LESHAN RADIO COMPANY, LTD.

Silicon Epicap Diode MMBV109LT1

Designed for general frequency control and tuning applications;
MBV109T1
providing solid–state reliability in replacement of mechanical tuning MV209
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
26–32 pF
• Controlled and Uniform Tuning Ratio
VOLTAGE VARIABLE
• Available in Surface Mount Package
CAPACITANCE DIODES

3 1
CATHODE ANODE
1

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating Symbol Value Unit
MBV109T1 MMBV109LT1 MV209
Reverse Voltage VR 30 Vdc
Forward Current IF 200 mAdc
Device Dissipation PD
@T A = 25°C 280 200 200 mW
Derate above 25°C 2.8 2.0 1.6 mW/°C
Junction Temperature TJ +125 °C
Storage Temperature Range T stg –55 to +150 °C
DEVICEMARKING
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V (BR)R 30 — — Vdc
( I R = 10 µ Adc)
Reverse Voltage Leakage Current IR — — 0.1 mAdc
( V R = 25Vdc)
Diode Capacitance Temperature Coefficient
TC C — 300 — ppm/°C
(V R = 3.0 Vdc, f = 1.0 MHz)

C T Diode Capacitance Q, Figure of CR, Capacitance

Merit Ratio
VR =3.0Vdc, f =1.0MHz
V R = 3.0Vdc C3 / C 25
pF f = 50MHz f=1.0MHz (Note 1)
Device Type Min Nom Max Min Min Max
MBV109T1, MMBV109LT1, MV209 26 29 32 200 5.0 6.5
1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.

MBV109. MMBV109*. MV209*–1/2

 LESHAN RADIO COMPANY, LTD.

MBV109T1 MMBV109LT1 MV209

40 1000

36

32

Q , FIGURE OF MERIT
C T , CAPACITANCE (pF)

28

24

20 100

16

12

4
10
0
1 3 10 30 100 10 100 1000

V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( MHz )

Figure 1. Diode Capacitance Figure 2. Figure of Merit

1.04
CT,DIODECAPACITANCE(NORMALIZED)

100

20 1.03
I R , REVERSE CURRENT (nA)

10
1.02
2.0
1.01
1.0
1.00
0.2
0.1 0.99

0.02 0.98
0.01
0.97
0.002
0.001 0.96
–60 –40 –20 0 20 40 60 80 100 120 140 –75 –50 –25 0 +25 +50 +75 +100 +125

T A , AMBIENT TEMPERATURE (°C) T A , AMBIENT TEMPERATURE (°C)

Figure 3 . Leakage Current Figure 4. Diode Capacitance

NOTES ON TESTING AND SPECIFICATIONS

1. C R is the ratio of C t measured at 3.0 Vdc divided by C t measured at 25 Vdc.

MBV109. MMBV109*. MV209*–2/2

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.