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TIP110A

This document provides information about the TIP110A PNP silicon transistor from Unisonic Technologies Co., Ltd. It describes the features and applications of the transistor and provides its absolute maximum ratings, electrical characteristics, and ordering information.
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© © All Rights Reserved
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0% found this document useful (0 votes)
44 views3 pages

TIP110A

This document provides information about the TIP110A PNP silicon transistor from Unisonic Technologies Co., Ltd. It describes the features and applications of the transistor and provides its absolute maximum ratings, electrical characteristics, and ordering information.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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UNISONIC TECHNOLOGIES CO.

, LTD
TIP110A Preliminary PNP SILICON TRANSISTOR

LOW SATURATION VOLTAGE


PNP DARLINGTON
TRANSISTOR

„ DESCRIPTION
The UTC TIP110A is designed for using in general purpose
amplifier and switching applications.
„ FEATURES
* Low VCE(SAT)
* High Current Gain

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
TIP110AL-TA3-T TIP110AG-TA3-T TO-220 B C E Tube

www.unisonic.com.tw 1 of 3
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R203-004.C
TIP110A Preliminary PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified)


PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO -45 V
Collector to Emitter Voltage VCEO -35 V
Emitter to Base Voltage VEBO -5 V
Collector Current IC -10 A
Power Dissipation PD 65 W
Junction Temperature TJ 150 °С
Storage Temperature TSTG -55 ~ +150 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=-10mA, IE=0A -45
Collector-Emitter Breakdown Voltage BVCEO IC =-1mA, IB =0A -35 V
Emitter-Base Breakdown Voltage BVEBO IE=-10mA, IC=0A -5
Collect Cut-off Current ICBO VCB =-45V, IE =0A -4 μA
Collector-Emitter Cut-Off Current ICEO VCE =-35V, IB=0A -10 μA
Emitter Cut-off Current IEBO VBE =-5V, IC=0A -2.0 mA
Collector-Emitter Saturation Voltage VCE(SAT) IC =-10A, IB =-0.1A -2.0 V
Base-Emitter On Voltage VBE(ON) VCE =-2.0V ,IC =-5mA -2.0 V
hFE1 VCE =-2.0V ,IC =-0.5A 2000 60000
DC Current Gain
hFE2 VCE =-2.0V ,IC =-10A 1000 60000

UNISONIC TECHNOLOGIES CO., LTD 2 of 3


www.unisonic.com.tw QW-R203-004.C
TIP110A Preliminary PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD 3 of 3


www.unisonic.com.tw QW-R203-004.C

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