure 14. Efficiency vs ILOAD and VIN
VOUT = 1.25 V VOUT = 3.30 V
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Figure 17. VOUT Accuracy vs ILOAD and VIN Figure 18. VOUT Accuracy vs VIN and Temperature
VOUT = 1.80 V VOUT = 1.80 V
Figure 20. VOUT Accuracy vs ILOAD and VIN Figure 21. VOUT Accuracy vs ILOAD and VIN
VOUT = 0.600 V VOUT = 1.10 V
Figure 19. VOUT Accuracy vs ILOAD and VIN Figure 16. VOUT Accuracy vs ILOAD and VIN
VOUT = 1.25 V VOUT = 3.3 V
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Figure 22. HSS RON vs VIN and Temperature Figure 27. LSS RON vs VIN and Temperature
Figure 23. IOFF vs VIN and Temperature Figure 24. ISLEEP vs VIN and Temperature
Figure 25. IQ PFM vs VIN and Temperature Figure 26. IQ PPWM vs VIN and Temperature
VOUT = 1.25 V VOUT = 1.25 V
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Figure 28. Switchover Point VOUT = 1.15 V Figure 29. Switchover Point VOUT = 1.4 V
Figure 30. Switching Frequency vs ILOAD and VIN Figure 31. Switching Frequency vs ILOAD and
VOUT = 1.10 V Temperature VOUT = 1.10 V
Figure 32. Ripple Figure 33. Normal Power Up, VOUT = 1.15 V
DVS[1..0] = 00
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Figure 34. Transient load 0.05 to 1.5 A Figure 35. Transient load 0.05 to 1.5 A
Transient line 3.0 – 3.6 V Auto mode Transient line 3.6 – 3.0 V Auto mode
Figure 36. Transient load 0.05 to 1.5 A Figure 37. Transient load 0.05 to 1.5 A
Transient line 3.0 – 3.6 V Forced PPW Transient line 3.6 – 3.0 V Forced PPWM
Figure 38. Transient load 1.0 to 2.5 A Figure 39. Transient load 2.0 to 3.5 A
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NCV6357
Under Voltage Lock Out (UVLO) discharge path is enabled and is activated during the first
NCV6357 core does not operate for voltages below the 100 ms after battery insertion.
Under Voltage Lock Out (UVLO) level. Below the UVLO
threshold, all internal circuitry (both analog and digital) is Enabling
held in reset. NCV6357 operation is guaranteed down to The EN pin controls NCV6357 start up. EN pin Low to
UVLO as the battery voltage is dropping off. To avoid erratic High transition starts the power up sequencer. If EN is low,
on / off behavior, a maximum 200 mV hysteresis is the DC to DC converter is turned off and device enters:
implemented. Restart is guaranteed at 2.7 V when the VBAT • Sleep Mode if Sleep_Mode I2C bit is high or VSEL is
voltage is recovering or rising. high or I2C pull up present
• Off Mode if Sleep_Mode I2C bit and VSEL are low and
Thermal Management
no I2C pull up
Thermal Shut Down (TSD)
Battery monitoring for UVLO and Overvoltage When EN pin is set to a high level, the DC to DC converter
Protectione thermal capability of the NCV6357 can be can be enabled / disabled by writing the ENVSEL0 or
exceeded due to the step down converter output stage power ENVSEL1 bit of the COMMAND registers:
level.. A thermal protection circuitry with associated • Enx I2C bit is high, the DC to DC converter is
interrupt is therefore implemented to prevent the IC from activated.
damage. This protection circuitry is only activated when the • Enx I2C is low, the DC to DC converter is turned off
core is in active mode (output voltage is turned on). During and the device enters in Sleep Mode.
thermal shut down, output voltage is turned off.
During thermal shut down, the output voltage is turned A built in pull down resistor disables the device when this
off. pin is left unconnected or not driven. EN pin activity does
When NCV6357 returns from thermal shutdown, it can not generate any digital reset.
re−start in 2 different configurations depending on the Power Up Sequence (PUS)
REARM bit in the LIMCONF register (refer to the register In order to power up the circuit, the input voltage AVIN
description section): has to rise above the VUVLO threshold. This triggers the
• If REARM = 0 then NCV6357 does not re−start after internal core circuitry power up which is the “Wake Up
TSD. To restart, an EN pin toggle is required Time” (including “Bias Time”).
• If REARM = 1, NCV6357 re−starts with register values This delay is internal and cannot be bypassed. EN pin
set prior to thermal shutdown transition within this delay corresponds to the “Initial power
up sequence” (IPUS):
The thermal shut down threshold is set at 150°C (typical) AVIN
and a 30°C hysteresis is implemented in order to avoid
erratic on / off behavior. After a typical 150°C thermal shut UVLO
POR
down, NCV6357 will resume to normal operation when the
ÉÉÉÉ
EN
die temperature cools to 120°C.
Thermal Warnings
In addition to the TSD, the die temperature monitoring
circuitry includes a thermal warning and thermal
VOUT ÉÉÉÉ
∼ 80 ms
DELAY[2..0]
32 ms
pre−warning sensor and interrupts. These sensors can Wake up Init DVS ramp
inform the processor that NCV6357 is close to its thermal Time Time Time
shutdown and preventive measures to cool down die Figure 40. Initial Power Up Sequence
temperature can be taken by software.
The Warning threshold is set by hardware to 135°C In addition a user programmable delay will also take place
typical. The Pre−Warning threshold is set by default to between the Wake Up Time and the Init time: The
105°C but it can be changed by setting the TPWTH[1..0] bits DELAY[2..0] bits of the TIME register will set this user
in the LIMCONF register. programmable delay with a 2 ms resolution. With default
delay of 0 ms, the NCV6357 IPUS takes roughly 100 ms, and
Active Output Discharge the DC to DC converter output voltage will be ready within
To make sure that no residual voltage remains in the power 150 ms.
supply rail when disabled, an active discharge path can The power up output voltage is defined by the VSEL state.
ground the NCV6357 output voltage. For maximum NOTE: During the Wake Up time, the I2C interface is
flexibility, this feature can be easily disabled or enabled with not active. Any I2C request to the IC during this
the DISCHG bit in the PGOOD register. By default the time period will result in a NACK reply.
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NCV6357
M DELAY[2..0]
32 ms
O voltage will decrease accordingly. The DVS step is fixed and
D
E the speed is programmable.
TFTR Bias
Time
Init DVS ramp
Time Time
The DVS sequence is automatically initiated by changing
the output voltage settings. There are two ways to change
Figure 41. Normal Power Up Sequence these settings:
AVIN
• Directly change the active setting register value
UVLO
POR
(VoutVSEL0[7..0] of the PROGVSEL0 register or
S
EN L
VoutVSEL1[7..0] of the PROGVSEL1 register) via an
E I2C command
E
P • Change the VSEL internal signal level by toggling the
VSEL pin
10 ms
M DELAY[2..0]
32 ms
O
D
E The second method eliminates the I2C latency and is
TFTR Bias
Time
Init DVS ramp
Time Time
therefore faster.
The DVS transition mode can be changed with the
Figure 42. Quick Power Up Sequence
AVIN
DVSMODE bit in the COMMAND register:
• In forced PPWM mode when accurate output voltage
UVLO
POR control is needed. Rise and fall time are controlled with
S
VSEL L the DVS[1..0] bits
E
E
P Internal V2 Output
VOUT M Reference Voltage
32 ms
O DV
D
E
Dt
T Init DVS ramp
Time Time V1
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NCV6357
SEN_TWARN
Delay Programmed in
TOR [2: 0] ACK_TWARN
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NCV6357
Configurations
Default output voltages, enables, DCDC modes, current limit and other parameters can be factory programmed upon request.
Below is the default configurations pre−defined:
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NCV6357
START IC ADDRESS 1 ACK DATA 1 ACK DATA n /ACK STOP READ OUT FROM PART
1 à READ
/ACK
START IC ADDRESS 0 ACK DATA 1 ACK DATA n STOP WRITE INSIDE PART
ACK
If PART does not Acknolege, the /NACK will be followed by a STOP or Sr (repeated start).
0 à WRITE
The first byte transmitted is the Chip address (with the LSB bit set to 1 for a read operation, or set to 0 for a Write operation).
The following data will be:
• During a Write operation, the register address (@REG) is written in followed by the data. The writing process is
auto−incremental, so the first data will be written in @REG, the contents of @REG are incremented and the next data
byte is placed in the location pointed to by @REG + 1 …, etc
• During a Read operation, the NCV6357 will output the data from the last register that has been accessed by the last
write operation. Like the writing process, the reading process is auto−incremental.
Read Sequence
The Master will first make a “Pseudo Write” transaction with no data to set the internal address register. Then, a stop then
start or a Repeated Start will initiate the read transaction from the register address the initial write transaction has pointed to:
SETS INTERNAL
REGISTER POINTER
0 à WRITE
n REGISTERS READ
1 à READ
The first WRITE sequence will set the internal pointer to the register that is selected. Then the read transaction will start at
the address the write transaction has initiated.
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NCV6357
Write Sequence
Write operation will be achieved by only one transaction. After chip address, the REG address has to be set, then following
data will be the data we want to write in REG, REG + 1, REG + 2, …, REG + n.
Write n Registers:
0 à WRITE
n REGISTERS WRITE
0 à WRITE
k REGISTERS READ
1 à READ
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NCV6357
I2C Address
The NCV6357 has 8 available I2C addresses selectable by factory settings (ADD0 to ADD7). Different address settings can
be generated upon request to ON Semiconductor. See Table 5 (NCV6357 Configuration) for the default I2C address.
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NCV6357
Register Map
The tables below describe the I2C registers.
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Registers Description
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APPLICATION INFORMATION
NCV6357
Supply Input
AVIN
4.7 mF PVIN
Core Supply Input
AGND
10 mF
Thermal
Protection
DCDC
5A
Enable Control EN SW
Input Operating
Modular 330 nH
Voltage VSEL Mode
Driver
Selection Control
2 × 22 mF
PG Output PGND
Power Good
Monitoring
FB
DCDC
GND Processor
I2C 2.4 MHz Sense
SDA Core
Processor I@C Controller
Control Interface GND
SCL
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NCV6357
Thermal Rules
Good PCB layout improves the thermal performance and
thus allows for high power dissipation even with a small IC
package. Thermal layout guidelines are:
• A four or more layers PCB board with solid ground
planes is preferred for better heat dissipation
• Use multiple vias around the IC to connect the inner Figure 55. Placement Recommendation
ground layers to reduce thermal impedance
• Use a large and thick copper area especially in the top
layer for good thermal conduction and radiation
• Use two layers or more for the high current paths
(PVIN, PGND, SW) in order to split current into
different paths and limit PCB copper self−heating
Component Placement
• Input capacitor placed as close as possible to the IC
• PVIN directly connected to Cin input capacitor, and
then connected to the Vin plane. Local mini planes used
on the top layer (green) and the layer just below the top
layer (yellow) with laser vias
• AVIN connected to the Vin plane just after the capacitor
• AGND directly connected to the GND plane
Figure 56. Demo Board Example
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NCV6357
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MECHANICAL CASE OUTLINE
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