NPN EPITAXIAL
KSE800/801/803 SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
MIN hFE= 750 @IC= 1.5 and 2.0A DC TO-126
MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE-EMITTER RESISTORS
• Complement to KSE700/701/702/703
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage VCBO
: KSE800/801 60 V
: KSE802/803 80 V
Collector-Emitter Voltage VCEO
: KSE800/801 60 V
: KSE802/803 80 V
Emitter- Base Voltage VEBO 5 V 1. Emitter 2. Collector 3. Base
Collector Current IC 4 A
Base Current IB 0.1 A
Collector Dissipation (TC=25°C) PC 40 W
Junction Temperature TJ 150 °C
Storage Temperature T STG -55 ~ 150 °C
ELECTRICAL CHARACTERISTICS (TC=25°C)
Characteristic Symbol Test Condition Min Max Unit
Collector Emitter Breakdown Voltage BVCEO IC = 50mA, IB = 0
: KSE800/801 60 V
: KSE802/803 80 V
Collector Cutoff Current ICEO
: KSE800/801 VCE = 60V, IB = 0 100 µA
: KSE802/803 VCE = 80V, IB = 0 100 µA
Collector Cutoff Current ICBO VCB = Rated BVCEO, IE = 0 100 µA
VCB = Rated BVCEO, IE = 0 500 µA
T C = 100°C
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 2 mA
DC Current Gain : KSE800/802 hFE VCE = 3V, IC = 1.5A 750
: KSE801/803 VCE = 3V, IC = 2A 750
: ALL DEVICES VCE = 3V, IC = 4A 100
Collector-Emitter Saturation Voltage VCE(sat)
: KSE800/802 IC = 1.5A, IB = 30mA 2.5 V
: KSE801/803 IC = 2A, IB = 40mA 2.8 V
: ALL DEVICES IC = 4A, IB = 40mA 3 V
Base-Emitter On Voltage VBE(on)
: KSE800/802 VCE = 3V, IC = 1.5A 1.2 V
: KSE801/803 VCE = 3V, IC = 2A 2.5 V
: ALL DEVICES VCE = 3V, IC = 4A 3 V
Rev. B
1999 Fairchild Semiconductor Corporation
NPN EPITAXIAL
KSE800/801/803 SILICON DARLINGTON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ ISOPLANAR™
CoolFET™ MICROWIRE™
CROSSVOLT™ POP™
E2CMOSTM PowerTrench™
FACT™ QS™
FACT Quiet Series™ Quiet Series™
FAST® SuperSOT™-3
FASTr™ SuperSOT™-6
GTO™ SuperSOT™-8
HiSeC™ TinyLogic™
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
