13005
NPN Silicon Power Transistors
for high-voltage, high-speed power switching
applications.
TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Symbol Value Unit
Collector Base Voltage VCBO 700 V
Collector Emitter Voltage VCEO 400 V
Emitter Base Voltage VEBO 9 V
Collector Current IC 4 A
Power Dissipation (Ta = 25 OC) Ptot 2 W
Power Dissipation (Tc = 25 OC) Ptot 75 W
Junction Temperature Tj 150 O
C
Storage Temperature Range Tstg - 55 to + 150 O
C
Characteristics at Ta = 25 OC
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 5 V, IC = 1 A hFE 10 - 60 -
at VCE = 5 V, IC = 2 A hFE 8 - 40 -
Collector Base Cutoff Current
ICBO - - 1 mA
at VCB = 700 V
Emitter Base Cutoff Current
IEBO - - 1 mA
at VEB = 9 V
Collector Emitter Breakdown Voltage
V(BR)CEO 400 - - V
at IC = 10 mA
Collector Emitter Saturation Voltage
at IC = 1 A, IB = 0.2 A VCE(sat) - - 0.5 V
at IC = 2 A, IB = 0.5 A VCE(sat) - - 0.6 V
at IC = 4 A, IB = 1 A VCE(sat) - - 1 V
Base Emitter Saturation Voltage
at IC = 1 A, IB = 0.2 A VBE(sat) - - 1.2 V
at IC = 2 A, IB = 0.5 A VBE(sat) - - 1.6 V
Gain Bandwidth Product
fT 4 - - MHz
at VCE = 10 V, IC = 500 mA, f = 1 MHz
Collector Base Capacitance
at VCB = 10 V, f = 0.1 MHz Cob - 65 - pF
SEMTECH ELECTRONICS LTD.
®
Dated : 17/09/2016 Rev:02
13005
SEMTECH ELECTRONICS LTD.
®
Dated : 17/09/2016 Rev:02
13005
TO-220 PACKAGE OUTLINE
SEMTECH ELECTRONICS LTD.
®
Dated : 17/09/2016 Rev:02
