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High Density A.C. Input Phototransistor Optically Coupled Isolators

The document summarizes optically coupled isolator components called TLP620X, TLP620-2X, and TLP620-4X. It provides key specifications like high isolation voltage of 5.3kV RMS, 7.5kV peak. The isolators consist of infrared LEDs and phototransistors in dual inline plastic packages. They feature options for lead spacing and surface mounting, and are intended for use in applications like computer terminals, industrial controllers, and telephone equipment to provide isolation between systems.
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0% found this document useful (0 votes)
15 views3 pages

High Density A.C. Input Phototransistor Optically Coupled Isolators

The document summarizes optically coupled isolator components called TLP620X, TLP620-2X, and TLP620-4X. It provides key specifications like high isolation voltage of 5.3kV RMS, 7.5kV peak. The isolators consist of infrared LEDs and phototransistors in dual inline plastic packages. They feature options for lead spacing and surface mounting, and are intended for use in applications like computer terminals, industrial controllers, and telephone equipment to provide isolation between systems.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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TLP620X, TLP620-2X, TLP620-4X

TLP620, TLP620-2, TLP620-4

HIGH DENSITY A.C. INPUT


PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS

APPROVALS TLP620
2.54 Dimensions in mm
z UL recognised, File No. E91231
Package Code "EE"
'X' SPECIFICATIONAPPROVALS 7.0 1 4
6.0
z VDE 0884 in 3 available lead forms : - 2 3
STD
- G form 1.2
- SMD approved to CECC 00802
5.08 7.62
4.08 4.0
3.0
DESCRIPTION 13°
The TLP620, TLP620-2, TLP620-4 series of 0.5 Max
optically coupled isolators consist of two infrared 3.0 0.26
light emitting diodes connected in inverse parallel 0.5 3.35
and NPN silicon photo transistors in space TLP620-2
efficient dual in line plastic packages. 2.54
1 8
7.0 2 7
FEATURES 6.0
3 6
z Options :-
10mm lead spread - add G after part no. 4 5
1.2
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no. 10.16 7.62
9.16 4.0
z High Isolation Voltage (5.3kVRMS ,7.5kVPK )
z AC or polarity insensitive input 3.0
z All electrical parameters 100% tested 0.5 13°
z Custom electrical selections available 3.0 Max
3.35 0.26
APPLICATIONS 0.5
z Computer terminals 1 16
z Industrial systems controllers TLP620-4 2 15
z Telephone sets, Telephone exchangers 3 14
z Signal transmission between systems of 2.54 4 13
different potentials and impedances
5 12
7.0
6.0 6 11
OPTION SM OPTION G 7 10
SURFACE MOUNT 7.62 1.2 8 9
20.32 7.62
19.32 4.0
3.0
0.6 13°
0.1 1.25 0.26 0.5
0.75 Max
10.46 10.16 0.26
9.86 3.0 0.5 3.35

ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581

11/11/09 DB92548
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 125°C


Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUTDIODE

Forward Current ± 50mA


Power Dissipation 70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BVCEO 55V


Emitter-collector Voltage BVECO 6V
Collector Current 50mA
Power Dissipation 150mW

POWER DISSIPATION

Total Power Dissipation 200mW


(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.0 1.15 1.3 V IF = ± 10mA

Output Collector-emitter Breakdown (BVCEO) 55 V IC = 0.5mA


( Note 2 )
Emitter-collector Breakdown (BVECO) 6 V IE = 100μA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 20V

Coupled Current Transfer Ratio (CTR) (Note 2)


TLP620, TLP620-2, TLP620-4 50 600 % ± 5mAIF , 5V VCE

CTR selection available GB 100 600 % ± 5mAIF , 5V VCE


30 % ± 1mAIF , 0.4V VCE

Collector-emitter Saturation VoltageVCE (SAT) 0.4 V ± 8mAIF , 2.4mAIC


GB 0.4 V ± 1mAIF , 0.2mAIC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1

Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1)

Rise Time,tr 4 18 μs VCE = 2V ,


Fall Time, tf 3 18 μs IC= 2mA, RL= 100Ω

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

11/11/09
DB92548
Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Low
Collector-emitter Voltage
200
TA = 25°C
Collector power dissipation PC (mW)

25

Collector current IC (mA)


150 ±50
20
±40
±30
15 ±20
100
±10
10

50 ±5
5
IF = ±2mA
0 0
-30 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1.0
Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V )

Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage

60
50 TA = 25°C
50
Forward current IF (±mA)

±50
Collector current IC (mA)

40
40 ±30
±20
30
30 ±15
20
20 ±10

10 10 IF = ±5mA

0 0
-30 0 25 50 75 100 125 0 2 4 6 8 10
Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V )

Collector-emitter Saturation Current Transfer Ratio vs. Forward Current


Collector-emitter saturation voltage VCE(SAT) (V)

Voltage vs. Ambient Temperature


0.28 320

0.24 280
Current transfer ratio CTR (%)

IF = ±5mA
0.20 IC = 1mA 240

200
0.16
160
0.12
120
0.08
80 VCE = 5V
0.04 TA = 25°C
40
0 0
-30 0 25 50 75 100 1 2 5 10 20 50
Ambient temperature TA ( °C ) Forward current IF (±mA)

11/11/09
DB92548

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