ME25N06(-G)

N-Channel Enhancement MOSFET

GENERAL DESCRIPTION FEATURES

The ME25N06 is the N-Channel logic enhancement mode power ● RDS(ON)≦62mΩ@VGS=10V
● RDS(ON)≦86mΩ@VGS=4.5V
field effect transistors are produced using high cell density, DMOS
● Super high density cell design for extremely low RDS(ON)
trench technology. This high density process is especially tailored to
● Exceptional on-resistance and maximum DC current
minimize on-state resistance. These devices are particularly suited
capability
for low voltage application such as cellular phone and notebook
APPLICATIONS
computer power management and other battery powered circuits
● Power Management in Note book
where high-side switching, and low in-line power loss are needed in a
● DC/DC Converter
very small outline surface mount package. ● Load Switch
● LCD Display inverter

PIN CONFIGURATION
(TO-252)
Top View

e Ordering Information: ME25N06 (Pb-free)

ME25N06-G (Green product)

Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Parameter Symbol Rating Unit

Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±25 V
Continuous Drain TC=25℃ 16
ID A
Current(Tj=150℃) TC=70℃ 13
Pulsed Drain Current IDM 65 A
TC=25℃ 25
Maximum Power Dissipation PD W
TC=70℃ 16
Operating Junction Temperature TJ -55 to 150 ℃
Thermal Resistance-Junction to Case * RθJC Steady State 5 ℃/W

* The device mounted on 1in2 FR4 board with 2 oz copper

Dec,2008-Ver1.0 01
 ME25N06(-G)
N-Channel Enhancement MOSFET
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)

Symbol Parameter Limit Min Typ Max Unit

STATIC
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 V
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 3 V
IGSS Gate Leakage Current VDS=0V, VGS=±25V ±100 nA
VDS=60V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current μA
VDS=60V, VGS=0V,TJ=55℃ 10

a
VGS=10V, ID= 15A 52 62
RDS(ON) Drain-Source On-Resistance mΩ
VGS=4.5V, ID= 10A 70 86
VSD Diode Forward Voltage IS=15A, VGS=0V 1 V
DYNAMIC
Qg Total Gate Charge 17
Qgs Gate-Source Charge VDS=48V, VGS=10V, ID=16A 4.2 nC
Qgd Gate-Drain Charge 5
Rg Gate Resistance VDS=0V, VGS=0V, f=1MHz 0.6 Ω
Ciss Input Capacitance 523
VDS=30V, VGS=0V,
Coss Output Capacitance 47 pF
f=1MHz
Crss Reverse Transfer Capacitance 14
td(on) Turn-On Delay Time 11
VDD=30V, RL =15Ω
tr Turn-On Rise Time 13
ID=1A, VGEN=10V ns
td(off) Turn-Off Delay Time 34
RG=3Ω
tf Turn-Off Fall Time 4
Notes: a, pulse test: pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing.
Matsuki reserves the right to improve product design, functions and reliability without notice.

Dec,2008-Ver1.0 02
 ME25N06(-G)
N-Channel Enhancement MOSFET

Typical Characteristics (TJ =25℃ Noted)

Dec,2008-Ver1.0 03
 ME25N06(-G)
N-Channel Enhancement MOSFET

Typical Characteristics (TJ =25℃ Noted)

Dec,2008-Ver1.0 04
 ME25N06(-G)
N-Channel Enhancement MOSFET

TO-252 Package Outline

MILLIMETERS (mm)
SYMBOL
MIN MAX
A 2.00 2.50
A1 0.90 1.30
B 0.50 0.85
B1 0.50 0.80
B2 0.50 1.00
C 0.40 0.60
D 5.20 5.70
D2 6.50 7.30
D3 2.20 3.00
H 9.50 10.50
E 6.30 6.80
E2 4.50 5.50
L 1.30 1.70
L1 0.90 1.70
L2 0.50 1.10
L3 0 0.30
P 2.00 2.80

Dec,2008-Ver1.0 05