UNISONIC TECHNOLOGIES CO.

, LTD
MMBTA42 NPN SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

„ DESCRIPTION
The UTC MMBTA42 are high voltage transistors, designed for
telephone switch and high voltage switch.
„ FEATURES
* Collector-Emitter voltage: VCEO=300V
* High current gain
* Collector Dissipation: Pc (max) =350mW

Lead-free: MMBTA42L
Halogen-free: MMBTA42G
„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Halogen Free 1 2 3
MMBTA42-AE3-R MMBTA42L-AE3-R MMBTA42G-AE3-R SOT-23 E B C Tape Reel

„ MARKING

1D. L: Lead Free

G: Halogen Free

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MMBTA42 NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 6 V
Collector Dissipation (Ta=25°C) PC 350 mW
Collector Current IC 500 mA
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied

„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 300 V
Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB=0 300 V
Emitter-Base Breakdown Voltage BVEBO IE=100μA, IC =0 6 V
Collector-Emitter Saturation Voltage VCE(SAT) IC =20mA, IB=2mA 0.2 V
Base-Emitter Saturation Voltage VBE(SAT) IC =20mA, IB=2mA 0.90 V
Collector Cut-Off Current ICBO VCB=200V, IE=0 100 nA
Emitter Cut-Off Current IEBO VBE=6V, IC =0 100 nA
VCE=10V, IC =1mA 80
DC Current Gain hFE VCE=10V, IC =10mA 80 300
VCE=10V, IC =30mA 80
Current Gain Bandwidth Product fT VCE=20V, IC=10mA, f=100MHz 50 MHz
Collector Base Capacitance Ccb VCB=20V, IE=0, f=1MHz 3 pF

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MMBTA42 NPN SILICON TRANSISTOR

„ TYPICAL CHARACTERISTICS

DC Current Gain vs. Output Current DC Current Gain vs. Output Current
1K V =5V 1K
DC Current Gain, hFE (Normalized)

CE VCE=10V

DC Current Gain, hFE (Normalized)

500 500
Ta=150°C Ta=150℃ Ta=25℃
200 Ta=25°C 200
100 Ta=-50°C 100
Ta=-50℃
50 50

20 20
10 10
5 5

2 2
1 1
1 2 5 10 20 50 100 200 500 1 2 5 10 20 50 100 200 500
Collector Current, IC (mA) Collector Current, IC (mA)

Collector Emitter Saturation vs. Collector Emitter Saturation vs.

Collector Current Collector Current
2.0 1.0
IC/IB=10 VCE=5V
Base Emitter Voltage, VBE(ON) (V)

1.8 0.9
Collector to Emitter Saturation

1.6 0.8 Ta=-50°C

Voltage, VCE(SAT) (V)

1.4 0.7
1.2 0.6
Ta=25°C
1.0 0.5
Ta=150°C
0.8 0.4
0.6 Ta=25°C 0.3
0.4 0.2 Ta=150°C

0.2 0.1
Ta=-50°C
0.0 0.0
1 2 5 10 20 50 100 200 500 0.1 1 10 100
Collector Current, IC (mA) Collector Current, IC (mA)

Power Derating Power Dissipation

Current Gain Bandwidth Product vs. Case Temperature
1000.0 400
VCE=5V
Current Gain Bandwidth Product

350
Power Dissipation, Pc (mW)

300
250
Ta=25°C
(MHz)

100.0 200

150
100

50
10.0 0
2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 175
Collector Current, IC (mA) Case Temperature, TC (°C)

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MMBTA42 NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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