KSH41C
KSH41C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix) 1 D-PAK 1 I-PAK
• Electrically Similar to Popular TIP41 and TIP41C 1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 6 A
ICP Collector Current (Pulse) 10 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (Ta=25°C) 1.75 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V
ICEO Collector Cut-off Current VCE = 60V, IB = 0 50 µA
ICES Collector Cut-off Current VCE = 100V, VBE = 0 10 uA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 0.5 mA
hFE * DC Current Gain VCE = 4V, IC = 0.3A 30
VCE = 4V, IC = 3A 15 75
VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V
VBE(on) * Base-Emitter On Voltage VCE = 6A, IC = 4A 2 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 3 MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
KSH41C
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000 10
VCE = 2V IC = 10 IB
hFE, DC CURRENT GAIN
100 1 VBE(sat)
10 0.1
V CE(sat)
1 0.01
0.01 0.1 1 10 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1000 VCC = 30V
IC = 10.IB
tR, tD [µs], TURN ON TIME
Cob[pF], CAPACITANCE
1
100
tR
0.1
10
tD. V BE(off)=5V
0.01
0.01 0.1 1 10
1
0.1 1 10 100
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Capacitance Figure 4. Turn On Time
10
100
tF, tSTG [µs], TURN OFF TIME
ICP (max)
IC[A], COLLECTOR CURRENT
10
10
1 tSTG 0µ
50 s
0µ
IC(max) 1m s
s
5m
1
s
DC
0.1 tF
0.1
0.01
0.01 0.1 1 10 0.01
1 10 100 1000
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
KSH41C
Typical Characteristics (Continued)
25
20
PC[W], POWER DISSIPATION
15
10
0
0 25 50 75 100 125 150 175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
KSH41C
Package Dimensions
D-PAK
6.60 ±0.20
0.70 ±0.20
5.34 ±0.30 2.30 ±0.10
(0.50) (4.34) (0.50) 0.50 ±0.10
0.60 ±0.20
6.10 ±0.20
0.91 ±0.10
9.50 ±0.30
2.70 ±0.20
MIN0.55
0.80 ±0.20
0.89 ±0.10
MAX0.96 0.76 ±0.10
0.50 ±0.10
2.30TYP 2.30TYP 1.02 ±0.20
[2.30±0.20] [2.30±0.20] 2.30 ±0.20
6.60 ±0.20
(5.34)
(0.70)
(0.90)
(1.00)
(5.04)
(1.50)
(3.05)
6.10 ±0.20
(2XR0.25)
9.50 ±0.30
2.70 ±0.20
(0.10)
0.76 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
KSH41C
Package Dimensions (Continued)
I-PAK
6.60 ±0.20 2.30 ±0.20
5.34 ±0.20
(0.50) (4.34) (0.50) 0.50 ±0.10
±0.20
±0.20
±0.20
0.60
0.70
6.10
±0.10
±0.30
0.80
16.10
±0.20
±0.30
MAX0.96
1.80
9.30
0.76 ±0.10
2.30TYP 2.30TYP 0.50 ±0.10
[2.30±0.20] [2.30±0.20]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™
ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™
Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic™
E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
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Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation Rev. I1