UNISONIC TECHNOLOGIES CO.
, LTD
2SC1384 NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC 2SC1384 is power amplifier and driver.
FEATURES
* Low VCE(SAT)
* 2~3W output in complementary pair with 2SA684
Lead-free: 2SC1384L
Halogen-free: 2SC1384G
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Plating Halogen-Free 1 2 3
2SC1384-x-AB3-R 2SC1384L-x-AB3-R 2SC1384G-x-AB3-R SOT-89 B C E Tape Reel
2SC1384-x-T9N-B 2SC1384L-x-T9N-B 2SC1384G-x-T9N-B TO-92NL E C B Tape Box
2SC1384-x-T9N-K 2SC1384L-x-T9N-K 2SC1384G-x-T9N-K TO-92NL E C B Bulk
2SC1384-x-T9N-R 2SC1384L-x-T9N-R 2SC1384G-x-T9N-R TO-92NL E C B Tape Reel
www.unisonic.com.tw 1 of 5
Copyright © 2008 Unisonic Technologies Co., Ltd QW-R211-005.C
2SC1384 NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Peak Collector Current ICP 1.5 A
Collector Current (DC) IC 1 A
Collector Dissipation (Ta=25℃) PC 1000 mW
Junction Temperature TJ 125 ℃
Operating Temperature TOPR -20 ~ +85 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 60 V
Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 50 V
Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 5 V
Collector Cut-Off Current ICBO VCB=20V, IE=0 0.1 μA
hFE1 VCE=10V, IC=500mA 85 160 340
DC Current Gain
hFE2 VCE=5V, IB=1A 50 100
Collector-Emitter Saturation Voltage VCE(SAT) IC=0.5A, IB=50mA 0.2 0.4 V
Base-Emitter Saturation Voltage VBE(SAT) IC=0.5A, IB=50mA 0.85 1.2 V
Current Gain Bandwidth Product fT VCE=10V, IB=50mA 200 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 11 20 pF
CLASSIFICATION OF hFE
RANK Q R S
RANGE 85-170 120-240 170-340
UNISONIC TECHNOLOGIES CO., LTD 2 of 5
www.unisonic.com.tw QW-R211-005.C
Collector Current, IC (A) Collector Power Dissipation, PC (W)
2SC1384
www.unisonic.com.tw
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Collector To Emitter Saturation Voltage,
VCE(SAT) (V) Collector Current, IC (A)
3 of 5
NPN SILICON TRANSISTOR
QW-R211-005.C
2SC1384 NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Transition Frequency vs. Collector Output Capacitance vs.
Emitter Current Collector to Base Voltage
200 50
IE=0
180 VCB=10V 45
Ta=25℃ F=1MHz
160 40
Ta=25℃
140 35
120 30
100 25
80 20
60 15
40 10
20 5
0 0
-1 -3 -10 -30 -100 1 3 10 30 100
Emitter Current, IE (mA) Collector To Base Voltage, VCB (V)
Collector to Emitter Voltage vs. Collector to Emitter Current vs.
Base to Emitter Resistance Ambient Temperature
120 104
IC=10mA VCE=10V
100 Ta=25℃
103
80
60 102
40
10
20
0
0.1 0.3 1 3 10 30 100 1
0 20 40 60 80 100 120 140 160
Base To Emitter Resistance, RBE (KΩ)
Ambient Temperature, Ta (℃)
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD 4 of 5
www.unisonic.com.tw QW-R211-005.C
2SC1384 NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD 5 of 5
www.unisonic.com.tw QW-R211-005.C
