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Silicon Planar Epitaxial Transistor 2SA1204: Galaxy Electrical

This document provides production specifications for the BL Galaxy Electrical 2SA1204 silicon planar epitaxial transistor. It includes maximum ratings, electrical characteristics, typical characteristics curves, package outline dimensions, and soldering footprint for the SOT-89 packaged transistor. The 2SA1204 is suitable for output stages up to 3 watts and has a high DC current gain, with complementary part 2SC2884.

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58 views4 pages

Silicon Planar Epitaxial Transistor 2SA1204: Galaxy Electrical

This document provides production specifications for the BL Galaxy Electrical 2SA1204 silicon planar epitaxial transistor. It includes maximum ratings, electrical characteristics, typical characteristics curves, package outline dimensions, and soldering footprint for the SOT-89 packaged transistor. The 2SA1204 is suitable for output stages up to 3 watts and has a high DC current gain, with complementary part 2SC2884.

Uploaded by

mhmd193
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

Silicon Planar Epitaxial Transistor 2SA1204

FEATURES
Pb
z Suitable for output stage of3 watts
Lead-free
Amplifier
z Suitable flat package
z High DC current gain
z PC=1.0 to 2.0W(mounted on ceramic substrate)
z Complementary to 2SC2884

SOT-89

ORDERING INFORMATION
Type No. Marking Package Code

2SA1204 RO/RY SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units
VCBO Collector-Base Voltage -35 V
VCEO Collector-Emitter Voltage -35 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -800 mA
IB Base Current -160 mA
500
PC Collector Dissipation mW
1000(Note)
Tj,Tstg Junction and Storage Temperature -55~150 ℃
Note1:Mounted on ceramic substrate(250mm2*0.8t)

Document number: BL/SSSTG039 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

Silicon Planar Epitaxial Transistor 2SA1204

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V

Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 μA

Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA

DC current gain hFE VCE=-1V,IC=-100mA 100 320

Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-20mA -0.7 V

Base-emitter VBE VCE=-1V,IC=-10mA -0.5 -0.8 V

Transition frequency fT VCE=-5V, IC=-10mA 120 MHz

Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 19 pF

CLASSIFICATION OF hFE
Rank O Y

Range 100-200 160-320

Marking RO RY

Document number: BL/SSSTG039 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

Silicon Planar Epitaxial Transistor 2SA1204

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTG039 www.galaxycn.com


Rev.A 3
BL Galaxy Electrical Production specification

Silicon Planar Epitaxial Transistor 2SA1204

PACKAGE OUTLINE
Plastic surface mounted package SOT-89

SOT-89
Dim Min Max
A 4.5 4.7
B 2.3 2.7
C 1.5Typical
D 0.35 0.55
E 1.4 1.6
F 0.4 0.6
H 1.55 1.75
J 0.4Typical
K 4.15 4.25
All Dimensions in mm

SOLDERING FOOTPRINT

Unit:mm

PACKAGE INFORMATION
Device Package Shipping

2SA1204 SOT-89 1000/Tape&Reel

Document number: BL/SSSTG039 www.galaxycn.com


Rev.A 4

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