Si 9121
Si 9121
FEATURES
Fixed +5-V or +3.3-V Output −10-V to −60-V Input Voltage Range Current Mode Control
Integrated Floating Feedback Amplifier 95-kHz PWM Operation Hiccup Mode Short Circuit
On-Chip 70-V, 1.5- N-Channel Integrated Soft-Start and Oscillator Protection
MOSFET Switch High Efficiency Over Full Load Range Thermal Shutdown
Integrated High Voltage Start-Up Circuit, Under Voltage Lockout SOIC-8 Narrow-Body Package
with VCC Regulator
DESCRIPTION
The Si9121 simplifies the −48-V to +5-V or +3.3-V converter In order to reduce external component count, the Si9121 has
design for ISDN application by integrating the floating a fully integrated 95-kHz oscillator and soft-start circuit.
feedback error amplifier providing direct output voltage
regulation. This approach eliminates the need for an external
shunt regulator. The Si9121 also integrates a high voltage The Si9121 is available in both standard and lead (Pb)-free
depletion mode MOSFET which allows the converter to be SOIC-8 pin packages, and is offered in either +5-V or +3.3-V
powered directly from the high input bus voltage without fixed output options (Si9121DY-5 or Si9121DY-3,
requiring an external start-up circuit. Combined with simple respectively). In order to satisfy the stringent ambient
magnetic design due to its non-isolated topology, the Si9121 temperature requirements in many applications, the Si9121 is
provides a one-chip solution for complete ISDN power supply. rated to the industrial temperature range of −40 C to 85 C.
GND
VCC Regulator
VCC
Reference Generator
VOUT
BYPASS
VOUT
LX +5 V/400 mA
or
+3.3 V/400 mA
Control
COMP VNEG CS
VNEG
−48 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
SPECIFICATIONSa (All Voltages Are With Respect To VNEG Unless Otherwise Specified)
Test Conditions (Internally Regulated) Limits
Unless Otherwise Specified
p −40 to 85_C
Parameter Symbol VNEG = −10 to −60 V Tempb Minc Typd Maxc Unit
Output Voltage (with respect to GND = 0 V)
+5-V Converter Full 4.80 5.00 5.20
VOUT 10 mA <ILOAD < 250 mA V
+3.3-V Converter Full 3.17 3.30 3.43
UVLO
VCC −
Under Voltage Lockout Turn-On Full 6.6 7.6 8.7
VNEG V
Hysteresis DV Room 0.6
Soft-Start
Error Amplifier Start-Up Current ISS VOUT = 0 V Room 10 mA
Oscillator
Switching Frequency fOSC Room 80 95 110 kHz
Error Amplifier
Transconductance gm Room 10 15 20 umho
Internal Error Amplifier
Clamp Voltage VCL Room 3.5 V
Output Clamp Voltage
Current Limit
Threshold Voltage VCS Full 0.57 0.67 0.77 V
MOSFET Switch
N-Channel MOSFET rDS(on) Room 1.5 2.5 W
SPECIFICATIONSa (All Voltages Are With Respect To VNEG Unless Otherwise Specified)
Test Conditions (Internally Regulated) Limits
Unless Otherwise Specified
p −40 to 85_C
Parameter Symbol VNEG = −10 to −60 V Tempb Minc Typd Maxc Unit
Supply
Supply Current
IGND GND to VNEG Full 1.2 1.5
(Internally Regulater)
Supply Current
ICC VCC to VNEG +10 V; VNEG >−20 V Full 1.5 2.0 mA
(External VCC Applied)
VOUT supply Current IOUT VOUT to VNEG Full 0.2 0.3
Start-Up Current ISTART VCC = 0 V Full 5 30
Thermal Shutdown
Thermal Shutdown Temperature TOTP 170
_C
Thermal Hysteresis THYS 25
Efficiency
+5 V Room 77
Efficiency 400 mA Output
400-mA Output, VNEG = −48
48 V %
+3.3 V Room 73
Notes
a. Refer to PROCESS OPTION FLOWCHART for additional information.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
4
5 COMP
VOUT
10 mA 2 mA
R1* VCC VNEG
− + Soft Start
GM H
+ 3.5 V −
R2*
+ VREF − Hiccup Discharge Mode
L
− 1.25 V 1.5 V +
6
GND
OSC OTP
7
VCC 8
0.6 V 50% Max. LX
− PWM Duty Cycle
−
+
Low Side +
Error Amp
R Q −VIN
OCL
3 Bias/
BYPASS Reference +
Circuit
0.67 V −
1
CS
−
− +
0.6-V Hysteresis
+
+ *R1 and R2 are internal voltage setting resistors used to set
2 8.5 V −
output voltage to fixed 3.3 V or 5 V.
VNEG
5.10 3.40
5.05 3.35
V OUT (V)
V OUT (V)
5.00 3.30
4.95 3.25
4.90 3.20
4.85 3.15
−40 −20 0 20 40 60 80 100 −40 −20 0 20 40 60 80 100
Temperature (_C) Temperature (_C)
2.0 100
Frequency (kHz)
1.5 95
1.0 90
0.5 85
−40 −20 0 20 40 60 80 100 −40 −20 0 20 40 60 80 100
Temperature (_C) Temperature (_C)
1.3
25_C
1.2
85_C
−40_C
1.1
1.0
−60 −50 −40 −30 −20 −10
VNEG − (V)
Output Load vs. Efficiency (Si9121DY-3) Output Load vs. Efficiency (Si9121DY-5)
No VCC Winding No VCC Winding
90 90
80 VIN = 10 V 80 10 VIN
70 70
60 60
Efficiency (%)
48 VIN
Efficiency (%)
60 VIN
VIN = 48 V 50
50
VIN = 60 V
40 40
30 30
20 20
10 10
0 0
10 100 1000 10 100 1000
Output Load vs. Efficiency (Si9121DY-3) Output Load vs. Efficiency (Si9121DY-5)
With VCC Winding With VCC Winding
90 90
48 VIN
VNEG = −10 V 80
80 10 VIN
70 70
60 VIN
60 60
Efficiency (%)
VNEG = −48 V
Efficiency (%)
50 50
40 VNEG = −60 V 40
30 30
20 20
10 10
0 0
10 100 1000 10 100 1000
IOUT (mA)
IOUT (mA)
ORDERING INFORMATION
SOIC-8 Part Number Temperature Range Package
CS 1 8 LX Si9121DY-5-T1
Si9121DY-5-T1—E3
VNEG 2 7 VCC
Si9121 Tape and Reel
Si9121DY-3-T1
BYPASS 3 6 GND
−40
40 to 85_C
Si9121DY-3-T1—E3
COMP 4 5 VOUT
Si9121DY-5
Bulk
Top View Si9121DY-3
PIN DESCRIPTION
Pin Number Name Function
1 CS Current sense pin to detect the inductor current for current mode control and over current protection
2 VNEG Negative supply voltage (−10 V to −60 V)
3 BYPASS +1.5-V bandgap reference. Decouple with 0.1 mF capacitor.
4 COMP Compensation node to stabilize the converter
5 VOUT Output voltage feedback connected to the PWM summing comparator
6 GND Low impedance system ground
Internally generated supply voltage for the internal circuit and MOSFET drive circuit. Decouple with an external
7 VCC
bypass capacitor.
8 LX Inductor connection node
DETAILED DESCRIPTION
Start-Up the UVLO threshold. For the recommended frequency
compensation components (see Typical Application Circuit)
The UVLO circuit prevents the internal circuits from turning on the soft-start time is approximately 10 ms.
if VCC is less than 7.6 V (typical) above the negative supply Oscillator
voltage at VNEG pin. With a typical hysteresis of 0.6 V, the
controller is continuously powered on until the VCC voltage The oscillator is designed to operate at a nominal frequency
drops below 7.0 V. This hysteresis prevents the converter of 95 kHz with no external components. The 95-kHz operating
from oscillating during the start-up phase and unintentionally frequency allows the converter to operate in PWM mode
locking up the system. Once (VCC − VNEG) exceeds the UVLO during the full load condition even though the duty cycle is very
threshold the internal reference, oscillator, and soft-start low. The 95kHz switching frequency also allows the converter
circuits are enabled. to operate at optimal efficiency without a large output inductor
and capacitor.
Soft-Start
PWM Mode and Current Limit
The Si9121 has an on-chip soft-start circuit which utilizes the The Si9121 is a current-mode converter designed to operate
error amplifier external compensation network to ramp the in PWM mode. It features pulse-by-pulse peak current limiting
output NMOS transistor current limit which, in turn, allows the such that when the peak current sensed voltage on the CS pin
output voltage to rise gradually without excessive overshoot. is greater than 0.67 V the switch is turned off for the remainder
The soft-start circuit is enable once the VCC voltage exceeds of the clock cycle.
DETAILED DESCRIPTION
Thermal Shutdown
MOSFET Switch
The Si9121 also includes thermal shutdown which shuts down
the device when junction temperature exceeds 170_C due to The low-side n-channel MOSFET switch is integrated to
over heating. In thermal shutdown once the die temperature provide optimum performance and to minimize the overall
cools to below 145_C the regulator is enabled. If the die converter size. The typical 1.5-W rDS(on) of the MOSFET
temperature is excessive due to high package power allows the converter to deliver up to 2 W of output power.
GND
L1
68 mH 220 mF 0.1 mF*
C2 C3
+
6 8 VOUT
GND LX +5 V/400 mA
3 5 10MQ100N or
BYPASS VOUT +3.3 V/400 mA
7 4
VCC COMP
2 1
VNEG CS R2
+ 75 kW
33 mF 0.1 mF 0.1 mF 1 mF 180 pF (27 kW for Si9121DY-3)
80 V C5* C1 C6 Si9121DY-5 R1 C7
C4 or 0.25 W +
1/ W
Si9121DY-3 2 0.1 mF
C8
VNEG
T1
GND GND
68 mH Ns C7
C1 + Np C8*
220 mF 0.1 mF
33 mF
10 V +
80 V C2*
0.1 mF
D2
BAS21
D1 +VOUT
1 8 10MQ100N
CS COIL
2 7
VNEG VCC +5 V
3 6 @ 400 mA
BYPASS GND
4 5
COMP VOUT
C5
R1 C6
0.1 mF Si9121DY-5
0.25 C3 C4 1 mF
1/ W 0.1 mF 180 pF
2
R2
75 kW *Optional
(27 kW for Si9121DY-3)
−VIN
−10 to −60 V
FIGURE 2. Si9121 Application with External Vcc Through Winding
8 7 6 5
E H
1 2 3 4
D h x 45
C
0.25 mm (Gage Plane)
A
All Leads
q 0.101 mm
e B A1 L
0.004"
MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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