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8-Ch/Dual 4-Ch CMOS Analog Multiplexers

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0% found this document useful (0 votes)
17 views11 pages

8-Ch/Dual 4-Ch CMOS Analog Multiplexers

Uploaded by

AnhTam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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DG408/409

Vishay Siliconix

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

FEATURES BENEFITS APPLICATIONS


D Low On-Resistance—rDS(on): 100  D Reduced Switching Errors D Data Acquisition Systems
D Low Charge Injection—Q: 20 pC D Reduced Glitching D Audio Signal Routing
D Fast Transition Time—tTRANS: 160 ns D Improved Data Throughput D ATE Systems
D Low Power—ISUPPLY: 10 A D Reduced Power Consumption D Battery Powered Systems
D Single Supply Capability D Increased Ruggedness D High Rel Systems
D 44-V Supply Max Rating D Wide Supply Ranges ("5 V to "20 V) D Single Supply Systems
D TTL Compatible Logic D Medical Instrumentation

DESCRIPTION
The DG408 is an 8-channel single-ended analog multiplexer Applications for the DG408/409 include high speed data
designed to connect one of eight inputs to a common output acquisition, audio signal switching and routing, ATE systems,
as determined by a 3-bit binary address (A0, A1, A2). The and avionics. High performance and low power dissipation
DG409 is a dual 4-channel differential analog multiplexer make them ideal for battery operated and remote
designed to connect one of four differential inputs to a common instrumentation applications.
dual output as determined by its 2-bit binary address (A0, A1).
Break-before-make switching action protects against
momentary crosstalk between adjacent channels.
Designed in the 44-V silicon-gate CMOS process, the
absolute maximum voltage rating is extended to 44 V.
An on channel conducts current equally well in both directions. Additionally, single supply operation is also allowed. An
In the off state each channel blocks voltages up to the power epitaxial layer prevents latchup.
supply rails. An enable (EN) function allows the user to reset
the multiplexer/demultiplexer to all switches off for stacking
several devices. All control inputs, address (Ax) and enable
(EN) are TTL compatible over the full specified operating For additional information please see Technical Article TA201
temperature range. (FaxBack Number 70600).

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG408 Dual-In-Line DG409 Dual-In-Line


SOIC and TSSOP SOIC and TSSOP

A0 A1 A0 A1
1 16 1 16
EN Decoders/Drivers A2 EN GND
2 15 2 Decoders/Drivers 15
V- GND V- V+
3 14 3 14
S1 V+ S1a S1b
4 13 4 13
S2 S5 S2a S2b
5 12 5 12
S3 S6 S3a S3b
6 11 6 11
S4 S7 S4a S4b
7 10 7 10
D S8 Da Db
8 9 8 9

Top View Top View

Document Number: 70062 www.vishay.com


S-03081—Rev. F, 27-Jan-03 1
DG408/409
Vishay Siliconix

TRUTH TABLES AND ORDERING INFORMATION

TRUTH TABLE  DG408 TRUTH TABLE  DG409


A2 A1 A0 EN On Switch A1 A0 EN On Switch
X X X 0 None X X 0 None
0 0 0 1 1 0 0 1 1
0 0 1 1 2 0 1 1 2
0 1 0 1 3 1 0 1 3
0 1 1 1 4 1 1 1 4
1 0 0 1 5
1 0 1 1 6 Logic “0” = VAL v 0.8 V
Logic “1” = VAH w 2.4 V
1 1 0 1 7 X = Don’t Care
1 1 1 1 8

ORDERING INFORMATION  DG408 ORDERING INFORMATION  DG409


Temp Range Package Part Number Temp Range Package Part Number
16-Pin Plastic DIP DG408DJ 16-Pin Plastic DIP DG409DJ

-40 to 85_C 16-Pin SOIC DG408DY -40 to 85_C 16-Pin SOIC DG409DY

16-Pin TSSOP DG408DQ 16-Pin TSSOP DG409DQ

DG408AK DG409AK

16-Pin CerDIP DG408AK/883 16-Pin CerDIP DG409AK/883


_
-55 to 125_C _
-55 to 125_C
5962-9204201MEA 5962-9204202MEA

LCC-20* 5962-9204201M2A LCC-20* 5962-9204202M2A

*Block Diagram and Pin Configuration not shown.

ABSOLUTE MAXIMUM RATINGS


Voltage Referenced to V- 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V LCC-20f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mW
Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or
20 mA, whichever occurs first Notes
Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal
Peak Current, S or D diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
c. Derate 6 mW/_C above 75_C.
Storage Temperature (AK Suffix) . . . . . . . . . . . . . . . . . . . -65 to 150_C d. Derate 7.6 mW/_C above 75_C.
(DJ, DY Suffix) . . . . . . . . . . . . . . . -65 to 125_C e. Derate 12 mW/_C above 75_C.
Power Dissipation (Package)b f. Derate 10 mW/_C above 75_C.
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW

www.vishay.com Document Number: 70062


2 S-03081—Rev. F, 27-Jan-03
DG408/409
Vishay Siliconix

SPECIFICATIONSa
Test Conditions A Suffix D Suffix
Unless Otherwise Specified -55 to 125_C -40 to 85_C
V+ = 15 V, V- = -15 V
Parameter Symbol VAL = 0.8 V, VAH = 2.4 Vf Tempb Typc Mind Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee VANALOG Full -15 15 -15 15 V
Room 40 100 100
Drain-Source On-Resistance rDS(on) VD = "10 V, IS = -10 mA 
Full 125 125
rDS(on) Matching Between
rDS(on) VD = "10 V Room 15 15 %
Channelsg
Source Off VS = "10 V, VD = #10 V Room -0.5 0.5 -0.5 0.5
IS(off)
Leakage Current VEN = 0 V Full -50 50 -5 5
Room -1 1 -1 1
VD = "10 V DG408
Full -100 100 -20 20
Drain Off Leakage Current ID(off) VS = #10
# V
VEN = 0 V Room -1 1 -1 1
DG409 nA
Full -50 50 -10 10
Room -1 1 -1 1
VS = VD = "10 V DG408
Full -100 100 -20 20
Drain On Leakage Current ID(on) Sequence Each
Switch On Room -1 1 -1 1
DG409
Full -50 50 -10 10

Digital Control
Logic High Input Voltage VINH Full 2.4 2.4
V
Logic Low Input Voltage VINL Full 0.8 0.8
Logic High Input Current IAH VA = 2.4 V, 15 V Full -10 10 -10 10

A
Logic Low Input Current IAL VEN = 0 V, 2.4 V, VA = 0 V Full -10 10 -10 10
Logic Input Capacitance Cin f = 1 MHz Room 8 pF

Dynamic Characteristics
Transition Time tTRANS See Figure 2 Full 160 250 250
Break-Before-Make Interval tOPEN See Figure 4 Room 10 10
Room 115 150 150 ns
Enable Turn-On Time tON(EN)
See Figure 3 Full 225
Enable Turn-Off Time tOFF(EN) Room 105 150 150
Charge Injection Q CL = 10 nF, VS = 0 V Room 20 pC
VEN = 0 V, RL = 1 k
Off Isolationh OIRR Room -75 dB
f = 100 kHz
Source Off Capacitance CS(off) VEN = 0 V, VS = 0 V, f = 1 MHz Room 3
DG408 Room 26
Drain Off Capacitance CD(off)
VEN = 0 V, VD = 0 V DG409 Room 14 pF
f = 1 MHz DG408 Room 37
Drain On Capacitance CD(on)
DG409 Room 25

Power Supplies
Positive Supply Current I+ Full 10 75 75
VEN = VA = 0 V or 5 V 
A
Negative Supply Current I- Full 1 -75 -75
Room 0.2 0.5 0.5
Positive Supply Current I+ mA
VEN = 2.4 V, VA = 0 V Full 2 2
Negative Supply Current I- Full -500 -500 A

Document Number: 70062 www.vishay.com


S-03081—Rev. F, 27-Jan-03 3
DG408/409
Vishay Siliconix

SPECIFICATIONSa FOR SINGLE SUPPLY


Test Conditions A Suffix D Suffix
Unless Otherwise Specified -55 to 125_C -40 to 85_C

V+ = 12 V, V- = 0 V
Parameter Symbol VAL = 0.8 V, VAH = 2.4 Vf Tempb Typc Mind Maxd Mind Maxd Unit

Analog Switch
Drain-Source
rDS(on) VD = 3 V, 10 V, IS = - 1 mA Room 90 
On-Resistancee, f

Dynamic Characteristics
Switching Time of Multiplexere tTRANS VS1 = 8 V, VS8 = 0 V, VIN = 2.4 V Room 180

Enable Turn On Timee tON(EN) Room 180 ns


VINH = 2.4 V, VINL = 0 V
Enable Turn Off Timee tOFF(EN) VS1 = 5 V Room 120

Charge Injectione Q CL = 1 nF, VS= 6 V, RS = 0 Room 5 pC

Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. rDS(on) = rDS(on) Max - rDS(on) Min.
h. Worst case isolation occurs on Channel 4 do to proximity to the drain pin.

www.vishay.com Document Number: 70062


4 S-03081—Rev. F, 27-Jan-03
DG408/409
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Drain Leakage Current vs. Source/Drain Voltage


Source/Drain Capacitance vs. Analog Voltage (Single 12-V Supply)
80 60
V+ = 15 V VS = 0 V for ID(off)
V- = -15 V VS = VD for ID(on)
40
60
CD(on) DG408 ID(off)
20 DG409 ID(off)
C S, D (pF)

CD(off) DG409 ID(on)

I D (pA)
40 0

-20
20 DG408 ID(on)
CS(off)
-40

0 -60
-15 -10 -5 0 5 10 15 0 2 4 6 8 10 12
VANALOG - Analog Voltage (V) VD - Drain Voltage (V)

Drain Leakage Current vs. Source/DrainVoltage Source Leakage Current vs. Source Voltage
100 20
V+ = 15 V
V- = -15 V
60 VS = -VD for ID(off) 15
VD = VS(open) for ID(on)
V+ = 15 V
20 10 V- = -15 V
DG409 ID(off)
I D (pA)

IS(off) (pA)

-20 5

-60 DG409 ID(on) 0

V+ = 12 V
-100 DG408 ID(on), ID(off) -5 V- = 0 V

-140 -10
-15 -10 -5 0 5 10 15 -15 -10 -5 0 5 10 15
VD or VS — Drain or Source Voltage (V) VS - Source Voltage (V)

Input Switching Threshold vs. Supply Voltage Negative Supply Current vs. Switching Frequency

ÉÉÉÉÉÉÉÉÉÉÉÉ
2.0 -100 mA
VSUPPLY = "15 V

1.5 ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
-10 mA

ÉÉÉÉÉÉÉÉÉÉÉÉ
-1 mA

ÉÉÉÉÉÉÉÉÉÉÉÉ
VEN = 2.4 V
V TH (V)

1.0 -100 A

ÉÉÉÉÉÉÉÉÉÉÉÉ
I-

-10 A

0.5 VEN = 0 V or 5 V
-1 A

0.0 -0.1 A
4 8 12 16 20 100 1k 10 k 100 k 1M 10 M
+VSUPPLY (V) Switching Frequency (Hz)

Document Number: 70062 www.vishay.com


S-03081—Rev. F, 27-Jan-03 5
DG408/409
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Positive Supply Current vs. Switching Frequency ISUPPLY vs. Temperature


100 mA 100 mA
VSUPPLY = "15 V
10 mA I+

10 mA
1 mA

I+, I-
VEN = 2.4 V 100 nA
I+

1 mA
10 nA

100 A 1 nA
-(I-) VSUPPLY = "15 V
VEN = 0 V or 5 V VA = 0 V
100 pA VEN = 0 V

10 A 10 pA
100 1k 10 k 100 k 1M 10 M -55 -35 -15 5 25 45 65 85 105 125
Switching Frequency (Hz) Temperature (_C)

Positive Supply Current vs. Temperature (DG408) Charge Injection vs. Analog Voltage
90
CL = 10,000 pF
20 80 VIN = 5 Vp-p
70

60
15
50 V+ = 15 V
I+ (  A)

Q (pC)

V- = -15 V
V+ = 15 V 40
10 V- = -15 V
VIN = 0 V 30
VEN = 0 V
20
5 10
V+ = 12 V
0
V- = 0 V
0 -10
-55 -35 -15 5 25 45 65 85 105 125 -15 -10 -5 0 5 10 15
Temperature (_C) VS - Source Voltage (V)

rDS(on) vs. VD and Supply rDS(on) vs. VD and Supply (Single Supply)
120 160

140
100 V+ = 7.5 V
"5 V
120

80
100 10 V
r DS(on) (  )

r DS(on) (  )

"8 V
80 12 V
60 "10 V
"12 V 15 V 20 V
60
40
40 22 V
"20 V V- = 0 V
20 "15 V
20

0 0
-20 -16 -12 -8 -4 0 4 8 12 16 20 0 4 8 12 16 20 22

VD - Drain Voltage (V) VD - Drain Voltage (V)

www.vishay.com Document Number: 70062


6 S-03081—Rev. F, 27-Jan-03
DG408/409
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

rDS(on) vs. VS and Temperature rDS(on) vs. VS and Temperature (Single Supply)
80 130
V+ = 15 V 125_C
70 V- = -15 V
110
85_C
60
125_C
90
r DS(on) (  )

r DS(on) (  )
50 85_C
25_C
40 25_C 70
0_C
30 -40 _C
50
20 0_C -55 _C
-55 _C
-40 _C 30 V+ = 12 V
10
V- = 0 V
0 10
-15 -10 -5 0 5 10 15 0 2 4 6 8 10 12
VS - Source Voltage (V) VS - Source Voltage (V)

Off Isolation and Crosstalk vs. Frequency Insertion Loss vs. Frequency
-150 1
V+ = 15 V RL = 1 k
V- = -15 V 0
-130 RL = 1 k
-1 V+ = 15 V
V- = -15 V
-1 10 Ref. 1 Vrms
LOSS (dB)

-2
(dB)

-90
Off-Isolation -3

-70
-4
Crosstalk
-50 RL = 50 
-5

-30 -6
100 1k 10 k 100 k 1M 10 M 100 M 10 100 1k 10 k 100 k 1M 10 M 100 M

f - Frequency (Hz) f - Frequency (Hz)

Switching Time vs. Bipolar Supply Switching Time vs. Single Supply
200 275

tTRANS
250
175

225

150
200
t (ns)

t (ns)

tTRANS

125 175
tOFF(EN)
tOFF(EN) 150
100 tON(EN)
tON(EN) 125

75 100
"10 "12 "14 "16 "18 "20 "22 8 9 10 11 12 13 14 15
VSUPPLY (V) VSUPPLY (V)

Document Number: 70062 www.vishay.com


S-03081—Rev. F, 27-Jan-03 7
DG408/409
Vishay Siliconix

SCHEMATIC DIAGRAM (TYPICAL CHANNEL)

V+

GND VREF

A0

V+
Level Decode/ V-
AX Shift Drive

S1
V+

EN

Sn
V-

FIGURE 1.

TEST CIRCUITS

+15 V

V+
A2 S1 "10 V
A1
S2 - S7
A0
DG408 S8 #10 V tr <20 ns
3V tf <20 ns
EN D VO Logic
GND V- Input 50%
35 pF 0V
50  300 
-15 V
VS1
Switch 90%
Output
VO 0V

+15 V 90%
VS8
V+
A1 S1 "10 V tTRANS tTRANS
A0 S1 ON S8 ON
S1a - S4a, Da

DG409 S4b #10 V

EN Db VO
GND V-
35 pF
50  300 
-15 V

FIGURE 2. Transition Time

www.vishay.com Document Number: 70062


8 S-03081—Rev. F, 27-Jan-03
DG408/409
Vishay Siliconix

TEST CIRCUITS

+15 V

V+
S1 -5V
EN
S2 - S8
A0
DG408
A1 tr <20 ns
A2 Logic 3V tf <20 ns
D VO Input 50%
GND V-
50  0V
1 k 35 pF
tON(EN) tOFF(EN)
-15 V
0V
10%

Switch
Output
+15 V
VO
90%
VO
V+
S1b -5V
EN
S1a - S4a, Da
A0 S2b - S4b

DG409
A1
Db VO
GND V-
50  35 pF
1 k
-15 V

FIGURE 3. Enable Switching Time

+15 V

tr <20 ns
V+
+2.4 V EN Logic 3V tf <20 ns
Input 50%
All S and Da +5 V
0V
A0
A1 DG408
DG409
A2 Db, D VO VS
GND V- 80%
Switch
Output
50  -15 V 300  35 pF
VO tOPEN
0V

FIGURE 4. Break-Before-Make Interval

Document Number: 70062 www.vishay.com


S-03081—Rev. F, 27-Jan-03 9
DG408/409
Vishay Siliconix

TEST CIRCUITS

+15 V

Rg V+
3V
SX Logic
OFF ON OFF
EN Input
0V
A0 D VO
Channel A1
Select CL VO
A2 Switch
10 nF Output
GND V-
VO is the measured voltage due to charge transfer
error Q, when the channel turns off.
-15 V Q = CL x VO

FIGURE 5. Charge Injection

+15 V
+15 V
VIN V+
VIN S1
V+
SX SX
VS VS
Rg = 50  S8 S8
A0 D VO A0 D VO
A1 Rg = 50  A1
A2 RL A2 RL
GND EN V- 1 k 1 k
GND EN V-

-15 V -15 V
VOUT VOUT
Off Isolation = 20 log Crosstalk = 20 log
VIN VIN

FIGURE 6. Off Isolation FIGURE 7. Crosstalk

+15 V +15 V

VS V+ V+
S1 S1
Rg = 50  Meter
A2
HP4192A
A0 D Channel A1 S8
VO Impedance
Select
A1 Analyzer
A0 or Equivalent
A2 RL
1 k D
GND EN V- GND EN V- f = 1 MHz

-15 V -15 V
VOUT
Insertion Loss = 20 log
VIN

FIGURE 8. Insertion Loss FIGURE 9. Source Drain Capacitance

www.vishay.com Document Number: 70062


10 S-03081—Rev. F, 27-Jan-03
DG408/409
Vishay Siliconix

APPLICATION HINTS

Overvoltage Protection

A very convenient form of overvoltage protection consists of supply of the IC. From the point of view of the chip, nothing has
adding two small signal diodes (1N4148, 1N914 type) in series changed, as long as the difference VS - (V-) doesn’t exceed
with the supply pins (see Figure 10). This arrangement +44 V. The addition of these diodes will reduce the analog
effectively blocks the flow of reverse currents. It also floats the signal range to 1 V below V+ and 1 V above V-, but it
supply pin above or below the normal V+ or V- value. In this preserves the low channel resistance and low leakage
case the overvoltage signal actually becomes the power characteristics.
V+

1N4148

SX
D
Vg

DG408

1N4148

V-

FIGURE 10. Overvoltage Protection Using Blocking Diodes

8-Channel Sequential Multiplexer/Demultiplexer Differential 4-Channel Sequential Multiplexer/Demultiplexer

+15 V -15 V +15 V -15 V

V+ GND V- V+ GND V-
S1a
S1
S2a
S2 Analog
Output S3a Da
S3 Differential
(Input) S4a
Analog S4 Analog Differential
DG408 D Analog
Inputs Inputs DG409
S5 Outputs
(Outputs) (Outputs) S1b
S6 (Inputs)
S2b Db
S7
S3b
S8
S4b
A0 A1 A2 EN
+15 V A0 A1 EN
+15 V

DM7493 QB
Clock
In BIN QC
QD J Q J Q
AIN 1/2 MM74C73 1/2 MM74C73
NC QA NC Clock
r01 r02 GND In CLK CLK

K Q NC K Q NC

+15 V CLEAR GND CLEAR


6
Enable In Reset Enable
(MUX On-Off Control)

FIGURE 11.

Document Number: 70062 www.vishay.com


S-03081—Rev. F, 27-Jan-03 11

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