® ST13003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING 1
■ SWITCH MODE POWER SUPPLIES 2
3
DESCRIPTION
The device is manufactured using high voltage SOT-32
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting INTERNAL SCHEMATIC DIAGRAM
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CES Collector-Emitter Voltage (V BE = 0) 700 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage BV EBO V
o
(I C = 0, IB = 0.75 A, t p < 10µs, T j < 150 C)
IC Collector Current 1.5 A
I CM Collector Peak Current (t p < 5 ms) 3 A
IB Base Current 0.75 A
I BM Base Peak Current (t p < 5 ms) 1.5 A
P tot Total Dissipation at T c = 25 o C 40 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
August 2001 1/7
This datasheet has been downloaded from http://www.digchip.com at this page
ST13003
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 3.12 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 89 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEV Collector Cut-off V CE = 700V 1 mA
Current (V BE = -1.5V) V CE = 700V T j = 125 o C 5 mA
BV EBO Emitter-Base I E = 10 mA 9 18 V
Breakdown Voltage
(I C = 0)
V CEO(sus) ∗ Collector-Emitter I C = 10 mA 400 V
Sustaining Voltage L = 25 mH
(I B = 0)
V CE(sat) ∗ Collector-Emitter I C = 0.5 A I B = 0.1 A 0.5 V
Saturation Voltage IC = 1 A I B = 0.25 A 1 V
I C = 1.5 A I B = 0.5 A 3 V
V BE(sat) ∗ Base-Emitter I C = 0.5 A I B = 0.1 A 1 V
Saturation Voltage IC = 1 A I B = 0.25 A 1.2 V
h FE ∗ DC Current Gain I C = 0.5 A V CE = 2 V
Group A 8 20
Group B 15 35
IC = 1 A V CE = 2 V 5 25
RESISTIVE LOAD
tr Rise Time IC = 1 A V CC = 125 V 1 µs
ts Storage Time I B1 = 0.2 A I B2 = -0.2 A 4 µs
tf Fall Time T p = 25 µs 0.7 µs
INDUCTIVE LOAD IC = 1 A I B1 = 0.2 A
ts Storage Time V BE = -5 V L = 50 mH 0.8 µs
V clamp = 300 V
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note: Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
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ST13003
Safe Operating Areas Derating Curve
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
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ST13003
Inductive Fall Time Inductive Storage Time
Reverse Biased SOA
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ST13003
Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
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ST13003
SOT-32 (TO-126) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425
b 0.7 0.9 0.028 0.035
b1 0.40 0.65 0.015 0.025
C 2.4 2.7 0.094 0.106
c1 1.0 1.3 0.039 0.051
D 15.4 16.0 0.606 0.630
e 2.2 0.087
e3 4.4 0.173
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
I 1.27 0.05
O 0.3 0.011
o
V 10 10o
1: Base
2: Collector
3: Emitter
0016114/B
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ST13003
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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