RGPR30BM40

400V 30A Ignition IGBT Datasheet

lOutline
BVCES TO-252
40030V
IC 30A
(2)

VCE(sat) (Typ.) 1.6V (1)

(3)
EAS 300mJ
lFeatures lInner Circuit
1) Low Collector - Emitter Saturation Voltage (2)

2) High Self-Clamped Inductive Switching Energy (1) Gate

(2) Collector
(1)
3) Built in Gate-Emitter Protection Diode (3) Emitter

4) Built in Gate-Emitter Resistance

5) Qualified to AEC-Q101 (3)

6) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications

Packaging Taping

lApplications Reel Size (mm) 330

Ignition Coil Driver Circuits Tape Width (mm) 16
Type
Solenoid Driver Circuits Basic Ordering Unit (pcs) 2,500
Packing Code TL
Marking RGPR30BM40

lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)

Parameter Symbol Value Unit
Collector - Emitter Voltage VCES 430 V
Emitter-Collector Voltage (VGE = 0V) VEC 25 V
Gate - Emitter Voltage VGES 10 V
Collector Current IC 30 A
Tj = 25°C EAS 300 mJ
Avalanche Energy (Single Pulse)
Tj = 150°C EAS*2 180 mJ
Power Dissipation PD 125 W
Operating Junction Temperature Tj -40 to +175 °C
Storage Temperature Tstg -55 to +175 °C

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RGPR30BM40 Datasheet

lThermal Resistance
Values
Parameter Symbol Unit
Min. Typ. Max.

Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 1.20 °C/W

lElectrical Characteristics (at Tj = 25°C unless otherwise specified)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
IC = 2mA, VGE = 0V
Collector - Emitter Breakdown
BVCES Tj = 25°C 370 400 430 V
Voltage
Tj = -40 to 175°C*2 365 - 435 V

Emitter - Collector Breakdown

BVEC IC = -10mA, VGE = 0V 25 35 - V
Voltage

Gate - Emitter Breakdown

BVGES IG = 5mA, VCE = 0V 12 - 17 V
Voltage

VCE = 250V, VGE = 0V

Collector Cut - off Current ICES Tj = 25°C - - 7 μA

Tj = 150°C*2 - - 100 μA

Gate - Emitter Leakage Current IGES VGE = 10V, VCE = 0V 0.4 0.6 1.2 mA

VCE = 5V, IC = 12mA

Gate - Emitter Threshold
VGE(th) Tj = 25°C 1.3 1.7 2.1 V
Voltage
*2
Tj = 150°C - 1.3 - V
IC = 12A, VGE = 5V
Collector - Emitter Saturation
VCE(sat) Tj = 25°C - 1.60 2.00 V
Voltage
Tj = 150°C - 1.80 - V
IC = 5A, VGE = 4.5V
Collector - Emitter Saturation
VCE(sat) Tj = 25°C - 1.17 1.50 V
Voltage
Tj = 150°C - 1.19 - V

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RGPR30BM40 Datasheet

lElectrical Characteristics (at Tj = 25°C unless otherwise specified)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
IC = 12A, VGE = 4V
Collector - Emitter Saturation
VCE(sat) Tj = 25°C - 1.70 2.10 V
Voltage
Tj = 150°C - 1.90 - V

Input Capacitance Cies VCE = 10V - 1330 -

Output Capacitance Coes VGE = 0V - 220 - pF

Reverse Transfer Capacitance Cres f = 1MHz - 71 -

VCE = 12V, IC = 10A,

Total Gate Charge Qg - 22 - nC
VGE = 5V

Turn - on Delay Time*1,*2 td(on) 0.11 0.19 0.50

Rise Time*1,*2 tr IC = 8A, VCC = 300V, 0.10 0.18 0.50

VGE = 5V, RG = 100Ω, μs
Turn - off Delay Time*1,*2 td(off) L=5mH, Tj=25°C 0.9 1.4 4.0

Fall Time*1,*2 tf 0.8 1.8 5.5

Turn - on Delay Time*1 td(on) - 0.18 -

Rise Time*1 tr IC = 8A, VCC = 300V, - 0.21 -

VGE = 5V, RG = 100Ω, μs
Turn - off Delay Time*1 td(off) L=5mH, Tj=150°C - 1.7 -

Fall Time*1 tf - 3.0 -

L = 5mH, VGE = 5V,

VCC = 30V, RG = 1kΩ,
Avalanche Energy (Single Pulse) EAS
Tj = 25°C 300 - - mJ

Tj = 150°C*2 180 - - mJ

Gate Series Resistance RG 70 100 130 Ω

Gate - Emitter Resistance RGE 8 16 24 kΩ

*1) Assurance items according to our measurement definition (Fig.18)

*2) Design assurance items

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RGPR30BM40 Datasheet

lElectrical Characteristic Curves

Fig.1 Typical Output Characteristics Fig.2 Typical Output Characteristics

30 30
Tj= -40ºC Tj= 25ºC
VGE= 10V VGE= 10V
25 VGE= 4V 25
VGE= 8V VGE= 8V

Collector Current : IC [A]

Collector Current : IC [A]

VGE= 4V
20 VGE= 5V 20 VGE= 5V

VGE= 4.5V VGE= 4.5V

15 15 VGE= 3.5V
VGE= 3.5V

10 10

5 5

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector To Emitter Voltage : VCE[V] Collector To Emitter Voltage : VCE[V]

Fig.3 Typical Output Characteristics Fig.4 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
30 1.4
Tj= 175ºC IC= 5A
Collector To Emitter Saturation Voltage

VGE= 10V
25
VGE= 8V
Collector Current : IC [A]

1.3 VGE= 3.5V

VGE= 5V 4.5V 4V
20
VGE= 4.5V
: VCE(sat) [V]

15 1.2
VGE= 4V

10 VGE= 3.5V
1.1
5V
5 8V
10V

0 1
0 1 2 3 4 5 -50 0 50 100 150 200

Collector To Emitter Voltage : VCE[V] Junction Temperature : Tj [ºC]

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RGPR30BM40 Datasheet

lElectrical Characteristic Curves

Fig.5 Typical Collector To Emitter Saturation Fig.6 Typical Collector To Emitter Saturation
Voltage vs. Junction Temperature Voltage vs. Junction Temperature
2 4.5
IC= 10A VGE= 5V
Collector To Emitter Saturation Voltage

Collector To Emitter Saturation Voltage

VGE= 3.5V 4 IC= 30A
1.9
3.5
1.8
3 20A
4V
: VCE(sat) [V]

: VCE(sat) [V]
1.7 2.5
4.5V
2 5A 10A
1.6
1.5
1.5 5V

1.4
　1
0.5
8V 10V 4.5A 1A
1.3 0
-50 0 50 100 150 200 -50 0 50 100 150 200

Junction Temperature : Tj [ºC] Junction Temperature : Tj [ºC]

Fig.7 Typical Transfer Characteristics Fig.8 Typical Gate To Emitter Threshold Voltage
vs. Junction Temperature
30 2.5
VCE= 5V VCE= 5V
2.3 IC= 10mA
Gate To Emitter Threshold Voltage

25
2.1
Collector Current : IC [A]

1.9
20
1.7
: VGE (th) [V]

15 1.5

1.3
10
1.1
Tj= 175ºC 0.9
5 Tj= 25ºC
0.7
Tj= -40ºC
0 0.5
0 1 2 3 4 5 -50 0 50 100 150 200

Gate to Emitter Voltage : VGE [V] Junction Temperature : Tj [ºC]

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RGPR30BM40 Datasheet

lElectrical Characteristic Curves

Fig.9 Typical Leakage Current Fig.10 Typical Collector To Emitter Breakdown

vs. Junction Temperature Voltage vs. Junction Temperature
10000 410

Collector To Emitter Breakdown Voltage

VGE= 0V
Leakage Current : ICES/IEC [mA]

1000
VEC= 25V

100 400 ICES= 2mA

: BVCES [V]
10 VCES= 300V

1 390 ICES= 1mA

VCES= 250V
0.1

0.01 380
-50 0 50 100 150 200 -50 0 50 100 150 200

Junction Temperature : Tj [ºC] Junction Temperature : Tj [ºC]

Fig.11 Typical Self Clamped Inductive Fig.12 Typical Gate Charge

Switching Current vs. Inductance
40 5
Self Clamped Inductive Switching Current

VCC= 30V
Gate To Emitter Voltage : VGE [V]

35 VGE= 5V
RG= 1kΩ 4
30

25 3
: IAS [A]

20
2
15

10
1 VCC= 12V
IC= 10A
5 Tj= 25ºC

0 0
0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25

Inductance : L [mH] Gate Charge : Qg [nC]

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RGPR30BM40 Datasheet

lElectrical Characteristic Curves

Fig.13 Typical Capacitance Fig.14 Typical Switching Time

vs. Collector To Emitter Voltage vs. Junction Temperature
10000 10
VCC= 300V, IC= 8A,
Cies VGE= 5V, L= 5mH tf
1000

Switching Time [μs]

Capacitance [pF]

td(off)
100 1
Coes

10 tr
f= 1MHz
VGE= 0V Cres
Tj= 25ºC
td(on)
1 0.1
0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 200

Collector To Emitter Voltage : VCE[V] Junction Temperature : Tj [ºC]

Fig.15 Forward Bias Safe Operating Area

1000

100 10µs
Collector Current : IC [A]

10

100µs
1
1ms

0.1
10ms
TC= 25ºC
Single Pulse
0.01
1 10 100 1000

Collector To Emitter Voltage : VCE[V]

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© 2017 ROHM Co., Ltd. All rights reserved. 7/9 2017.05 - Rev.A
RGPR30BM40 Datasheet

lElectrical Characteristic Curves

Fig.16 Transient Thermal Impedance

1
Transient Thermal Impedance

D= 0.5 0.2 0.1

0.3
: ZthJC [ºC/W]

0.1
PDM
Single Pulse
t1
0.01
t2
0.02 C1 C2 C3 R1 R2 R3 Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.05 615.3u 3.003m 1.360m 231.2m 160.8m 408.0m

0.01
0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width : t1[s]

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RGPR30BM40 Datasheet

lInductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T. VGE
10%

VG
90%

Fig.17 Inductive Load Switching Circuit IC

10%
td(off)
td(on)
tr tf

ton toff

VCE

VCE(sat)

Fig.18 Inductive Load Switching Waveform

lSelf Clamped Inductive Switching Circuit and Waveform

Vclamp
IC

D.U.T.

VCE
VCC
VG VCE(sat)

EAS

Fig.19 Self Clamped Inductive Switching Ciruit Fig.20 Self Clamped Inductive Switching Waveform

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 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
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Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
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11) Please use the Products in accordance with any applicable environmental laws and regulations,
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R1102B
 Datasheet

RGPR30BM40HR - Web Page

Part Number RGPR30BM40HR

Package TO-252
Unit Quantity 2500
Minimum Package Quantity 2500
Packing Type Taping
Constitution Materials List inquiry
RoHS Yes