UNISONIC TECHNOLOGIES CO.

, LTD
2SC4672 NPN SILICON TRANSISTOR

LOW FREQUENCY TRANSISTOR

 DESCRIPTION
The UTC 2SC4672 is a low frequency transistor. Excellent DC
current gain characteristics.

 FEATURES 1

*Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA SOT-89

*Excellent DC Current Gain Characteristics

 ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SC4672L-x-AB3-R 2SC4672G-x-AB3-R SOT-89 B C E Tape Reel
Note: Pin Assignment: B: Base C: Collector E: Emitter

2SC4672G-x-AB3-R
(1)Packing Type (1) R: Tape Reel
(2)Package Type (2) AB3: SOT-89
(3)Rank (3) x: refer to Classification of hFE
(4)Green Package (4) G: Halogen Free and Lead Free, L: Lead Free

 MARKING

Date Code
DK
L: Lead Free
G: Halogen Free

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2SC4672 NPN SILICON TRANSISTOR
 ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 6 V
Collector Current IC 3 A
Collector Current (Pulse) (Note 2) ICP 6 A
Collector Dissipation PC 0.9 (Note 3) W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -40 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse, PW=10ms.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. (25×20×0.7mm)
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 250 °С/W
Junction to Case θJC 40 °С/W

 ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC =50A 60 V
Collector-Emitter Breakdown Voltage BVCEO IC =1mA 50 V
Emitter-Base Breakdown Voltage BVEBO IE =50A 6 V
Collector Cutoff Current ICBO VCB=60V 0.1 A
Emitter Cutoff Current IEBO VEB=5V 0.1 A
Base Emitter On Voltage VBE (ON) VCE =2V, IC =1A 0.5 0.77 1.0 V
Base-Emitter Saturation Voltage VBE (SAT) IC=1A, IB=50mA 0.6 0.85 1.1 V
Collector-Emitter Saturation Voltage VCE(SAT) IC /IB=1A/50mA (Note) 0.1 0.35 V
DC Current Transfer Ratio hFE VCE=2V, IC =0.5A (Note) 120 400
Transition Frequency fT VCE=2V, IE =-0.5A, f=100MHz 210 MHz
Output Capacitance COB VCB=10V, IE =0A,f=1MHz 25 pF
Note : Measured using pulse current.

■ CLASSIFICATION OF hFE
RANK A B
RANGE 120 ~ 240 200 ~ 400

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2SC4672 NPN SILICON TRANSISTOR
 TYPICAL CHARACTERISTICS

Collector Current vs. Colector- Base - Emitter Voltage vs.

Emitte Voltage Collector Current
0.5 1
2mA
0.45

Base - Emitter Voltage, VBE(SAT) (V)

5mA
10I B
Collector Current, IC (A)

0.4 0.8 I C=
3mA T),
0.35 1.5mA V BE(SA
2.5mA 2V
),
V CE=
0.3 0.6 V BE(ON
0.25
1mA
0.2 0.4
0.15
0.1 IB=0.5mA 0.2
0.05
0 0
0 0.5 1 1.5 2 0.001 0.01 0.1 1
Colector-Emitte Voltage, VCE (V) Collector Current, IC (A)

Saturation Voltage vs. Collector DC Current Gain vs. Collector

Current Current
140 5000
Saturation Voltage, VCE(SAT) (mV)

VCE = 2V
120
DC Current Gain, hFE

100
500 TA=25°C
80
IB
20

IB
IC =

60
10
IC =

50
40

20

0 5
0.001 0.01 0.1 1 0.001 0.01 0.1 1 10
Collector Current, IC (A) Collector Current, IC (A)

Power Dissipation vs. Ambient

Temperature Safe Operating Area
1.6 10
IC MAX.(Pulsed)
SOT-89
1.4 IC MAX (Continuous)
Power Dissipation, PD(W)

1m

1.2 1
Collector Current, IC (A)

S
10

1
mS

0.8 0.1 DC

0.6
FR-4 board
0.4 0.01

0.2

0 0.001
0 20 40 60 80 100 120 140 160 0.1 1 10 100

Ambient Temperature, TA(°C) Collector-Emitter Voltage, VCE(V)

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2SC4672 NPN SILICON TRANSISTOR
 TYPICAL CHARACTERISTICS

Collector-Emitter Saturation Voltage Collector-Emitter Saturation

vs. Collector Current Voltage vs. Collector Current
300 300
Collector-Emitter Saturation Voltage,

Rank A Rank B

Collector-Emitter Saturation Voltage,

250 TA=75°C 250 TA=75°C
25°C
25°C
200 -25°C 200
VCE(SAT) (mV)

-25°C

VCE(SAT) (mV)
150 150

100 -40°C 100

-40°C
50 50

0 0
0.01 0.1 1 10 0.01 0.1 1 10
Collector Current, IC (A) Collector Current, IC (A)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein .
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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