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Transistor Specs for Engineers

This document provides specifications for the 2SA812 silicon epitaxial planar transistor from BL Galaxy Electrical including: - Key features of the transistor such as a DC current gain of 200 and maximum voltage ratings of -50V collector-emitter and -60V collector-base. - Applications including general purpose audio frequency amplifiers. - Maximum ratings, electrical characteristics, typical characteristics graphs, package outline diagram, and shipping/packaging information. - The transistor is available in a SOT-23 surface mount package and is marked with codes to identify its DC current gain classification range from 90-600.

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71 views5 pages

Transistor Specs for Engineers

This document provides specifications for the 2SA812 silicon epitaxial planar transistor from BL Galaxy Electrical including: - Key features of the transistor such as a DC current gain of 200 and maximum voltage ratings of -50V collector-emitter and -60V collector-base. - Applications including general purpose audio frequency amplifiers. - Maximum ratings, electrical characteristics, typical characteristics graphs, package outline diagram, and shipping/packaging information. - The transistor is available in a SOT-23 surface mount package and is marked with codes to identify its DC current gain classification range from 90-600.

Uploaded by

daniela espinosa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA812

FEATURES
Pb
z Commplementary to 2SC1623.
Lead-free
z High DC current gain:hFE=200typ.
(VCE=-6.0V,IC=-1.0mA)
z High Voltage: VCEO=-50V

APPLICATIONS
z Audio frequency, general purpose amplifier SOT-23

ORDERING INFORMATION
Type No. Marking Package Code

2SA812 M4/M5/M6/M7 SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage -60 V

VCEO Collector-Emitter Voltage -50 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -Continuous -100 mA

PC Collector Dissipation 200 mW

Tj,Tstg Junction and Storage Temperature -55~150 ℃

Document number: BL/SSSTC010 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA812

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V

Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA

Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA

DC current gain hFE VCE=-6V,IC=-1mA 90 200 600

Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V

Base-emitter voltage VBE IC=-1mA, VCE=-6V -0.58 -0.68 V

Transition frequency fT VCE=-6V, IC=-10mA 180 MHz

Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 4.5 pF

CLASSIFICATION OF hFE(1)
Range M4 M5 M6 M7

Marking 90-180 135-270 200-400 300-600

Document number: BL/SSSTC010 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA812

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC010 www.galaxycn.com


Rev.A 3
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA812

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm
PACKAGE INFORMATION

Device Package Shipping

2SA812 SOT-23 3000/Tape&Reel

Document number: BL/SSSTC010 www.galaxycn.com


Rev.A 4
www.s-manuals.com

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