ST2310HI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■ NEW SERIES, ENHANCHED
PERFORMANCE
■ FULLY INSULATED PACKAGE FOR EASY
MOUNTING
■ HIGH VOLTAGE CAPABILITY
■ HIGH SWITCHING SPEED
■ TIGTHER hfe CONTROL
■ IMPROVED RUGGEDNESS
3
2
APPLICATIONS: 1
■ HORIZONTAL DEFLECTION FOR MONITOR
15” AND HIGH END TV
ISOWATT218
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 1500 V
V CEO Collector-Emitter Voltage (IB = 0) 600 V
V EBO Emitter-Base Voltage (IC = 0) 6 V
IC Collector Current 10 A
I CM Collector Peak Current (tp < 5 ms) 20 A
IB Base Current 7 A
P t ot Total Dissipation at Tc = 25 o C 55 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
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ST2310HI
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 2.3 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1500 V 1 mA
Current (V BE = 0)
I EBO Emitter Cut-off Current V EB = 7 V 1 mA
(I C = 0)
V CEO(sus )∗ Collector-Emitter I C = 100 mA L = 25 mH 600 V
Sustaining Voltage
(I B = 0)
V CE(sat )∗ Collector-Emitter IC = 7 A IB = 1.75 A 3 V
Saturation Voltage
V BE(s at)∗ Base-Emitt er IC = 7 A IB = 1.75 A 1.1 V
Saturation Voltage
h F E∗ DC Current Gain IC = 1 A V CE = 5 V 25
IC = 7 A V CE = 5 V 6.5 9.5
INDUCTIVE LO AD IC = 6 A fh = 64 KHz
ts Storage Time I B(o n) = 1.2 A V BB(off ) = -2.5 V 2.3 2.7 µs
tf Fall Time L B = 0.4 µH 380 450 ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
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ST2310HI
Derating Curve DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
Power Losses Switching Time Inductive Load
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Reverse Biased SOA
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ST2310HI
ISOWATT218 NARROW LEADS MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 0.75 0.95 0.030 0.037
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
F5 1.10 0.043
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm P025C/B
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ST2310HI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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