Scribd
Upload
147 views2 pages

Shantou Huashan Electronic Devices Co.,Ltd.: CBO CEO EBO CES FE CE (Sat) BE (ON) T

This document provides specifications for an NPN silicon transistor from Shantou Huashan Electronic Devices Co., Ltd. It is suitable for amplifier and switching applications requiring low power. The document lists absolute maximum ratings including storage temperature, junction temperature and collector dissipation. It also provides typical electrical characteristics such as breakdown voltages, current and gain values, saturation voltage, and capacitance. Transistors are classified according to a range of DC current gain values.

Uploaded by

RãŸàñe Hãmãdouçhé
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
147 views2 pages

Shantou Huashan Electronic Devices Co.,Ltd.: CBO CEO EBO CES FE CE (Sat) BE (ON) T

This document provides specifications for an NPN silicon transistor from Shantou Huashan Electronic Devices Co., Ltd. It is suitable for amplifier and switching applications requiring low power. The document lists absolute maximum ratings including storage temperature, junction temperature and collector dissipation. It also provides typical electrical characteristics such as breakdown voltages, current and gain values, saturation voltage, and capacitance. Transistors are classified according to a range of DC current gain values.

Uploaded by

RãŸàñe Hãmãdouçhé
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

N P N S I L I C O N T RAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.


H337
█ SWITCHING AND AMPLFIER APPLICATIONS
Suitable for AF-Driver stages and low power output stages

█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92

T stg ——Storage Temperature………………………… -55~150℃

T j ——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………625mW
1―Collector，C
VCBO——Collector-Base Voltage………………………………50V 2―Base，B
3―Emitter，E
VCEO——Collector-Emitter Voltage……………………………45V

V EB O ——Emitter-Base Voltage………………………………5V

I C ——Collector Current……………………………………800mA

█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Min Typ Max Unit Test Conditions
BVCBO Collector-Base Breakdown Voltage 50 V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage 45 V IC=10mA, IB=0
BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0
ICES Collector Cut-off Current 2 100 nA VCE=45V, VBE=0
HFE DC Current Gain 100 630 VCE=1V, IC=100mA
VCE(sat) Collector- Emitter Saturation Voltage 0.7 V IC=500mA, IB=50mA
VBE(ON) Base-Emitter On Voltage 1.2 V VCE=1V, IC=300mA
fT Current Gain-Bandwidth Product 100 MHz VCE=5V, IC=10mA
VCB=10V, IE=0
Ccbo Collector-Base Capacitance 12 pF
F=1MHz

█ hFE Classification

16 25 40

100—250 160—400 250—630


N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H337

You might also like