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Datasheet

This document provides specifications for the KTC3875 NPN silicon epitaxial planar transistor from BL Galaxy Electrical, including: 1) Key features such as excellent HFE linearity and low noise. 2) Maximum ratings for electrical parameters like collector-base voltage. 3) Typical characteristics like a DC current gain of 70-700. 4) Packaging details including the SOT-23 surface mount package and soldering footprint. 5) Ordering and shipping information.

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765 views4 pages

Datasheet

This document provides specifications for the KTC3875 NPN silicon epitaxial planar transistor from BL Galaxy Electrical, including: 1) Key features such as excellent HFE linearity and low noise. 2) Maximum ratings for electrical parameters like collector-base voltage. 3) Typical characteristics like a DC current gain of 70-700. 4) Packaging details including the SOT-23 surface mount package and soldering footprint. 5) Ordering and shipping information.

Uploaded by

Js Camelo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor KTC3875

FEATURES
Pb
z Complementary To KTA1504.
Lead-free
z Excellent HFE Linearity.
z Low noise.

APPLICATIONS
z General purpose application, switching application.
SOT-23

ORDERING INFORMATION
Type No. Marking Package Code

KTC3875 ALO/ALY/ALG/ALL SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage 60 V

VCEO Collector-Emitter Voltage 50 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current -Continuous 150 mA

IBB
Base Current 30 mA

PC Collector Power Dissipation 150 mW

Tj,Tstg Junction and Storage Temperature -55~150 ℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC056 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor KTC3875

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0


B 50 V

Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V

Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA

Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA

DC current gain hFE VCE=6V,IC=2mA 70 700

Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA


B

0.1 0.25 V

Transition frequency fT VCE=10V, IC= 1mA 80 MHz


Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 2.0 3.5 pF
VCE=6V,IC=0.1mA,
Noise figure NF 1.0 10 dB
F=1KHz,Rg=10KΩ

CLASSIFICATION OF hFE
Rank O Y GR BL

Range 70-140 120-240 200-400 350-700

Marking ALO ALY ALG ALL

Document number: BL/SSSTC056 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor KTC3875

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC056 www.galaxycn.com


Rev.A 3
BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor KTC3875

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

A SOT-23
E Dim Min Max
A 2.85 2.95
K B B 1.25 1.35
C 1.0Typical
D 0.37 0.43
D J
E 0.35 0.48
G G 1.85 1.95
H 0.02 0.1
H
C J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm
PACKAGE INFORMATION

Device Package Shipping

KTC3875 SOT-23 3000/Tape&Reel

Document number: BL/SSSTC056 www.galaxycn.com


Rev.A 4

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