E522.88 1
E522.88 1
88
PRODUCTION DATA – Feb 27, 2023
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Functional Diagram
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
1 Functional Safety
The development of this product is based on a process according to ISO 26262 which has been certified to be compliant to
ISO 26262 requirements and integrity levels up to ASIL D. Technical safety requirements for this product are rated ASIL B.
In order to achieve the IC target metrics for the appropriate ASIL, it is mandatory to consider the safety mechanisms and
recommendations mentioned in the safety manual.
In case of a detected failure within external LED string the IC shall give failure information
via Diag-Pin.
Fault Tolerant Time Interval For single point faults a fault tolerant time of 300ms is assumed.
For latent faults, a detection within one driving cycle (i.e. during initial self test of the Item)
is assumed to be compliant to the multiple point fault detection interval requirements.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
4 Thermal Characteristics
Table 4-1: Thermal Characteristics
No. Description Condition Symbol Min Typ Max Unit
1 QFN32L6 package junction to case thermal res- RTH_JC_QFN32L6 5 K/W
istance*) 1)
2 QFN32L6 package junction to ambient thermal RTH_JA_QFN32L6 28 K/W
resistance*) 1)
*)
Not tested in production
1)
Based on JEDEC standards JESD-51-2(still air), JESD-51-5(exposed pad soldered to PCB) and JESD-51-7(four layer PCB)
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
5 Electrical Characteristics
(VVS = 5V to 32V, TA = -40°C to +125°C, unless otherwise noted. Typical values are at V VS = 12.0V and TA = +25°C. Positive cur-
rents flow into the device pins.)
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
• All accuracy values are valid when lower range is selected for currents below 40mA and upper range is selected for currents above 40mA. When using
analog channel bundling, the stated accuracy values are valid for current sums above 20mA of the two bundled channels.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
IConf=100 mA IConf=100 mA
100,0 100,00
0°C
°C
5°C
25
T=-4
T=2
1
T=
80,0 IConf=75 mA 80,00 IConf=75 mA
Current into pin LEDx / mA
40,0 40,00
IConf=25 mA IConf=25 mA
20,0 20,00
0,0 0,00
0 3 6 9 12 15 18 21 24 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2
Voltage at pin LEDx / V Voltage at pin LEDx / V
Figure 6-1: Output Current vs Output Voltage Figure 6-4: Output Current vs Output Voltage vs Temperature
6 104
5
103
4
max limit
max limit 102 LED00
3
LED0 LED01
LED1
2 LED02
LED2
101 LED03
LED3
1 LED4 LED04
LED5 LED05
Current / mA
Accuracy / %
-6 96
10 20 30 40 50 60 70 80 90 100 -40 -20 0 20 40 60 80 100 120
IConf / mA Temperature / °C
Figure 6-2: Accuracy of LED-Current at Room Temperature Figure 6-5: Accuracy of 100 mA Current vs Temperature
8 7,15
7
7,1
6
7,05
5
Current Consumption / mA
Current Consumption / mA
7 VS = 6 V
VS = 8 V
4 VS = 10 V
VS = 12 V
6,95 VS = 14 V
3 VS = 16 V
VS = 18 V
VS = 20 V
6,9
2
6,85
1
0 6,8
Reset 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 -40 -20 0 20 40 60 80 100 120
Number of enabled LED-Channels Temperature / °C
Figure 6-3: Current Consumption at Nominal Condition Figure 6-6: Current Consumption vs. Condition
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60 0,6
50
0,5
40
0,4
30 t_rise, 100 mA
LED-Current / mA
t_rise, 75 mA
Time / µs
0,3 t_rise, 50 mA
PWM t_rise, 25 mA
20 LED-Current t_fall, 100 mA
t_fall, 75 mA
0,2 t_fall, 50 mA
t_fall, 25 mA
10
0,1
0
-10 0
-200 0 200 400 600 800 1000 1200 1400 1600 1800 0 0,5 1 1,5 2 2,5 3 3,5
Figure 6-7: Rise- and Falltime of LED Driver with Slew=0 Figure 6-9: Rise- and Falltime with Slew=0 vs. Pin-Voltage
Note: Note:
• The overshoot after the fall-ramp is generated by the • Time was measured from 10% to 90% of final current
parasitic serial inductance of the measurement cables. • Fully settled current may be saturated when Pin-Voltage is
• Pin-Voltage in on-state is >1V. < 1.0V, according to Figure 6-4
120 120
100 100
80 80
slew=1 slew=1
slew=1 slew=1
current / mA
current / mA
slew=1 slew=1
60 60
slew=2 slew=2
slew=2 slew=2
slew=2 slew=2
slew=3 slew=3
40 40
slew=3 slew=3
slew=3 slew=3
20 20
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
time / µs time / µs
Figure 6-8: Risetime of LED Driver with activated Slew-Rate Figure 6-10: Falltime of LED Driver with activated Slew Rate
Notes:
• Measurement done with Pin-Voltage > 1.0 V in on-state
• Swept over 3 different current settings
• As can be seen, Rise/Falltime is mostly independent of selected current value
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
7 Functional Description
7.1 System Introduction
The E522.88 is a multi-channel PWM driver for lighting applications. It provides 16 current sinks with integrated 10bit PWM
generator for each channel. Each driver can be used to drive external loads up to 100mA with a selectable LED current slew
rate. All LED channels provide separate PWM duty cycle settings and high precision wide-range LED current configuration.
The device can support up to eight light functions using five discrete pins to trigger these light functions. There are two
modes, main mode and animation mode, differentiated by the ANI_IN signal. The light function can be implemented using
simple instructions. The device offers flexibility for light functions to be associated with available LED channels. A maximum
of four light functions can execute in parallel.
Various diagnostic features, like LED open and short condition detection, are provided to meet automotive requirements.
An advanced device power management feature makes it possible to bundle LED channels and use an automatic current bal-
ancing to reduce device thermal dissipation.
To protect the device from thermal damage, it implements a configurable, LED supply and device temperature dependent,
LED current derating.
The LED driver device can be used in a device group, configured to behave like a single lamp in case of an LED open or short
condition. For this reason two diagnosis groups can be defined and used to connect the grouped LED driver devices.
The device offers a wide range of operating modes to cover different use cases.
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The device implements the following states as shown in the figure above:
• START
1. Evaluates the reset resources.
• INIT-1
1. Initializes RAM code - Issues reset on CRC mismatch.
2. Checks calibration CRC - Issues reset on CRC mismatch.
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• Note : The device monitors health of internal circuit blocks and triggers a SOFT RESET in case of any malfunction. SOFT
RESET may be triggered from any of the device states.
The following table shows the status of the components based on the operating state of the device.
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• state START
This state will be entered when periodic resets are detected after reaching RESET_BEHAVIOUR.number_retries + 1
resets.
LED's disabled.
This state will be left automatically after a time defined in RESET_BEHAVIOUR.unresponsive_time.
Active LED driver stages will be measured for diagnosis and the ADC result data is written to the BUS_STATUS area.
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If no communication device address has been programmed , the bus interface is inactive and will not receive or interpret I²C
memory access frames. To switch such a device to an active I²C interface mode, the PROG pin has to be set to active high
level during device startup. The device will then be accessible using device address 31 and device group 1.
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To assign unique device addresses to all LED driver devices connected to a common bus, the following procedure can be
used:
1. Set one device PROG pin to active high level and restart at least this device via it's reset pin or a power cycle.
2. Access the device using the device address value 31 and device group 1.
3. Program a unique device address value (larger than 0, smaller than 31) to COM_DEV_ADDR.
4. Remove the PROG pin active high level and repeat these steps with all other devices.
The following sections provide details of the protocol to configure user OTP area and the constraints that need to be fol-
lowed.
Data words (10 bit words) are transferred in a compact byte manner. Data is always handled as 10 bit word values. If the bus
master sends a number of data word stream bits which is not a multiple of 8, the additional fill bits at the end of the data
stream will be ignored by the bus slave device.
Protocol components:
The following figure shows the components used by the protocol and their implementation.
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START
START 0-BIT 1-BIT ACK NACK STOP repeated
(S) (0) (1) (A) (NA) (P) (SR)
SCL
SDA
• S : start condition
• P : stop condition
• SR : repeated start condition
• A : acknowledge
• NA : not acknowledge
CRC8 A
7 0
CRC8 A P
7 0
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S
device address 1 A
R
6 0
writeCRC8
data word A
7 0
N
writeCRC8
data word P
A
7 0
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Eight words (x10) of direct access memory (BUS_CONFIG :0x78 - 0x7F) area are used as protocol packets between host and
the device.
For writes, 8 word packets are used. The OTP address is specified as:
Target Address = PageNumber x 128 + Offset.
For an eight word I²C read/write frame with starting address 0x78, the packet details is mentioned below and shown in the
figure above.
*The PageNumber is provided as data at address 0x7C
*The Offset as data at address 0x7D
*The 32 bit data is provided as :
Bits 31:24 at address 0x7B
Bits 23:16 at address 0x7A
Bits 15:08 at address 0x79
Bits 07:00 at address 0x78
*The data at address 0x7E indicates write/read:
0x00 indicates a read and 0x01 a write. For a read frame the data from 0x78-0x7B is ignored.
*For any communication to the device the data at address 0x7F has to be set to 0x01 , by the master. This is used for
synchronization between I²C master and slave. The slave writes "0" to the address 0x7F on completion of the request. The
master has to poll the data at address 0x7F to return to "0". Once the read data at address 0x7F is "0", next frame can be sent
to the device. If this protocol is not followed, it may lead to unexpected behavior, inclusive of the device becoming unus-
able.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
For read requests, four word packets starting from 0x7C can also be used and 4 words starting from 0x78 have to be read for
the device data.
Any write has to be preceded and ended with special ram register writes. Reads can be carried out anytime.
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The inputs are sampled serially as shown in the figure, at every T STEP interval. The digital pins (IN_0 and IN_1) are sampled first
followed by LED pins (IN_2_LED2, IN_3_LED3 and OE_LED10 ). In each sampling window an input is sampled thrice and the
value which is at least twice in that interval is selected as the input value. Once detected in this manner , the input is not
looked at till the next TSTEP. The sampling of input and software filtering ensures that glitches in the signal are ignored. To
ensure that an input signal is surely detected it has to be held active for at least T STEP interval.
The internal TSTEP is asynchronous with respect to the external input signals. The serial sampling and lack of sync means that
input signals triggered simultaneously can be detected with a delay of T STEP. This means that the input signal to sequence trig-
gering can have an uncertainty of TSTEP in addition to detection to trigger delay.
For a simultaneous excitation of triggers there can be a difference of T STEP in the respective sequence getting triggered. To
ensure consistent triggering of sequences follow the guidelines mentioned in the section: 7.6.1.3: Mode transition.
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The description in the following chapters refers to the internal signal states, which represent the "default" control signal
polarity.
For LED pins configured as input pins ( IN_2_LED2, IN_3_LED3 and OE_LED10) there is pull-down current irrespective of the
active high or active low polarity. These pins do not have a pull resistor, but have the current sink configured for minimum
current.
ANI_IN, IN_0 and IN_1 show a pull-down behavior if active high polarity is selected. The pull direction changes with the selec-
ted polarity. It changes to pull-up if the active low polarity is selected.
The following figures show the pull-up and pull-down IO typical current behavior of the digital IOs. The internal pull resistor
voltage will be limited to approximately VDIG_PULL+0.2V. For this reason the pull current saturates above VDIG_PULL+0.2V IO input
voltage.
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7.6.1 Sequences
7.6.1.1 Sequence Trigger & mode of operation
The device offers up to eight sequences which are mapped to their corresponding input pins. At any point of time four
sequences can run in parallel. The device offers two modes of operation Main mode and Animation mode.
• Main mode
This mode is meant for the basic light functions which implement the regulatory requirements i.e., TAIL, BRAKE, TURN.
• Animation mode
This mode is meant for non-critical light functions i.e LEAVE HOME, COME HOME.
The mode selection allows the device to have two times the number of light functions with one additional mode selection
pin(ANI_IN). The only difference between the two modes is the priority. The Main mode has higher priority with respect to
Animation mode. This is described in more detail in the Mode transition section.
The sequence mapping to the trigger signals, mode of operation and priority is shown in the table below.
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Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
For transition from Main mode to Animation mode, the following conditions have to be satisfied
1. All active main mode sequences should be de-activated
2. The ANI_IN signal has to be active
3. There has to be at-least once TSTEP of quiet period (no Sequence triggered) between Animation mode activation and trig-
gering of animation mode sequence.
Transition from Animation mode to Main mode happens as soon as the ANI_IN signal is de-activated. The active animation
sequences will be de-activated and corresponding Main mode sequences will be started.
To switch the device predictably between modes the recommended steps are
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Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
The sequence database is split into two parts : fixed and variable. Fixed part occupies 4 bytes of space per entry and contains
instruction, index into variable parameter array as specified below.
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The fixed part of sequence database starts at 0x34B4 and can grow up to 0x36B3, depending on number of instructions. The
variable part starts after the fixed part. The starting address of this variable part is placed at 0x34B0. The variable part of the
sequence database can grow up to 0x3BF3, leaving the reserved spaces in between. ParIndex in the fixed part is 2 byte
aligned. This variable part is used to store pwms (SETLNKxx) and pwm percentages (DIMx) for channels mentioned in the
sequence (main or animation) to which this sequence database entry is associated with.
{1,X,X,X,X,0, 1, 0x00E0}, // Seq 0 - LED5, LED6 and LED7 ; start index = 0, stop index = 1
{1,X,X,X,X,2, 3, 0x1800}, // Seq 1 - LED11 and LED12 ; start index = 2, stop index = 3
{1,X,X,X,X,4, 5, 0x2000}, // Seq 2 - LED13 ; start index = 4, stop index = 5
{1,X,X,X,X,6,10, 0xC000}, // Seq 3 - LED14 and LED15 ; start index = 6, stop index = 10
00{SETLNKON, 0x33,0x1234,0x00,0x00,0x00,0x00,0x00,0x7F,0x3F,0x2F,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00}
01{GOTO, 0x00,0x0000,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00}
02{SETLNKOF, 0x19,0x5678,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x6F,0x1F,0x00,0x00,0x00}
03{GOTO, 0x02,0x0000,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00}
04{SETLNKOF, 0x22,0x9ABC,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0xFF,0x00,0x00}
05{GOTO, 0x04,0x0000,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00}
06{SETLNKOF, 0x40,0xDEF0,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x5F,0xD0}
07{DIM, 0x20,0x01F4,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0xFE,0x02}
08{LNKON, 0x00,0x0000,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00}
09{WAIT, 0x00,0xFFFF,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00}
10{GOTO, 0x06,0x0000,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00,0x00}
The figure below shows the organization of the above instructions in the OTP memory based on the given sequence configur-
ation.
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7.6.2 Instructions
The sequences control the LED channels via the instructions. The instructions available to control the device behavior are lis-
ted in the table below. The state machine executing the instructions is driven by a clock with a period of T STEP. The instructions
allow the user to set a maximum current of 102.3mA / channel, however Elmos recommends to limit this to 100mA / chan-
nel.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
• During PWM duty cycle ramp up the device increments PWM pulse length to larger values and reloads these values a short
time after a previous PWM pulse has been finished. The PWM channels may get active "again" to "finish" the new (just
loaded) PWM pulse length. This can result in the short pulses on the LED channel. This happens only during automatic
internal duty cycle transition and does not happen for steady state conditions.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Only for the LED channels that are associated with the
sequence
DIM instruction:
Opcode 1 byte, Current 1 byte, Steps 2 bytes, Indexing 2 bytes, PWM 1 byte for every enabled channel, Padding to make the overall number of bytes even.
• During PWM duty cycle ramp up the device increments PWM pulse length to larger values and reloads these values a short
time after a previous PWM pulse has been finished. The PWM channels may get active "again" to "finish" the new (just
loaded) PWM pulse length. This can result in the short pulses on the LED channel. This happens only during automatic
internal duty cycle transition and does not happen for steady state conditions.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Only for the LED channels that are associated with the
sequence
DIMX instruction :
Opcode 1 byte, Current 1 byte, Steps 2 bytes, Indexing 2 bytes, PWM 1 byte for every enabled channel, Padding to make the overall number of bytes even.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
7.6.3 Constraints
The E522.88 device can be configured as per the application requirement. There are constraints which need to be followed to
ensure that the device functions in a predictable manner.
The following constraints must be followed:
1. Sequences (main or animation) can contain channels configured for lighting function only.
2. Start and end index of any sequence should be within the range of sequence database.
3. Any instruction in the sequence database should be from the device instruction set.
4. No blank entry is allowed the within programmed sequence database.
5. Consecutive LIGHT channels (0 and 1, 2 and 3, ....) can only be analog bundled.
6. Analog bundled channels cannot be spread across multiple sequences and should be part of same sequence(s). For
example, if LED12 and LED13 are configured to be analog bundled, both or none can be part of any sequence.
7. Any channel configured for alternate function cannot be used for analog bundling.
If DG0_LED0/DG1_LED1 is used for alternate function (Diagnostic), bundling cannot be enabled on DG0_LED0 and
DG1_LED1
If IN_2_LED2/IN_3_LED3 is used for alternate function (Input), bundling cannot be enabled on IN_2_LED2 and
IN_3_LED3
If LNK0_LED4/LNK1_LED5 is used for alternate function (Linking), bundling cannot be enabled on LNK0_LED4 and
LNK1_LED5
If LNK2_LED6/LNK3_LED7 is used for alternate function (Linking), bundling cannot be enabled on LNK2_LED6 and
LNK3_LED7
If BIN0_LED8/BIN1_LED9 is used for alternate function (Binning), bundling cannot be enabled on BIN0_LED8 and
BIN1_LED9
If OE_LED10 is used for alternate function (Output enable), bundling cannot be enabled on OE_LED10 and LED11
8. A LIGHT channel cannot be associated with both the BIN pins.
9. BIN_CLASS_LEVEL's should be monotonic i.e. BIN_CLASS_LEVEL_3 > BIN_CLASS_LEVEL_2 > BIN_CLASS_LEVEL_1 >
BIN_CLASS_LEVEL_0.
10. Index in the GOTO command should be within the range of the corresponding sequences start and stop indices.
11. Parameter index in sequence database (for variable parameters) should be valid (within the user data space) and aligned
with a 2 byte boundary.
12. During configuration, following OTP memory addresses are not to be written by the user:
39F4 DEVICE_VERSION (4 bytes)
39F8 UDIN (4 bytes)
3B7A DEVICE_INFO (2 bytes)
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13. I²C addresses (0x00 - 0x77) should not be written. These addresses are used to define memory access protocol and incor-
rect data written to these registers may render the device unusable.
14. IDAC_REF_SEL_0_15 should be written with following data:
0 when configured as LED's
1 when configured as alternate function pin
system prescale prescaled common period counter PWM pulse PWM pulse
clock (8MHz) counter clock period counter value generation logic 16 signals
The timing figure below shows an example timing of the prescaler counter, the period counter and different pulse lengths
shown as LED channels a, b and c. In this example the prescaler is configured with a value of 5, resulting in a prescaler divid-
ing factor of 6 system clock cycles. The period counter in this example is configured with a value of 4 which results in count-
ing from 0 to 3. The period counter is incremented every time the prescaler counter is reset to 0 when reaching it's configura-
tion value. The period counter itself is reset to 0 every time it reaches it's period configuration value minus one. This results
in a PWM period length equal to the PWM_PERIOD configuration value, based on a prescaled increment clock. In the
example timing below, the pulse starting time stamps are equal and correspond to the period counter re-start event time
stamp. The channel a is configured to generate a 2 PWM cycle pulse, the channel b is configured to generate a 3 PWM cycle
pulse and the channels c generates a 100% duty cycle pulse. A channel PWM pulse length configured to be longer than the
PWM period will result in 100% duty cycle for this channel.
The firmware configures the PWM_PERIOD to 1023 and is not available for user configuration. The PWM_PRESCALER is avail-
able in the user OTP configuration area. The individual pulses for the LED channels are derived from the user sequences. The
instructions have operands which provide the PWM or delta PWM operands which are processed and provided to the
internal hardware by the device controller.
Each PWM pulse generation logic channel uses its own virtual PWM period and can be set up to generate a PWM signal with
duty cycles from 0% up to 100%. The PWM pulse starting points of the 16 channels are distributed equidistantly over the
PWM period
• *adjacent PWM channel pulse starting point distance = PWM period / 16
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
The following figure shows an example of equidistantly distributed PWM channel starting time stamps with all PWM channels
set up with 75% duty cycle. The colored parts mark the virtual PWM period of the different PWM channels.
PWM channel 0
PWM channel 1
PWM channel 2
PWM channel 3
PWM channel 4
PWM channel 5
PWM channel 6
PWM channel 7
PWM channel 8
PWM channel 9
PWM channel 10
PWM channel 11
PWM channel 12
PWM channel 13
PWM channel 14
PWM channel 15
PWM period
PWM period
If LED PWM channels are analog bundled, the bundled channels are supplied with the same PWM pulse length value (taken
from the first channel inside the combined bundled group) and will start at the same time stamp, which means these PWM
channels are active during exactly the same time period.
The following figure shows an example of a analog bundled PWM channel timing. In this example 8 groups of 2 adjacent LED
PWM channels are combined.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
PWM channel 0
PWM channel 1
PWM channel 2
PWM channel 3
PWM channel 4
PWM channel 5
PWM channel 6
PWM channel 7
PWM channel 8
PWM channel 9
PWM channel 10
PWM channel 11
PWM channel 12
PWM channel 13
PWM channel 14
PWM channel 15
PWM period
PWM period
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
100 mA
40 mA
Range ADC-
1 0
Mux
PWM
Digital
Control
Current ADC-
DAC
Mux
GND
Figure 7.8.1-1: ISINK Block Diagram
Each current sink is based on a DAC with selectable full scale range. The range can be selected per LED using the
IDAC_REF_SEL_x values.
The current sink gets current strength information and the PWM duty cycle from the digital part.
The output switch offers various slew rate settings, configurable using the IO_CONFIG.slew value, to improve EMC perform-
ance.
An internal ADC can be connected to monitor pad-voltage for diagnosis purpose.
In this device for any LED channel which is used for alternate configuration, the IDAC_REF_SEL_x has to be set for lower
range. For LED channel being used for lighting function, this has to be set for higher range.
The following figures show the relation between the current configuration value (digital set value) and the resulting LED cur-
rent. The LED current can saturate above the selected range maximum current value. Below the selected range minimum cur-
rent value the LED current behavior can be non-linear including a possible saturation of the driven LED current. For this
reason it's not recommended to select an LED current outside the selected range.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Eight pairs of LED pins offer the option to be configured in analog bundling mode (DG0_LED0 & DG1_LED1, IN_2_LED2 &
IN_3_LED3, ... LED14 & LED15). This option is intended for advanced thermal management (please see figure Advanced
Power Management), shifting power dissipation to an external power sink resistor, which reduces the driver power consump-
tion.
The channel current is regulated as a sum of currents in LED(x) and LED(x+1). The priority output LED(x) drives the current as
long as the voltage headroom allows to. The bypass output LED(x+1) is used to deliver the remaining current flow. In any case
the bypass output LED(x+1) drives at least 5% of the sum of currents preventing the LED(x+1) from regulation performance
lost. This implies, that the priority output LED(x) will drive at maximum 95% of the sum of currents.
The current sink analog bundling with prioritized current sum regulation can be enabled per LED driver pair using the
ISINK_BUNDLE configuration value. In case, an LED driver pair is configured to be bundled like described before, the phases of
both the channels will be aligned with equal pulse lengths for analog bundled LED channels.
For LED channels in analog bundling mode, the LED current, DAC range and PWM pulse length configuration will only be
taken from the lower channel configuration and will also be applied to the upper channel to provide a consistent behavior of
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
analog bundled LED channel pairs. The upper channel LED current, DAC range and PWM pulse length configuration is ignored
in this special case.
The described distribution of current allows to share some of the linear regulator power with the external power-shunt.
Figure Advanced Power Management shows the basic power dissipation per channel as a function of the LED supply voltage
at:
For further power-budget optimization, the chip offers the option to enable supply-voltage based derating of the LED cur-
rents, as well as core-temperature based derating. LED current derating is described in to following sub-chapter.
• Supply voltage based derating is displayed, starting at 20V, and decreasing the output current with 3.75mA/V up to 30V.
• Depending on ambient temperature and power dissipation in other channels, temperature derating can decrease the cur-
rent further. This is not displayed in this figure above.
The figure above shows the LED supply voltage dependent LED current derating with the following example configuration val-
ues:
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Considering a nominal LED current of 100mA, the stop LED current will be at:
The figure above shows the device junction temperature dependent LED current derating with the following example config-
uration values:
Considering a nominal LED current of 100mA, the stop LED current will be at:
The E522.88 device offers a possibility of using an external sensor to reduce the LED current. This reduction can be pro-
grammed as per application requirement. This derating feature can be used to control board thermals when used with an
external NTC/PTC resistor, sensing LED temperature.
A typical circuit that can be used to implement a thermistor based derating is shown in the figure below.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
The device when configured for sensing external voltage, sinks a current through the BIN1_LED9 pin. This current is program-
mable through OTP register BIN_CLASS_CURRENT. To ensure a robust design, Elmos recommends that this current should be
>= 10mA. The device measures the differential voltage across the pin VS and BIN1_LED9. This measured voltage Vb is used to
determine the derating factor MVB_derate. Based on the configuration of the register TEMPSENSE_TYPE and
TEMPSENSE_NTCPTC, the derating algorithm applies a multiplier MVB_derate in range [0...1] to the LED current using the for-
mulas shown in the table below.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
The average LED current is given by ISET x DC, where ISET is the programmed channel current and DC is the duty cycle at
which the channel is operated. The user has an option of applying the derating factor on either of ISET or the DC. This is con-
trolled by the register DUTY_DERATE.
When using derating along with analog bundling of channels, it is recommended to use the DC based derating.
Separate to this fixed bin configuration, the voltage drop over an external resistor connected to BIN0_LED8 or BIN1_LED9 pin
can be evaluated for LED binning. These pins can be configured for bin evaluation using the LED_ALT_CONFIG register. Once
the pin is configured for BIN evaluation,the firmware configures it for 100 percent PWM duty cycle. The sink current configur-
ation value from BIN_CLASS_CURRENT register is used to drive this pin.
Note: the voltage over the external resistor is used for bin class evaluation. The class evaluation is done every PWM cycle.
A table of 4 bin class levels (BIN_CLASS_LEVEL_x values) can be used to distinguish between 5 bin classes with separate bin
gain values (BIN_0_CLASS_GAIN_x or BIN_1_CLASS_GAIN_x values). The ADC measurement value of the pin to be evaluated
is compared to the specified levels, the resistor value related bin class gain is determined and applied to the LEDs selected
using the BIN_0_CLASS_ENABLE_x or BIN_1_CLASS_ENABLE_x values.
When the BIN_0_CLASS_ENABLE_x or BIN_1_CLASS_ENABLE_x bit of an LED channel is configured as 1. The related general
LED bin factor and the evaluated bin class gain work independently on the selected channel. The actual gain factor would be
a multiplication of general bin factor and the resistor evaluated bin gain. Both the BIN pins should not be selected for a single
LED channel.
The following figure shows an example bin class table with resistor values selected from the E12 series.
In this example the external resistor is supplied with a current of 16mA.
The external resistor is evaluated once every LED PWM period and 3 adjacent sample values are filtered using a median filter
algorithm (the last 3 values including the current value are sorted and the middle value is taken) before bin class gain selec-
tion.
The bin adoption is implemented as a LED current factor to reduce or raise the LED current depending on the LED bin class to
achieve a uniform LED luminance of LEDs connected to a single driver device and between LEDs connected to different LED
driver devices.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
The following figure shows an LED binning example of the following parameter set:
• BIN_CLASS_LEVEL_0 = 1V
• BIN_CLASS_LEVEL_1 = 2V
• BIN_CLASS_LEVEL_2 = 3V
• BIN_CLASS_LEVEL_3 = 4V
• BIN_CLASS_GAIN_0 = -25%
• BIN_CLASS_GAIN_1 = -12.5%
• BIN_CLASS_GAIN_2 = +0%
• BIN_CLASS_GAIN_3 = +12.5%
• BIN_CLASS_GAIN_4 = +25%
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
The gain and offset correction are done to ensure that max code from the configuration results in a current close to 102.3mA,
while meeting the IC accuracy specification. The fixed binning correction is an additional factor provided. This is done along
with the gain & offset correction for the current sink as shown in the above figure. This can lead to the maximum current
exceeding 102.3 mA in case of fixed binning with factors > 1.0.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
3 inputs to the measurement system can be send to a sample and hold buffer. These are:
LED(x) voltage and its supply can be sampled at the same time, and conversion of them can be done afterwards in series.
The diagnosis module will do a digital subtraction of the two results and compare it against the short detection threshold.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
For better resolution in normal supply scenarios, the LED resistor dividers will reach ADC full scale at approximately 28V (see
electrical parameter AMEAS_VLED). To implement a full scale VS derating up to 40V, another resistor divider for VS is added to the
measurement system (see electrical parameter A MEAS_VS).
*2)
Legend
Ideal
Measurement Result
Accuracy
Notes:
*1)
Xin
*1)
7.10 Diagnosis
The device implements diagnosis features to detect open or short conditions of the connected LEDs.
An LED short condition means, that the LED driver pin is shorted with the LED supply net. An LED open condition means, that
the LED driver pin is open and does not sink a significant current, e.g. caused by a broken LED or LED connection.
This diagnosis is implemented using once per PWM period ADC measurements of all LED channel voltages and their related
supply voltages.
Every diagnosis result compare operation generates an event which is fed into an LED error filter.
Each LED channel implements it's own error filter using a counter and a common error level value (IO_CONFIG.diag_level).
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
In case of a LED error condition, the filter counter value is incremented by 1 if the counter values is smaller than the IO_CON-
FIG.diag_level value. In case of an LED OK condition, the filter counter value is decremented by 1 if the error counter is larger
than 0.
When the filter counter value reaches the IO_CONFIG.diag_level value, an LED channel error flag is set and kept until the fil-
ter counter value reaches 0 again. When the filter counter value reaches 0, the LED channel error flag is cleared.
The device implements two independent diagnosis groups with their related evaluation logic shown in the figure below.
Every sequence has to be associated with at least one of these diagnostic groups or can be associated with both. Diagnostic
group 0 is flagged on DG_0_LED0 pin and Diagnostic group 1 is flagged on DG_1_LED1 pin, if the pins are configured for dia-
gnostics using LED_ALT_CONFIG.
To ensure that the device is capable of listening to other errors on a multi IC system, at least one of the DG_x_LEDx (x in 0,1)
pins have to be configured for diagnostics and associated sequence/s should be configured for single lamp mode.
An LED pin short condition evaluation is only done and signaled in case of:
• LED supply is larger than the minimum LED supply level VS_TOO_LOW.
• LED related raw (non-offset-gain corrected) LED supply ADC measurement value is not saturated
• Short detection for the pin is enabled
• PWM was active and valid (LED current slewing has finished) during ADC measurement
In case of high LED supply voltage (VLED_supply_max) above 28V the supply measurement will saturate. This leads to lower
VDIF results than expected. If the short detection threshold has low margin to the forward voltage of the LED string this may
result in false SHORT diagnosis results.
For LED supply voltages above 28V it is recommended to maintain a margin from short detection threshold voltage to the for-
ward voltage of the LED string of at least (VLED_supply_max - 28V).
An LED pin voltage based open condition evaluation is only done and signaled in case of:
• LED supply is larger than the minimum LED supply level VS_TOO_LOW.
• Voltage based Open detection for the pin is enabled
• PWM was active and valid (LED current slewing has finished) during ADC measurement
The LED channel retry measurement state is used to recover LED channels from active error state. In this state the LED chan-
nel is switched ON for the minimum time needed to do LED channel retry ADC measurement. In case of analog bundling,
both the channels will be switched ON for retry measurement. The retry pulse width is the minimum required to ensure that
the measurement can be achieved. Since the error channel is switched ON there is a possibility of error channel glowing with
minimum intensity during retry measurements.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Please note, that in SLM mode all LED channel drivers of a sequence are switched off, if at least one LED of this sequence is in
error state or off. The LEDs which cause this error state will be ON for retry measurements. This lowers the device current
consumption in OPEN/SHORT error state, which allows to detect this error state (if all device LED driver channels are com-
bined in a single diagnosis group) using a very low current consumption compare threshold.
The user has to ensure that the channel ON times are greater than the value calculated using the above equation. The device
uses the minimum value calculated as per the above equation for retry measurements in case of open/short errors.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-2: Register COM_DEV_ADDR (3400) Device address value for the communication interface 1)
Bit Name Delivery Access Description
State
15:7 - 0 R
6:5 Group 0 R Bus slave device group
address value 0 is used as broadcast address value
4:0 Address 0 R Address values 1 to 31 are used for explicit device access
1)
This is for validation using single I²C bus , in case of multiple E52288 devices are being used.
Table 7.11.1-3: Register IDAC_REF_SEL_0_15 (3402) IDAC reference (range) selection for driver channels 0 to 15 1)
Bit Name Default Access Description
15:0 IDAC_REF_SEL_0_15 0 R IDAC reference (range) selection for driver channels 0 to 15
Value of 0 selects IDAC upper range Max: 102.3 [mA]
Value of 1 selects IDAC lower range Max: 40 [mA]
1)
For any channel configured as LED this should be "0" and any channel used for alternate configuration this should be "1"
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-20: Register BIN_CLASS_CURRENT (3424) Current sink setting for BIN 0 and BIN 1 pins
Bit Name Default Access Description
15:10 - 0 R
9:0 Bin_pin_current_sink 0x00A0 R Current which will be drawn from external resistor to define voltage on
bin pin current [mA] = (current-sel x 0.1 [mA])
Default : 16mA
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-25: Register BIN_0_CLASS_GAIN_0 (342E) Selected Gain when BIN 0 pin voltage (Vb) is : Vb <
BIN_CLASS_LEVEL_0
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_CLASS_GAIN_0 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Table 7.11.1-26: Register BIN_0_CLASS_GAIN_1 (3430) Selected Gain when BIN 0 pin voltage ( Vb ) is : Vb <
BIN_CLASS_LEVEL_1 & Vb > BIN_CLASS_LEVEL_0
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_0_CLASS_GAIN_1 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Table 7.11.1-27: Register BIN_0_CLASS_GAIN_2 (3432) Selected Gain when BIN 0 pin voltage (Vb)is : Vb <
BIN_CLASS_LEVEL_2 & Vb > BIN_CLASS_LEVEL_1
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_0_CLASS_GAIN_2 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Table 7.11.1-28: Register BIN_0_CLASS_GAIN_3 (3434) Selected Gain when BIN 0 pin voltage (Vb) is: Vb <
BIN_CLASS_LEVEL_3 & Vb > BIN_CLASS_LEVEL_2
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_0_CLASS_GAIN_3 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-29: Register BIN_0_CLASS_GAIN_4 (3436) Selected Gain when BIN 0 pin voltage (Vb) is: Vb >
BIN_CLASS_LEVEL_3
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_0_CLASS_GAIN_4 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Table 7.11.1-30: Register BIN_1_CLASS_GAIN_0 (3438) Selected Gain when BIN 1 pin voltage (Vb1) is: Vb1 <
BIN_CLASS_LEVEL_0
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_1_CLASS_GAIN_0 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Table 7.11.1-31: Register BIN_1_CLASS_GAIN_1 (343A) Selected Gain when BIN 1 pin voltage (Vb1) is: Vb1 <
BIN_CLASS_LEVEL_1 & Vb1 > BIN_CLASS_LEVEL_0
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_1_CLASS_GAIN_1 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Table 7.11.1-32: Register BIN_1_CLASS_GAIN_2 (343C) Selected Gain when BIN 1 pin voltage (Vb1) is: Vb1 <
BIN_CLASS_LEVEL_2 & Vb1 > BIN_CLASS_LEVEL_1
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_1_CLASS_GAIN_2 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Table 7.11.1-33: Register BIN_1_CLASS_GAIN_3 (343E) Selected Gain when BIN 1 pin voltage (Vb1) is: Vb1 <
BIN_CLASS_LEVEL_3 & Vb1 > BIN_CLASS_LEVEL_2
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_1_CLASS_GAIN_3 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-34: Register BIN_1_CLASS_GAIN_4 (3440) Selected Gain when BIN 1 pin voltage (Vb1) is: Vb1 >
BIN_CLASS_LEVEL_3
Bit Name Default Access Description
15:10 - 0 R
9:0 BIN_1_CLASS_GAIN_4 0x200 R gain 0.50 = 0x100
gain 1.00 = 0x200
gain 1.99 = 0x3FF
Table 7.11.1-37: Register ISINK_BUNDLE (3446) Enable analog bundling for LED channels
Bit Name Default Access Description
15:8 - 0 R
7 Analog_Bundle_14_15 0 R 0: Not bundled
1: Analog bundled
6 Analog_Bundle_12_13 0 R 0: Not bundled
1: Analog bundled
5 Analog_Bundle_10_11 0 R 0: Not bundled
1: Analog bundled
4 Analog_Bundle_8_9 0 R 0: Not bundled
1: Analog bundled
3 Analog_Bundle_6_7 0 R 0: Not bundled
1: Analog bundled
2 Analog_Bundle_4_5 0 R 0: Not bundled
1: Analog bundled
1 Analog_Bundle_2_3 0 R 0: Not bundled
1: Analog bundled
0 Analog_Bundle_0_1 0 R 0: Not bundled
1: Analog bundled
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-40: Register LED_OPEN_SEL_0_15 (344E) Enable open diagnostics for LED channels
Bit Name Default Access Description
15:0 LED_OPEN_SEL_0_15 0xFFFF R Enable Open diagnostics for LED's
Bit position (X) corresponds to the LED channel. The value of the bit
determines if the channel is enabled for open detection.
0 : Open detection disabled
1 : Open detection enabled
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-44: Register LED_SHORT_SEL_0_7 (3456) Short threshold selection for LED's 0 to 7
Bit Name Default Access Description
15:14 LED7-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
13:12 LED6-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
11:10 LED5-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
9:8 LED4-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
7:6 LED3-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
5:4 LED2-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
3:2 LED1-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
1:0 LED0-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-45: Register LED_SHORT_SEL_8_15 (3458) Short threshold selection for LED's 8 to 15
Bit Name Default Access Description
15:14 LED15-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
13:12 LED14-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
11:10 LED13-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
9:8 LED12-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
7:6 LED11-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
5:4 LED10-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
3:2 LED09-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
1:0 LED08-Short threshold 0x1 R 00: SHORT detection disabled
sel 01: LED_SHORT_THR_1 level
10: LED_SHORT_THR_2 level
11: LED_SHORT_THR_3 level
Table 7.11.1-46: Register VS_TOO_LOW (345A) Threshold level for Vs too low.
Bit Name Default Access Description
15:10 - 0 R
9:0 VS_TOO_LOW 0 R When the ADC result of VS measurement is smaller than this level value
"VS too low" will be signaled.
Vs too low [V] = (level x 0.04V)
Note: LED open and short evaluation of all LED channels will be dis-
abled
in case of "VS too low".
[Note : 25LSB's/V ]
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-48: Register VT_DERATE_START (345E) Start temperature threshold for Vt derating
Bit Name Default Access Description
15:10 - 0 R
9:0 VT_DERATE_START 0x189 R temperature level at which derating starts [K]
[Default = 120 degrees Celsius]
Note: start = 0 disables temperature derating
Table 7.11.1-49: Register VT_DERATE_STOP (3460) Stop temperature threshold for Vt derating
Bit Name Default Access Description
15:10 - 0 R
9:0 VT_DERATE_STOP 0x193 R Temperature level at which derating stops [K]
[Default = 130 degrees Celsius]
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-51: Register IO_CONFIG (3464) Sets the IO polarity, LED channel slew , bin polling method and diag counter
level.
Bit Name Default Access Description
15:11 diag_level 0x0A R DIAG error counter level which has to be reached before asserting a
diagnosis error
Note: If level is 0, the filter will block all diagnosis events received from
the measurement system and it's output will not show a diagnosis
error.
Set level at least to 1 to enable the filter.
10 - 0 R
9:8 Slew_setting 01 R 00 : please see tSINK_RISE_0 and tSINK_FALL_0 parameters
01 : please see tSINK_RISE_1 and tSINK_FALL_1 parameters
10 : please see tSINK_RISE_2 and tSINK_FALL_2 parameters
11 : please see tSINK_RISE_3 and tSINK_FALL_3 parameters
7:6 RESERVED 11 R These have to be set to "11"
5 OE_polarity 1 R 0 : Active Low
1 : Active High
4 ANI_IN_polarity 1 R 0 : Active Low
1 : Active High
3 IN_3_polarity 1 R 0 : Active Low
1 : Active High
2 IN_2_polarity 1 R 0 : Active Low
1 : Active High
1 IN_1_polarity 1 R 0 : Active Low
1 : Active High
0 IN_0_polarity 1 R 0 : Active Low
1 : Active High
Table 7.11.1-52: Register RESET_BEHAVIOR (3466) Reset Behavior setting for number of retries and unresponsive time 1)
Bit Name Default Access Description
15:4 time-sel 0 R Unresponsive time after reset.
0: Reserved, not to be used
Else :
time [ms] = (10 x time-sel)
3:0 retries 0x3 R 0000: Reserved, not to be used
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-55: Register TEMPSENSE_TYPE (346C) Select internal die temperature sense or external thermistor for derating
Bit Name Default Access Description
15:1 - 0 R
0 TEMPSENSE_TYPE 0 R 0 : Internal die temperature based derating
1 : External thermistor based derating
Table 7.11.1-56: Register TEMPSENSE_NTCPTC (346E) Choose thermistor type as NTC or PTC
Bit Name Default Access Description
15:1 - 0 R
0 TEMPSENSE_NTCPTC 0 R 0 : NTC
1 : PTC
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.1-67: Register OTP_DONE (3BFC) Register which indicates that the sequence programming is done 1)
Bit Name Default Access Description
31:0 OTP_DONE 0 R Writing 0x00ACCE55 at this location enables the device to start
sequence execution after following reset. This signifies to the firmware
that device is programmed with user data.
1)
This data is to be written after the user light function has been programmed. After this the sequence information cannot be edited.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.2-18: Register RESULT_VDIF_0 (0x90) Difference of VS (Supply) and LED channel 0 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_0 NA R LED0 pin voltage ADC measurement result value
1)
36LSB's/V
Table 7.11.2-19: Register RESULT_VDIF_1 (0x91) Difference of VS (Supply) and LED channel 1 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VLED_1 NA R LED1 pin voltage ADC measurement result value
1)
36LSB's/V
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.2-20: Register RESULT_VDIF_2 (0x92) Difference of VS (Supply) and LED channel 2 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VLED_2 NA R LED2 pin voltage ADC measurement result value
1)
36LSB's/V
Table 7.11.2-21: Register RESULT_VDIF_3 (0x93) Difference of VS (Supply) and LED channel 3 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_3 NA R LED3 pin voltage ADC measurement result value
1)
36LSB's/V
Table 7.11.2-22: Register RESULT_VDIF_4 (0x94) Difference of VS (Supply) and LED channel 4 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_4 NA R LED4 pin voltage ADC measurement result value
1)
36LSB's/V
Table 7.11.2-23: Register RESULT_VDIF_5 (0x95) Difference of VS (Supply) and LED channel 5 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_5 NA R LED5 pin voltage ADC measurement result value
1)
36LSB's/V
Table 7.11.2-24: Register RESULT_VDIF_6 (0x96) Difference of VS (Supply) and LED channel 6 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_6 NA R LED6 pin voltage ADC measurement result value
1)
36LSB's/V
Table 7.11.2-25: Register RESULT_VDIF_7 (0x97) Difference of VS (Supply) and LED channel 7 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_7 NA R LED7 pin voltage ADC measurement result value
1)
36LSB's/V
Table 7.11.2-26: Register RESULT_VDIF_8 (0x98) Difference of VS (Supply) and LED channel 8 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_8 NA R LED8 pin voltage ADC measurement result value
1)
36LSB's/V
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.2-27: Register RESULT_VDIF_9 (0x99) Difference of VS (Supply) and LED channel 9 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_9 NA R Differential of LED9 pin voltage with respect to VS measured by the
ADC
1)
36LSB's/V
Table 7.11.2-28: Register RESULT_VDIF_10 (0x9A) Difference of VS (Supply) and LED channel 10 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_10 NA R Differential of LED10 pin voltage with respect to VS measured by the
ADC
1)
36LSB's/V
Table 7.11.2-29: Register RESULT_VDIF_11 (0x9B) Difference of VS (Supply) and LED channel 11 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_11 NA R Differential of LED11 pin voltage with respect to VS measured by the
ADC
1)
36LSB's/V
Table 7.11.2-30: Register RESULT_VDIF_12 (0x9C) Difference of VS (Supply) and LED channel 12 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_12 NA R Differential of LED12 pin voltage with respect to VS measured by the
ADC
1)
36LSB's/V
Table 7.11.2-31: Register RESULT_VDIF_13 (0x9D) Difference of VS (Supply) and LED channel 13 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_13 NA R Differential of LED13 pin voltage with respect to VS measured by the
ADC
1)
36LSB's/V
Table 7.11.2-32: Register RESULT_VDIF_14 (0x9E) Difference of VS (Supply) and LED channel 14 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_14 NA R Differential of LED14 pin voltage with respect to VS measured by the
ADC
1)
36LSB's/V
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.2-33: Register RESULT_VDIF_15 (0x9F) Difference of VS (Supply) and LED channel 15 pin voltage 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDIF_15 NA R Differential of LED15 pin voltage with respect to VS measured by the
ADC
1)
36LSB's/V
Table 7.11.2-34: Register RESULT_VT (0xB0) Device temperature ADC measurement result value
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VT NA R VT (temperature) ADC channel result data value in Kelvin Example: T =
25C -> data = 273 + 25 = 298
Table 7.11.2-35: Register RESULT_VSUP (0xB1) Supply ADC meas result value1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VSUP NA R Supply ADC meas result value
1)
25LSB's/V
Table 7.11.2-36: Register RESULT_VDD5 (0xB2) VDD5 voltage ADC measurement result value 1)
Bit Name Default Access Description
15:10 - 0 R Unused
9:0 RESULT_VDD5 NA R VDD5 voltage ADC measurement result value
1)
142LSB's/V
Table 7.11.2-37: Register LED_OPEN_0_7 (0xB8) LED channels 0 to 7 open detection status value
Bit Name Default Access Description
15:8 - 0 R Unused
7:0 LED_OPEN_0_7 NA R bit0:LED channel 0 open detection status value
bit1:LED channel 1 open detection status value
bit2:LED channel 2 open detection status value bit3:LED channel 3 open
detection status value
bit4:LED channel 4 open detection status value
bit5:LED channel 5 open detection status value
bit6:LED channel 6 open detection status value
bit7:LED channel 7 open detection status value
Table 7.11.2-38: Register LED_OPEN_8_15 (0xB9) LED channels 8 to 15 open detection status value
Bit Name Default Access Description
15:8 - 0 R Unused
7:0 LED_OPEN_8_15 NA R bit0:LED channel 8 open detection status value
bit1:LED channel 9 open detection status value
bit2:LED channel 10 open detection status value
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 7.11.2-39: Register LED_SHORT_0_7 (0xBA) LED channels 0 to 7 short detection status value
Bit Name Default Access Description
15:8 - 0 R Unused
7:0 LED_SHORT_0_7 NA R bit0:LED channel 0 short detection status value
bit1:LED channel 1 short detection status value
bit2:LED channel 2 short detection status value
bit3:LED channel 3 short detection status value
bit4:LED channel 4 short detection status value
bit5:LED channel 5 short detection status value
bit6:LED channel short detection status value
bit7:LED channel short detection status value
Table 7.11.2-40: Register LED_SHORT_8_15 (0xBB) LED channels 8 to 15 short detection status value
Bit Name Default Access Description
15:8 - 0 R Unused
7:0 LED_SHORT_8_15 NA R bit0:LED channel 8 short detection status value
bit1:LED channel 9 short detection status value
bit2:LED channel 10 short detection status value
bit3:LED channel 11 short detection status value
bit4:LED channel 12 short detection status value
bit5:LED channel 13 short detection status value
bit6:LED channel 14 short detection status value
bit7:LED channel 15 short detection status value
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
8 Additional Information
The following hardware, software and additional information as well as calculation tools are available on request. Please get
in contact with your responsible key account manager or ask via Elmos Inside Sales. The following documents are available:
• Evaluation kit
• GUI tool for configuring the device
• Calculation tool for dimension'ing external resistors for thermal power distribution
• GUI tool for simulating the device configuration
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
9 Typical Applications
Figure 9-1: VS Supplied LEDs , 2 main mode groups with bin and diagnostic
Device and connected LEDs are supplied by VS.
Device is controlled by IN_0 and IN_1 along with ANI_IN pin.
Device is connected with other devices via diagnosis (DIAG) network.
Device can be configured to drive mixed LED structures.
Figure 9-2: VS Supplied LEDs, with 4 inputs and channels extended by linking with another device
Device and connected LEDs are supplied by VS.
Device is controlled by IN_0,IN_1, IN_2_LED2, IN_3_LED3 and ANI_IN pins.
Device is connected with other devices via diagnosis (DIAG) network.
Device can be configured to drive mixed LED structures.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
10 Package Reference
The package and land pattern drawing(s) and dimensions in this data sheet may not reflect the most current specifications.
For the latest package outline specification 08SP0640S contact your local Elmos representative.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Description Symbol mm
Lead pitch e 0.6 0.65 0.7
Length of terminal for soldering to substrate L 0.35 0.4 0.45
Step cut depth (incl. plating layer) SCD 0.100 0.135 0.170
Step cut width (incl. plating layer) SCW 0.01 0.05 0.075
Number of terminal positions N 32
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Table 10.2-1: Land Pattern Recommended Characteristics QFN32L6, 0.6mm option - SLP
unit [mm] D8/E8 b3 L3 d1 d2
typ 6.80 0.33 0.85 0.40 0.05
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
11 General
11.1 WARNING - Life Support Applications Policy
Elmos Semiconductor SE is continually working to improve the quality and reliability of its products. Nevertheless, semicon-
ductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing Elmos Semiconductor SE products, to observe standards of safety, and to
avoid situations in which malfunction or failure of an Elmos Semiconductor SE Product could cause loss of human life, body
injury or damage to property. In development your designs, please ensure that Elmos Semiconductor SE products are used
within specified operating ranges as set forth in the most recent product specifications.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
12 Contact Info
Table 12-1: Contact Information
Headquarters
Elmos Semiconductor SE
Heinrich-Hertz-Str. 1
D-44227 Dortmund (Germany)
Phone: +49(0)231/7549-100
sales-germany@elmos.com
www.elmos.com
© Elmos Semiconductor SE, 2023. Reproduction, in part or whole, without the prior written consent of Elmos Semiconductor SE, is prohibited.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
13 Contents
Table of Content
Features...........................................................................................................................................................................................1
Applications......................................................................................................................................................................................1
General Description.........................................................................................................................................................................1
Ordering Information.......................................................................................................................................................................1
Typical Operating Circuit..................................................................................................................................................................1
Functional Diagram..........................................................................................................................................................................2
Pin Configuration QFN32L6..............................................................................................................................................................3
Pin Description QFN32.....................................................................................................................................................................3
1 Functional Safety..........................................................................................................................................................................5
1.1 Technical Safety Requirements...........................................................................................................................................5
2 Absolute Maximum Ratings.........................................................................................................................................................6
3 Recommended Operating Conditions..........................................................................................................................................7
4 Thermal Characteristics................................................................................................................................................................8
5 Electrical Characteristics..............................................................................................................................................................9
5.1 Power Supply and Resets....................................................................................................................................................9
5.1.1 Voltage regulator and references...............................................................................................................................9
5.1.1.1 Voltage Regulator 5V.........................................................................................................................................9
5.1.2 Overtemperature Module..........................................................................................................................................9
5.2 Device Startup.....................................................................................................................................................................9
5.3 Bus Interface......................................................................................................................................................................10
5.3.1 I²C Slave Bus Interface..............................................................................................................................................10
5.4 Input Interface...................................................................................................................................................................10
5.5 Digital IOs...........................................................................................................................................................................11
5.6 PWM System.....................................................................................................................................................................11
5.7 LED Current Sinks..............................................................................................................................................................12
5.7.1 Current sinks.............................................................................................................................................................12
5.8 Measurement System.......................................................................................................................................................13
5.8.1 SAR ADC....................................................................................................................................................................13
6 Typical Operating Characteristics...............................................................................................................................................14
7 Functional Description...............................................................................................................................................................16
7.1 System Introduction..........................................................................................................................................................16
7.2 Device Startup...................................................................................................................................................................17
7.2.1 Device States.............................................................................................................................................................17
7.2.1.1 Device internal error detection and handling..................................................................................................19
7.2.2 Device data handling................................................................................................................................................19
7.3 Bus Interface......................................................................................................................................................................21
7.3.1 I²C Slave Bus Interface..............................................................................................................................................21
7.3.1.1 I²C Interface Features.......................................................................................................................................21
7.3.1.2 I²C Protocol.......................................................................................................................................................21
7.3.1.3 I²C Programming..............................................................................................................................................23
7.3.1.3.1 OTP user data protocol...........................................................................................................................24
7.3.1.3.2 OTP read/write steps..............................................................................................................................25
7.4 Input Interface...................................................................................................................................................................26
7.4.1 Input Sampling..........................................................................................................................................................26
7.4.2 OE PWM Masking.....................................................................................................................................................27
7.5 Digital IOs...........................................................................................................................................................................27
7.6 User Sequence System......................................................................................................................................................28
7.6.1 Sequences.................................................................................................................................................................28
7.6.1.1 Sequence Trigger & mode of operation..........................................................................................................28
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor SE reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.