CEM3109

Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY

FEATURES

30V, 10A, RDS(ON) = 14mΩ @VGS = 10V.

RDS(ON) = 20mΩ @VGS = 4.5V.

-30V, -8A, RDS(ON) = 20mΩ @VGS = -10V.

RDS(ON) = 30mΩ @VGS = -4.5V.

Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2

8 7 6 5
High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8
1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter Symbol Channel 1 Channel 2 Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Drain Current-Continuous ID 10 -8 A
Drain Current-Pulsed a
IDM 40 32 A

Maximum Power Dissipation PD 2.0 W

Operating and Store Temperature Range TJ,Tstg -55 to 150 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient b RθJA 62.5 C/W

This is preliminary information on a new product in development now . Rev 1. 2011.Sep

Details are subject to change without notice . http://www.cetsemi.com
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 CEM3109
N-Channel(Q1) Electrical Characteristics TA = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 V
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V 1 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 1 3 V
Static Drain-Source VGS = 10V, ID = 9A 11 14 mΩ
RDS(on)
On-Resistance VGS = 4.5V, ID = 5A 18 20 mΩ
Dynamic Characteristics c
Input Capacitance Ciss 905 pF
VDS = 25V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 170 pF
Reverse Transfer Capacitance Crss 125 pF
Switching Characteristics c
Turn-On Delay Time td(on) 13 26 ns
Turn-On Rise Time tr VDD = 15V, ID = 1A, 6 12 ns
VGS = 10V, RGEN = 4Ω
Turn-Off Delay Time td(off) 33 66 ns
Turn-Off Fall Time tf 5 10 ns
Total Gate Charge Qg 12.2 16.2 nC
VDS = 24V, ID = 9A,
Gate-Source Charge Qgs VGS = 4.5V 2.4 nC
Gate-Drain Charge Qgd 7.2 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS 1.5 A
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 1.5A 1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.

2
 CEM3109
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -30 V
Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -1 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS, ID = -250µA -1 -3 V
Static Drain-Source VGS = -10V, ID = -8A 15 20 mΩ
RDS(on)
On-Resistance VGS = -4.5V, ID = -4A 22 30 mΩ
Dynamic Characteristics c
Input Capacitance Ciss 1770 pF
VDS = -25V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 255 pF
Reverse Transfer Capacitance Crss 180 pF
Switching Characteristics c
Turn-On Delay Time td(on) 16 32 ns
Turn-On Rise Time tr VDD = -15V, ID = -1A, 6 12 ns
VGS = -10V, RGEN = 4Ω
Turn-Off Delay Time td(off) 52 104 ns
Turn-Off Fall Time tf 9 18 ns
Total Gate Charge Qg 18.9 25.1 nC
VDS = -24V, ID = -8A,
Gate-Source Charge Qgs VGS = -4.5V 5.1 nC
Gate-Drain Charge Qgd 9.4 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS -1.5 A
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -1.5A -1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.

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 CEM3109
N-CHANNEL
10 20

VGS=10,8,6V
8 16
ID, Drain Current (A)

ID, Drain Current (A)

6 12
VGS=3V
4 8

25 C
2 4 TJ=125 C
-55 C

0 0
0 1 2 3 4 5 6 0 2 4 6

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

1200 2.2
ID=9A
RDS(ON), On-Resistance(Ohms)

VGS=10V
1000 Ciss 1.9
C, Capacitance (pF)

RDS(ON), Normalized

800 1.6

600 1.3

400 1.0

Coss
200 0.7

Crss
0 0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS VGS=0V
Gate-Source Threshold Voltage

ID=250µA
IS, Source-drain current (A)

1.2
1
1.1 10
VTH, Normalized

1.0

0.9
0
10
0.8

0.7

-1
0.6 10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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 CEM3109
P-CHANNEL
10 15

-VGS=10,8,6V TJ=125 C
8 12
-ID, Drain Current (A)

-ID, Drain Current (A)

-55 C
-VGS=3V
6 9

4 6

25 C
2 3

0 0
0 0.8 1.6 2.4 3.2 4.0 4.8 0 1 2 3 4 5 6

-VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

2400 2.2
ID=-8A
RDS(ON), On-Resistance(Ohms)

VGS=-10V
2000 Ciss 1.9
C, Capacitance (pF)

RDS(ON), Normalized

1600 1.6

1200 1.3

800 1.0

Coss
400 0.7

Crss
0 0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

-VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS VGS=0V
Gate-Source Threshold Voltage

-IS, Source-drain current (A)

1.2 ID=-250µA

1.1
VTH, Normalized

1
10
1.0

0.9
0
10
0.8

0.7

-1
0.6 10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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 CEM3109
N-CHANNEL
2
5 V =24V 10
VGS, Gate to Source Voltage (V)

DS
ID=9A RDS(ON)Limit
4

ID, Drain Current (A)

1 10ms
10
100ms
3 1s
0
10 DC
2

-1
10
1
TA=25 C
TJ=150 C
Single Pulse
0 10
-2
0 4 8 12 16 -2 -1 0 1 2
10 10 10 10 10

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 13. Gate Charge Figure 14. Maximum Safe

P-CHANNEL Operating Area
2
5 V =-24V 10
-VGS, Gate to Source Voltage (V)

DS
ID=-8A RDS(ON)Limit
4
-ID, Drain Current (A)

1
10 10ms
100ms
3 1s
0
10 DC
2

-1
10
1 TA=25 C
TJ=150 C
Single Pulse
0 -2
10 -2 -1 0 1 2
0 5 10 15 20 10 10 10 10 10

Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V)

Figure 15. Gate Charge Figure 16. Maximum Safe

Operating Area

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 CEM3109
VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 17. Switching Test Circuit Figure 18. Switching Waveforms

Transient Thermal Impedance

0
10
r(t),Normalized Effective

D=0.5

0.2
-1 PDM
10 0.1
t1
0.05 t2

1. RθJA (t)=r (t) * RθJA

0.02 2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
-2
Single Pulse 4. Duty Cycle, D=t1/t2
10
-4 -3 -2 -1 0 1 2
10 10 10 10 10 10 10

Square Wave Pulse Duration (sec)

Figure 19. Normalized Thermal Transient Impedance Curve