2301

P-Channel 20-V(D-S) Mosfet

DESCRIPTION
The 2301 uses advanced trench technology to provide D

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a G
load switch or in PWM applications.

S
GENERAL FEATURES
● Schematic diagram

VDSS RDS(ON) RDS(ON) ID

@-4.5V(Typ) @-2.5V(Typ)

-20V 64mΩ 89 mΩ -3 A

● High Power and current handing capability

● Lead free product is acquired Marking and pin Assignment
● Surface Mount Package

Application
●PWM applications
●Load switch
SOT-23
●Power management

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±12 V
Drain Current-Continuous ID -3 A
Drain Current -Pulsed (Note 1) IDM -10 A
Maximum Power Dissipation PD 1 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 125 ℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 -24 - V
Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - -1 μA

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 2301
P-Channel 20-V(D-S) Mosfet

Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA

On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.4 -0.7 -1 V
VGS=-4.5V, ID=-3A - 64 110 mΩ
Drain-Source On-State Resistance RDS(ON)
VGS=-2.5V, ID=-2A - 89 140 mΩ
Forward Transconductance gFS VDS=-5V,ID=-2.8A - 9.5 - S
Dynamic Characteristics (Note4)
Input Capacitance Clss - 405 - PF
VDS=-10V,VGS=0V,
Output Capacitance Coss - 75 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 55 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 11 - nS
Turn-on Rise Time tr VDD=-10V,ID=-1A - 35 - nS
Turn-Off Delay Time td(off) VGS=-4.5V,RGEN=10Ω - 30 - nS
Turn-Off Fall Time tf - 10 - nS
Total Gate Charge Qg - 3.3 12 nC
VDS=-10V,ID=-3A,
Gate-Source Charge Qgs - 0.7 - nC
VGS=-2.5V
Gate-Drain Charge Qgd - 1.3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.3A - - -1.2 V
Diode Forward Current (Note 2) IS - - -1.3 A

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production

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 2301
P-Channel 20-V(D-S) Mosfet

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

ton toff
tr tf
td(on) td(off)

90% 90%

VOUT INVERTED
10% 10%

90%
VIN 50% 50%

10%
PULSE WIDTH

Figure 1:Switching Test Circuit Figure 2:Switching Waveforms

ID- Drain Current (A）

PD Power(W)

TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)

Figure 3 Power Dissipation Figure 4 Drain Current
Rdson On-Resistance(Ω)
ID- Drain Current (A)

Vds Drain-Source Voltage (V) ID- Drain Current (A)

Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance

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 2301
P-Channel 20-V(D-S) Mosfet

Normalized On-Resistance
ID- Drain Current (A)

Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance
Rdson On-Resistance(Ω)

C Capacitance (pF)

Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC) Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

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 2301
P-Channel 20-V(D-S) Mosfet

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area
Transient Thermal Impedance
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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