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2sb649 2sb649a

The document provides specifications for the 2SB649/A PNP silicon transistor, including its applications, ordering information, maximum ratings, thermal data, and electrical characteristics. It details various package types and pin assignments, along with typical characteristics and performance metrics. The document emphasizes the importance of adhering to specified ratings to avoid equipment failure.
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0% found this document useful (0 votes)
23 views5 pages

2sb649 2sb649a

The document provides specifications for the 2SB649/A PNP silicon transistor, including its applications, ordering information, maximum ratings, thermal data, and electrical characteristics. It details various package types and pin assignments, along with typical characteristics and performance metrics. The document emphasizes the importance of adhering to specified ratings to avoid equipment failure.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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UNISONIC TECHNOLOGIES CO.

, LTD
2SB649/A PNP SILICON TRANSISTOR

BIPOLAR POWER GENERAL


PURPOSE TRANSISTOR 1 1
SOT-223 SOT-89

 APPLICATIONS
1
* Low frequency power amplifier complementary pair with UTC 1
2SD669/A TO-252 TO-92

1 1
TO-92NL TO-126

1 1
TO-126C TO-126S

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SB649XL-x-AA3-R 2SB649xG-x-AA3-R SOT-223 B C E Tape Reel
2SB649XL-x-AB3-R 2SB649xG-x-AB3-R SOT-89 B C E Tape Reel
2SB649xL-x-TN3-R 2SB649xG-x-TN3-R TO-252 B C E Tape Reel
2SB649xL-x-T60-K 2SB649xG-x-T60-K TO-126 E C B Bulk
2SB649xL-x-T6C-K 2SB649xG-x-T6C-K TO-126C E C B Bulk
2SB649xL-x-T6S-K 2SB649xG-x-T6S-K TO-126S E C B Bulk
2SB649xL-x-T92-B 2SB649xG-x-T92-B TO-92 E C B Tape Box
2SB649xL-x-T92-K 2SB649xG-x-T92-K TO-92 E C B Bulk
2SB649xL-x-T9N-B 2SB649xG-x-T9N-B TO-92NL E C B Tape Box
2SB649xL-x-T9N-K 2SB649xG-x-T9N-K TO-92NL E C B Bulk
Note: Pin Assignment: C: Collector B: Base E: Emitter

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Copyright © 2017 Unisonic Technologies Co., Ltd QW-R204-006.K
2SB649/A PNP SILICON TRANSISTOR

 MARKING
MARKING
PACKAGE
2SB649 2SB649A

SOT-223

SOT-89

TO-252

TO-92

UTC UTC
L: Lead Free L: Lead Free
TO-92NL 2SB649 2SB649A
G: Halogen Free G: Halogen Free
Data Code Data Code

TO-126
TO-126C
TO-126S

UNISONIC TECHNOLOGIES CO., LTD 2 of 5


www.unisonic.com.tw QW-R204-006.K
2SB649/A PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)


PARAMETER SYMBOL RATING UNIT
Collector-Base Voltage VCBO -180 V
2SB649 -120 V
Collector-Emitter Voltage VCEO
2SB649A -160 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 A
Collector Peak Current lC(PEAK) -3 A
SOT-89 0.5 W
SOT-223 1 W
TO-92/TO-92NL 0.6 W
Power Dissipation PD
TO-126 1 W
TO-126C/TO-126S 1.3
TO-252 2 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -40 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
SOT-89 38
SOT-223 15
TO-92/ TO-92NL 80
Junction to Case θJC °C/W
TO-126 6.25
TO-126C/TO-126S 10
TO-252 4.5

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)


PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 -180 V
Collector to Emitter 2SB649 -120
BVCEO IC=-10mA, RBE= V
Breakdown Voltage 2SB649A -160
Emitter to Base Breakdown Voltage BVEBO IE=-1mA, IC=0 -5 V
Collector Cut-off Current ICBO VCB=-160V, IE=0 -10 μA
hFE1 VCE=-5V, IC=-150mA (note) 60 320
2SB649
hFE2 VCE=-5V, IC=-500mA (note) 30
DC Current Gain
hFE1 VCE=-5V, IC=-150mA (note) 60 200
2SB649A
hFE2 VCE=-5V, IC=-500mA (note) 30
Collector-Emitter Saturation Voltage VCE(SAT) IC=-600mA, IB=-50mA -1 V
Base-Emitter Voltage VBE VCE=-5V, IC=-150mA -1.5 V
Current Gain Bandwidth Product fT VCE=-5V,IC=-150mA 140 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 27 pF
Note: Pulse test.

 CLASSIFICATION OF hFE1
RANK
RANGE
B C D
2SB649 60-120 100-200 160-320
2SB649A 60-120 100-200 -

UNISONIC TECHNOLOGIES CO., LTD 3 of 5


www.unisonic.com.tw QW-R204-006.K
2SB649/A PNP SILICON TRANSISTOR

 TYPICAL CHARACTERISTICS

Typical Output Characteristecs Typical Transfer Characteristics


1.0 -500
VCE=-5V
.5
0
-4.
-5
.0

5
-3. 0
5 -5

0.8

Collector Current, IC (mA)


-3.
Collector Current, IC (A)

.
-4

5 -100
-2.
PD
=2
0W
0.6 -2.0

5°С
-1.5

-25°С
25°С
Ta=7
0.4
-1.0 -10

0.2 -0.5mA

IB=0 TC=25°С
-1
0 -10 -20 -30 -40 -50 0 -0.2 -0.4 -0.6 -0.8 -1.0
Collector to Emitter Voltage, VCE (V) Base to Emitter Voltage, VBE (V)

DC Current Transfer Ratio vs. Collector to Emitter Saturation


Collector Current Voltage vs. Collector Current
350 -1.2
VCE=-5V IC=10 IB
5°С
Ta=7
DC Current Transfer Ratio, hFE

Collector to Emitter Saturation

300
-1.0
Voltage, VCE(SAT) (V)

250
25°С -0.8
200
-0.6
-25°С
150
-0.4

С 5°С
100
5°С
-0.2 =7 5° 2
TC
50
-2

1 0
-1 -10 -100 -1,000 -1 -10 -100 -1,000
Collector Current, IC (mA) Collector Current, IC (mA)

Base to Emitter Saturation Voltage Gain Bandwidth Product


vs. Collector Current vs. Collector Current
-1.2 -240
VCE=5V
Base to Emitter Saturation Voltage,

Gain Bandwidth Product, fT (MHz)

Ta=25°С
IC=10IB -200
-1.0
25°С
T C=-
-0.8 -160
VBE(SAT) (V)

25°С
-0.6 75°С -120

-0.4 -80

-0.2 -40

0 0
-1 -3 -10 -30 -100 -300 -1000 -10 -30 -100 -300 -1000
Collector Current, IC (mA) Collector Current, IC (mA)

UNISONIC TECHNOLOGIES CO., LTD 4 of 5


www.unisonic.com.tw QW-R204-006.K
2SB649/A PNP SILICON TRANSISTOR

 TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance, Cob (pF)

Collector Current, IC (A)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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www.unisonic.com.tw QW-R204-006.K

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