DG211B/DG212B

Vishay Siliconix

Improved Quad CMOS Analog Switches

DESCRIPTION FEATURES
The DG211B/212B analog switches are highly improved • ± 22 V supply voltage rating
versions of the industry-standard DG211/212. These • TTL and CMOS compatible logic Pb-free
Available
devices are fabricated in Vishay Siliconix’ proprietary silicon • Low on-resistance - rDS(on): 50 Ω
gate CMOS process, resulting in lower on-resistance, lower RoHS*
• Low leakage - ID(on): 20 pA COMPLIANT
leakage, higher speed, and lower power consumption.
• Single supply operation possible
These quad single-pole single-throw switches are designed • Extended temperature range
for a wide variety of applications in telecommunications, • Fast switching - tON: 120 ns
instrumentation, process control, computer peripherals, etc. • Low charge injection - Q: 1 pC
An improved charge injection compensation design
minimizes switching transients. The DG211B and DG212B BENEFITS
can handle up to ± 22 V, and have an improved continuous • Wide analog signal range
current rating of 30 mA. An epitaxial layer prevents latchup.
• Simple logic interface
All devices feature true bi-directional performance in the on • Higher accuracy
condition, and will block signals to the supply levels in the off • Minimum transients
condition. • Reduced power consumption
• Superior to DG211/212
The DG211B is a normally closed switch and the DG212B is
a normally open switch. (See Truth Table.)
• Space savings (TSSOP)

APPLICATIONS
• Industrial instrumentation
• Test equipment
• Communications systems
• Disk drives
• Computer peripherals
• Portable instruments
• Sample-and-hold circuits

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG211B
Dual-In-Line, SOIC and TSSOP

IN1 1 16 IN2
TRUTH TABLE
D1 2 15 D2
Logic DG211B DG212B
S1 3 14 S2 0 ON OFF

V- V+ 1 OFF ON
4 13
Logic "0" ≤ 0.8 V
GND VL
5 12 Logic "1" ≥ 2.4 V
S4 6 11 S3

D4 7 10 D3

IN4 8 9 IN3

Top View

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 70040 www.vishay.com

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DG211B/DG212B
Vishay Siliconix

ORDERING INFORMATION
Temp. Range Package Standard Part Number Lead (Pb)-free Part Number
DG211BDJ DG211BDJ-E3
16-Pin Plastic DIP
DG212BDJ DG212BDJ-E3
DG211BDY DG211BDY-E3
DG211BDY-T1 DG211BDY-T1-E3
16-Pin Narrow SOIC
DG212BDY DG212BDY-E3
- 40 °C to 85 °C
DG212BDY-T1 DG212BDY-T1-E3
DG211BDQ DG211BDQ-E3
DG211BDQ-T1 DG211BDQ-T1-E3
16-Pin TSSOP
DG212BDQ DG212BDQ-E3
DG212BDQ-T1 DG212BDQ-T1-E3

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Limit Unit
Voltages Referenced, V+ to V- 44
GND 25
V
(V-) - 2 to (V+) + 2
Digital Inputsa, VS, VD
or 30 mA, whichever occurs first
Current, Any Terminal 30
mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature - 65 to 125 °C
16-Pin Plastic DIPc 470
Power Dissipation (Package)b mW
16-Pin Narrow SOIC and TSSOPd 640
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.

SCHEMATIC DIAGRAM Typical Channel

V+

SX
VL

Level V-
Shift/
Drive V+
INX
DX

GND

V-

Figure 1.

www.vishay.com Document Number: 70040

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 DG211B/DG212B
Vishay Siliconix

SPECIFICATIONS
Test Conditions D Suffix
Unless Otherwise Specified - 40 °C to 85 °C
V+ = 15 V, V- = - 15 V
Parameter Symbol VL = 5 V, VIN = 2.4 V, 0.8 Ve Temp.a Min.b Typ.c Max.b Unit
Analog Switch
Analog Signal Ranged VANALOG Full - 15 15 V
Drain-Source Room 45 85
rDS(on)
On-Resistance VD = ± 10 V, IS = 1 mA Full 100 Ω
rDS(on) Match ΔrDS(on) Room 2
Room - 0.5 ± 0.01 0.5
Source Off Leakage Current IS(off) VS = ± 14 V, VD = ± 14 V
Full -5 5
Room - 0.5 ± 0.01 0.5
Drain Off Leakage Current ID(off) VD = ± 14 V, VS = ± 14 V nA
Full -5 5
Room - 0.5 ± 0.02 0.5
Drain On Leakage Current ID(on) VS = VD = ± 14 V
Full - 10 10
Digital Control
Input Voltage High VINH Full 2.4
V
Input Voltage Low VINL Full 0.8
Input Current IINH or IINL VINH or VINL Full -1 1 µA
Input Capacitance CIN Room 5 pF
Dynamic Characteristics
Turn-On Time tON VS = 10 V Room 300
ns
Turn-Off Time tOFF See Figure 2 Room 200
Charge Injection Q CL = 1000 pF, Vgen = 0 V, Rgen = 0 Ω Room 1 pC
Source-Off Capacitance CS(off) Room 5
VS = 0 V, f = 1 MHz
Drain-Off Capacitance CD(off) Room 5 pF
Channel-On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room 16
Off Isolation OIRR CL = 15 pF, RL = 50 Ω, Room 90
dB
Channel-to-Channel Crosstalk XTALK VS = 1 VRMS, f = 100 kHz Room 95
Power Supply
Room 10
Positive Supply Current I+
Full 50
VIN = 0 or 5 V
Room - 10
Negative Supply Current I- µA
Full - 50
Room 10
Logic Supply Current IL
Full 50
Power Supply Range for V
VOP Full ± 4.5 ± 22
Continuous Operation

Document Number: 70040 www.vishay.com

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DG211B/DG212B
Vishay Siliconix

SPECIFICATIONS for Single Supply

Test Conditions D Suffix
Unless Otherwise Specified - 40 °C to 85 °C
V+ = 12 V, V- = 0 V
Parameter Symbol VL = 5 V, VIN = 2.4 V, 0.8 Ve Temp.a Min.b Typ.c Max.b Unit
Analog Switch
Analog Signal Ranged VANALOG Full 0 12 V
Drain-Source Room 90 160
rDS(on) VD = 3 V, 8 V, IS = 1 mA Ω
On-Resistance Full 200
Dynamic Characteristics
Turn-On Time tON VS = 8 V Room 300
ns
Turn-Off Time tOFF See Figure 1 Room 200
Charge Injection Q CL = 1 nF, Vgen = 6 V, Rgen = 0 Ω Room 4 pC
Power Supply
Room 10
Positive Supply Current I+
Full 50
VIN = 0 or 5 V
Room - 10
Negative Supply Current I- µA
Full - 50
Room 10
Logic Supply Current IL
Full 50
Power Supply Range for V
VOP Full + 4.5 + 25
Continuous Operation

Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

110 100
V+ = 15 V
100
r DS(on) - Drain-Source On-Resistance (Ω)

90 V- = - 15 V
r DS(on) - Drain-Source On-Resistance (Ω)

90 80
±5V
80 70

70 60 125 °C
60 ± 10 V 85 °C
50

50 ± 15 V 40 25 °C

40 30 - 55 °C
± 20 V
30 20
20 10

10 0
- 20 - 16 - 12 -8 -4 0 4 8 12 16 20 - 15 - 10 -5 0 5 10 15
VD - Drain Voltage (V) VD - Drain V oltage (V)
rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature

www.vishay.com Document Number: 70040

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 DG211B/DG212B
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

250 40
V+ = 22 V
r DS(on) - Drain-Source On-Resistance (Ω)

225 V+ = 5 V V- = - 22 V
30
TA = 25 °C
200
20
175 ID(on)

I S, I D - Current (pA)
10
150
7V
125 IS(off), ID(off)
0
10 V
100 12 V - 10
75 15 V
- 20
50
- 30
25

0 - 40
0 2 4 6 8 10 12 14 16 - 20 - 15 - 10 -5 0 5 10 15 20
VD - Drain V oltage (V) VANALOG - Analog V oltage (V)
rDS(on) vs. VD and Single Power Supply Voltages Leakage Currents vs. Analog Voltage

30
1 nA
V+ = 15 V
V- = - 15 V
VS, VD = ± 14 V 20

10
Q - Charge (pC)

100 pA
I S, ID - Current

V+ = 15 V
0 V- = - 15 V
V+ = 12 V
IS(off), ID(off) V- = 0 V
- 10
10 pA

- 20

- 30
1 pA
- 15 - 10 -5 0 5 10 15
- 55 - 35 - 15 5 25 45 65 85 105 125
VANALOG - Analog Voltage (V)
Temperature (°C)
Leakage Current vs. Temperature QS, QD - Charge Injection vs. Analog Voltage

120
V+ = + 15 V
110 V- = - 15 V

100

90
OIRR (dB)

RL = 50 Ω
80

70

60

50

40
10 k 100 k 1M 10 M
f - Frequency (Hz)
Off Isolation vs. Frequency

Document Number: 70040 www.vishay.com

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Vishay Siliconix
TEST CIRCUITS

+ 15 V

V+ 3V
Logic 50 % tr < 20 ns
S D Input tf < 20 ns
VS = + 2 V VO 0V

IN tOFF
3V RL CL
V- 1 kΩ 35 pF
GND 90 %
Switch
VO
Output
- 15 V tON
RL
VO = VS
RL + rDS(on)
Figure 2. Switching Time

+ 15 V
C + 15 V
C

V+
V+ VS S1 D1
VS S D VO
Rg = 50 Ω
Rg = 50 Ω 50 Ω
IN1
RL 0 V, 2.4 V
IN
0V, 2.4 V VO
S2 D2
NC
GND V- C
RL
IN2
0 V, 2.4 V
- 15 V GND V- C
VS C = RF bypass
Off Isolation = 20 log VS
VO X TALK Isolation = 20 log
VO - 15 V

Figure 3. Off Isolation Figure 4. Channel-to-Channel Crosstalk

+ 15 V ΔVO
VO
V+
Rg
S D
VO

Vg IN CL INX ON OFF ON
3V 1000 pF
GND V-
ΔVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x ΔV O
- 15 V

Figure 5. Charge Injection

www.vishay.com Document Number: 70040

6 S-80263-Rev. I, 11-Feb-08
 DG211B/DG212B
Vishay Siliconix
APPLICATIONS

+5V + 15 V

VL V+

Logic Input
Low = Sample
High = Hold

1 kΩ + 15 V
+ 15 V DG211B
- 15 V
– J202
LM101A
2N4400
VIN + 5 MΩ
50 pF 200 W
VOUT
5.1 MΩ 1000 pF J507
V-
J500
30 pF
- 15 V
Aquisition Time = 25 µs - 15 V
Aperature Time = 1 µs
Sample to Hold Offset = 5 mV
Droop Rate = 5 mV/s
Figure 6. Sample-and-Hold

+ 15 V
160
V1
C4

fC4 150 pF 120

Select
C3

fC3 1500 pF
Voltage Gain - dB

80
Select
TTL C2
Control
fC2 0.015 µF fC1 fC2 fC3 fC4
Select 40
C1

fC1 0.15 µF
Select 0 fL1 fL2 fL3 fL4

DG211B
V- GND
- 40
1 10 100 1k 10 k 100 k 1M
- 15 V Frequency - Hz
R3 = 1 MΩ

+ 15 V
R3
- 15 V AL (Voltage Gain Below Break Frequency) = = 100 (40 dB)
– R1
VOUT 1
R1 = 10 kΩ fC (Break Frequency) =
LM101A 2πR3CX
1
+ fL (Unity Gain Frequency) =
2πR1CX
rDS(on)
R2 = 10 kΩ 30 pF Max Attenuation = ≈ - 47 dB
10 kΩ

Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency

Document Number: 70040 www.vishay.com

S-80263-Rev. I, 11-Feb-08 7
DG211B/DG212B
Vishay Siliconix
APPLICATIONS

+5V + 15 V 30 pF

VL V+ + 15 V
VIN1
+
LM101A
VIN2 - + 15 V
DG419 RF1 RF2 RF3
18 kΩ 9.9 kΩ 100 kΩ
- 15 V DG212B
CH
GND V-

- 15 V
RG1 RG2 RG3
Gain 1 (x1) 2 kΩ 100 Ω 100 Ω
RF + RG
Gain = Gain 2 (x10)
RG
Gain 3 (x100)
Gain 4 (x1000)
V- GND
Logic High = Switch On

- 15 V

Figure 8. A Precision Amplifier with Digitally Programable Input and Gains

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70040.

www.vishay.com Document Number: 70040

8 S-80263-Rev. I, 11-Feb-08
 Package Information
Vishay Siliconix

SOIC (NARROW): 16ĆLEAD

JEDEC Part Number: MS-012

MILLIMETERS INCHES
Dim Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.38 0.51 0.015 0.020
C 0.18 0.23 0.007 0.009
D 9.80 10.00 0.385 0.393
E 3.80 4.00 0.149 0.157
16 15 14 13 12 11 10 9 e 1.27 BSC 0.050 BSC

E H 5.80 6.20 0.228 0.244

L 0.50 0.93 0.020 0.037
1 2 3 4 5 6 7 8
Ĭ 0_ 8_ 0_ 8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300

D H
C

All Leads
0.101 mm
A1 Ĭ
e B L
0.004 IN

Document Number: 71194 www.vishay.com

02-Jul-01 1
 Package Information
Vishay Siliconix

PDIP: 16ĆLEAD

16 15 14 13 12 11 10 9

E1 E

1 2 3 4 5 6 7 8

D
S
Q1

A1 L

15°
C MAX
B1 e1 B eA

MILLIMETERS INCHES
Dim Min Max Min Max
A 3.81 5.08 0.150 0.200
A1 0.38 1.27 0.015 0.050
B 0.38 0.51 0.015 0.020
B1 0.89 1.65 0.035 0.065
C 0.20 0.30 0.008 0.012
D 18.93 21.33 0.745 0.840
E 7.62 8.26 0.300 0.325
E1 5.59 7.11 0.220 0.280
e1 2.29 2.79 0.090 0.110
eA 7.37 7.87 0.290 0.310
L 2.79 3.81 0.110 0.150
Q1 1.27 2.03 0.050 0.080
S 0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482

Document Number: 71261 www.vishay.com

06-Jul-01 1
 Package Information
Vishay Siliconix

TSSOP: 16-LEAD

DIMENSIONS IN MILLIMETERS
Symbols Min Nom Max
A - 1.10 1.20
A1 0.05 0.10 0.15
A2 - 1.00 1.05
B 0.22 0.28 0.38
C - 0.127 -
D 4.90 5.00 5.10
E 6.10 6.40 6.70
E1 4.30 4.40 4.50
e - 0.65 -
L 0.50 0.60 0.70
L1 0.90 1.00 1.10
y - - 0.10
θ1 0° 3° 6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624

Document Number: 74417 www.vishay.com

23-Oct-06 1
 PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16

0.193
(4.90)

0.055
(1.40)
0.281

0.171
(7.15)

(4.35)
0.014 0.026 0.012
(0.35) (0.65) (0.30)

Recommended Minimum Pads

Dimensions in inches (mm)

Revision: 02-Sep-11 1 Document Number: 63550

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-16

RECOMMENDED MINIMUM PADS FOR SO-16

0.372
(9.449)

0.047
(1.194)
(6.248)

(3.861)
0.246

0.152
0.022 0.050 0.028
(0.559) (1.270) (0.711)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72608

24 Revision: 21-Jan-08
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Revision: 01-Jul-2024 1 Document Number: 91000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000