ST13003DN

High voltage fast-switching NPN power transistor

Preliminary data

Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed

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■ Integrated free-wheeling diode

Application
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■ Compact fluorescent lamps (CFLs) r o 1

e P SOT-32
Description
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The device is manufactured using high voltage
multi epitaxial planar technology for high switching
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speeds and high voltage capability. It uses a
cellular emitter structure with planar edge O b Figure 1. Internal schematic diagram

termination to enhance switching speeds while

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maintaining the wide RBSOA.

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Table 1. Device summary

Order code Marking Package Packaging

ST13003DN 13003DN SOT-32 BAG

February 2010 Doc ID 17186 Rev 1 1/8

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8
change without notice.
 Electrical ratings ST13003DN

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VBE = 0) 700 V

VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Collector-base voltage (IC = 0) 9 V
IC Collector current 1 A
ICM Collector peak current (tP < 5 ms) 2 A
IB Base current 0.5
( sA)
IBM Base peak current (tP < 5 ms)

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PTOT Total dissipation at Tc = 25 °C

o d 20 W

Pr
TSTG Storage temperature -55 to 150
°C
TJ Max. operating junction temperature 150

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Table 3. Thermal data

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Symbol

RthJC
Parameter

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Thermal resistance junction-case
b Value

6.25
Unit

°C/W

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 ST13003DN Electrical characteristics

2 Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector cut-off current VCE = 700 V 1 mA

ICES
(VBE = 0) VCE = 700 V TC = 125 °C 5 mA
Emitter cut-off current
IEBO VEB = 9 V 1 mA
(IC = 0)
VCEO(sus) Collector-emitter sustaining
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(1) IC = 10 mA 400 V
voltage (IB = 0)

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Collector-emitter saturation IC = 0.5 A IB = 125 mA 0.7 V
VCE(sat) (1)
voltage IC = 1 A IB = 330 mA 1.2 V

Base-emitter saturation IC = 0.5 A IB = 125 mA

r o 1.2 V
VBE(sat) (1)
voltage IC = 1 A P
IB = 330 mA

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1.3 V

hFE DC current gain

IC = 0.5 A,

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VCE = 2 V 6 18

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IC = 1 A VCE = 10 V 5 15

ts
Inductive Load
Storage time b s
IC = 0.4 A _ Vclamp = 300 V
2.5 µs
tf Fall time
- O IB(on) = -IB(off) = 80 mA
VBB(off) = - 5 V Figure 2 180 ns
VF Diode forward voltage

( s ) IF = 350 mA 1.5 V

t
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %

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 Electrical characteristics ST13003DN

2.1 Test circuit

Figure 2. Inductive load switching test circuit

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1. Fast electronic switch
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2. Non-inductive resistor
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3. Fast recovery rectifier

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 ST13003DN Package mechanical data

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

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 Package mechanical data ST13003DN

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 ST13003DN Revision history

4 Revision history

Table 5. Document revision history

Date Revision Changes

25-Feb-2010 1 First release.

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 ST13003DN

Please Read Carefully:

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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
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o d
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(s )
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s o
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