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Absolute Maximum Ratings T 25 : Shantou Huashan Electronic Devices Co.,Ltd

This document provides specifications for the PNP silicon transistor HA940 made by Shantou Huashan Electronic Devices Co.,Ltd. It lists the intended applications, maximum ratings, electrical characteristics, and output capacitance. Key specifications include a current gain of 40-140, saturation voltage below -1.5V, and current gain-bandwidth product of 4MHz.

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62 views2 pages

Absolute Maximum Ratings T 25 : Shantou Huashan Electronic Devices Co.,Ltd

This document provides specifications for the PNP silicon transistor HA940 made by Shantou Huashan Electronic Devices Co.,Ltd. It lists the intended applications, maximum ratings, electrical characteristics, and output capacitance. Key specifications include a current gain of 40-140, saturation voltage below -1.5V, and current gain-bandwidth product of 4MHz.

Uploaded by

alexjcc10
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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PNP S I L I C O N T R AN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.


HA940
█ APPLICATIONS
Vertical Deflection Output Power Amplifier.

█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）


TO-220
T stg ——Storage Temperature………………………… -55~150℃

T j ——Junction Temperature…………………………………150℃

PC——Collector Dissipation（Tc=25℃）……………………………25W

PC——Collector Dissipation（Ta=25℃）…………………………1.5W 1―Base，B


VCBO——Collector-Base Voltage………………………………-150V 2―Collector，C
3―Emitter，E
VCEO——Collector-Emitter Voltage……………………………-150V

V E B O ——Emitter-Base Voltage………………………………-5V

IC——Collector Current……………………………………………-1.5A

Ib——Base Current………………………………………………-0.5A

█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Min Typ Max Unit Test Conditions
BVCBO Collector-Base Breakdown Voltage -150 V IC=-500μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage -150 V IC=-10mA, IB=0
BVEBO Emitter-Base Breakdown Voltage -5 V IE=-500μA，IC=0
HFE DC Current Gain 40 75 140 VCE=-10V, IC=-500mA
VCE(sat) Collector- Emitter Saturation Voltage -1.5 V IC=-500mA, IB=-50mA
VBE(ON) Base-Emitter On Voltage -0.65 -0.75 -0.85 V VCE=-10V, IC=-500mA
ICBO Collector Cut-off Current -10 μA VCB=-120V, IE=0
IEBO Emitter Cut-off Current -10 μA VEB=-5V, IC=0
fT Current Gain-Bandwidth Product 4 MHz VCE=-10V,IC=-500mA
Cob Output Capacitance 55 pF VCB=-10V, IE=0,f=1MHz
Shantou Huashan Electronic Devices Co.,Ltd.
HA940

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