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Semtech: NPN Plastic Power Transistor

This document provides specifications for the ST H1061 plastic power transistor. It lists maximum ratings and characteristics such as current gain, breakdown voltages, and gain bandwidth product at various conditions. It also includes an outline of the TO-220 plastic package used.

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0% found this document useful (0 votes)
64 views3 pages

Semtech: NPN Plastic Power Transistor

This document provides specifications for the ST H1061 plastic power transistor. It lists maximum ratings and characteristics such as current gain, breakdown voltages, and gain bandwidth product at various conditions. It also includes an outline of the TO-220 plastic package used.

Uploaded by

Bravo Mac
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ST H1061

NPN Plastic Power Transistor


Low frequency power amplifier

TO-220 Plastic Package

C H
E
Absolute Maximum Ratings (Ta = 25 OC)

T
Parameter Symbol Value Unit
Collector Emitter Voltage VCEO 50 V

M
Collector Base Voltage VCBO 50 V
Emitter Base Voltage VEBO 4 V

E
Collector Current IC 3 A
Power Dissipation Ptot 25 W

S
Junction Temperature Tj 150 O
C
Storage Temperature Range TS -45 to +150 O
C

SEMTECH ELECTRONICS LTD.


Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/3/2006
ST H1061

Characteristics at Tamb=25 OC
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 4 V, IC = 1 A STH1061A hFE 35 - 70 -
STH1061B hFE 60 - 120 -
STH1061C hFE 100 - 200 -
STH1061D hFE 160 - 320 -
at VCE = 4 V, IC = 0.1 A hFE 35 - - -
Collector Cutoff Current

H
ICBO - - 0.1 mA
at VCB = 20 V
Collector Saturation Voltage
VCE(sat) - - 1 V

C
at IC = 2 A, IB = 0.2 A
Collector Emitter Breakdown Voltage
V(BR)CEO 50

E
at IC = 50 mA - - V
Collector Base Breakdown Voltage
V(BR)CBO 50
at IC = 5 mA - - V

T
Emitter Base Breakdown Voltage
V(BR)EBO 4
at IE = 5 mA - - V

M
Base Emitter Voltage
VBE - - 1.5 V
at IC = 1 A, VCE = 4 V
Gain Bandwidth Product

E
fT - 8 - MHz
at VCE = 4 V, IC = 0.5 A

S
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/3/2006
ST H1061

TO-220 PACKAGE OUTLINE

C H
T E
E M
S
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/3/2006

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