UNISONIC TECHNOLOGIES CO.
, LTD
8550S PNP SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright 2014 Unisonic Technologies Co., Ltd QW-R206-002.F
LOW VOLTAGE HI GH
CURRENT SMALL SI GNAL
PNP TRANSI STOR
DESCRI PTI ON
The UTC 8550S is a low voltage high current small signal
PNP transistor, designed for Class B push-pull audio amplifier
and general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
SOT-23
1
3
2
TO-92
1
ORDERI NG I NFORMATI ON
Ordering Number
Package
Pin Assignment
Packing
Lead Free Halogen-Free 1 2 3
8550SL-x-AE3-R 8550SG-x-AE3-R SOT-23 E B C Tape Reel
8550SL-x-T92-B 8550SG-x-T92-B TO-92 E C B Tape Box
8550SL-x-T92-K 8550SG-x-T92-K TO-92 E C B Bulk
MARKI NG
SOT-23 TO-92
8550S PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R206-002.F
ABSOLUTE MAXI MUM RATI NGS ( T
A
=25C, unless otherwise specified )
PARAMETER SYMBOL RATING UNITS
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -700 mA
Collector Dissipation(Ta=25C)
SOT-23
P
C
350 mW
TO-92 1 W
Junction Temperature TJ +150 C
Storage Temperature TSTG -40 ~ +150 C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRI CAL CHARACTERI STI CS (T
A
= 25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=-100A, IE=0 -30 V
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 -20 V
Emitter-Base Breakdown Voltage BVEBO IE=-100A, IC=0 -5 V
Collector Cut-off Current ICBO VCB=-30V, IE=0 -1 A
Emitter Cut-off Current IEBO VEB=-5V, IC =0 -100 nA
DC Current Gain
h
FE1
VCE=-1V, IC=-1mA 100
h
FE2
VCE=-1V, IC=-150mA 120 400
hFE3 VCE=-1V, IC=-500mA 40
Collector-Emitter Saturation Voltage VCE(SAT) IC=-500mA, IB=-50mA -0.5 V
Base-Emitter Saturation Voltage VBE(SAT) IC=-500mA, IB=-50mA -1.2 V
Base-Emitter Saturation Voltage VBE VCE=-1V, IC=-10mA -1.0 V
Current Gain Bandwidth Product fT VCE=-10V, IC=-50mA 100 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 9.0 pF
CLASSI FI CATI ON OF h
FE2
RANK C D E
RANGE 120-200 160-300 280-400
8550S PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
www.unisonic.com.tw QW-R206-002.F
TYPI CAL CHARACTERI STI CS
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
,
I
c
(
m
A
)
D
C
C
u
r
r
e
n
t
G
a
i
n
,
h
F
E
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
,
I
c
(
m
A
)
S
a
t
u
r
a
t
i
o
n
V
o
l
t
a
g
e
(
m
V
)
C
u
r
r
e
n
t
G
a
i
n
-
B
a
n
d
w
i
d
t
h
P
r
o
d
u
c
t
,
f
T
(
M
H
z
)
C
a
p
a
c
i
t
a
n
c
e
,
C
o
b
(
p
F
)
8550S PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R206-002.F
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
