SEMICONDUCTOR

RoHS
4N80 Series RoHS
Nell High Power Products
N-Channel Power MOSFET
(4A, 800Volts)
DESCRIPTION
The Nell 4N80 is a three-terminal silicon
device with current conduction capability of 4A,
fast switching speed, low on-state resistance, D
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications . G GD
D
S S
FEATURES TO-220AB TO-220F
RDS(ON) = 3.6Ω @ VGS = 10V (4 N80A ) (4N80AF)
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance D (Drain)
(C RSS = 9pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
G
150°C operation temperature (Gate)

PRODUCT SUMMARY
S (Source)
ID (A) 4
VDSS (V) 800
RDS(ON) (Ω) 3.6 @ V GS = 10V
QG(nC) max. 25

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 800
V DGR Drain to Gate voltage R GS =20KΩ 800 V

V GS Gate to Source voltage ±30

T C =25°C 4
ID Continuous Drain Current
T C =100°C 2.5
A
I DM Pulsed Drain current(Note 1) 15.6

I AR Avalanche current(Note 1) 4

E AR Repetitive avalanche energy(Note 1) I AR =4A, R GS =50Ω, V GS =10V 13

mJ
E AS Single pulse avalanche energy(Note 2) I AS =4A, L=57mH 460

dv/dt Peak diode recovery dv/dt(Note 3) 4.0 V /ns

TO-220AB 106 (0.85)

PD Total power dissipation (Derate above 25°C) T C =25°C
TO-220F 36 (0.29) W(W/°C)

TJ Operation junction temperature -55 to 150

T STG Storage temperature -55 to 150 ºC

TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300

Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)
Note: 1. Repetitive rating: pulse width limited by junction temperature. .
2 . I AS = 4 A, V DD = 50V, L = 57mH, R GS = 25Ω, starting T J =25°C.
3 . I SD ≤ 4A, di/dt ≤ 200A/µs, V DD ≤ V (BR)DSS , starting T J = 25°C.

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 SEMICONDUCTOR
RoHS
4N80 Series RoHS
Nell High Power Products

THERMAL RESISTANCE
SYMBOL PARAMETER Min. Typ. Max. UNIT
TO-220AB 1.20
Rth(j-c) Thermal resistance, junction to case
TO-220F 3.45 ºC/W

Rth(j-a) Thermal resistance, junction to ambient TO-220AB/TO-220F 62.5

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT
OFF CHARACTERISTICS
V(BR)DSS Drain to source breakdown voltage I D = 250µA , V GS = 0V 800 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 250µA, V DS =V GS 0.95 V/ºC

V DS =800V, V GS =0V T C = 25°C 10
I DSS Drain to source leakage current μA
V DS =640V, V GS =0V T C =125°C 100
Gate to source forward leakage current V GS = 30V, V DS = 0V 100
I GSS nA
Gate to source reverse leakage current V GS = -30V, V DS = 0V -100

ON CHARACTERISTICS
R DS(ON) Static drain to source on-state resistance I D =2A, V GS = 10V 2.5 3.6 Ω
V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 3 5 V
g fs Forward transconductance (Note 1) V DS =50V, I D =2A 3.8 S
DYNAMIC CHARACTERISTICS
C ISS Input capacitance 680 880
C OSS Output capacitance V DS = 25V, V GS = 0V, f =1MHz 75 100 pF
C RSS Reverse transfer capacitance 9 12

SWITCHING CHARACTERISTICS

t d(ON) Turn-on delay time 16 40

tr Rise time 45 100
V DD = 400V, V GS = 10V, l D = 4A,
t d(OFF) Turn-off delay time ns
R GS = 25Ω (Note 1 , 2 ) 35 80
tf Fall time 35 80
QG Total gate charge 19 25
V DD = 640V, V GS = 10V, I D = 4A
Q GS Gate to source charge 4 nC
(Note 1, 2)
Q GD Gate to drain charge (Miller charge) 9

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT
VSD Diode forward voltage I SD = 4A, V GS = 0V 1.4 V
Is (Is D ) Continuous source to drain current Integral reverse P-N junction 4
diode in the MOSFET D (Drain)

A
I SM Pulsed source current G 15.6
(Gate)

S (Source)

t rr Reverse recovery time I SD = 4A, V GS = 0V, 580 ns

Q rr Reverse recovery charge dI F /dt = 100A/µs 3.7 µC

Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% .

2. Essentially independent of operating temperature.

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 SEMICONDUCTOR
RoHS
4N80 Series RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME

4 N 80 A

Current rating, ID
4 = 4A

MOSFET series
N = N-Channel

Voltage rating, VDS

80 = 800V

Package type
A = TO-220AB
AF = TO-220F

Fig.1 On-region characteristics Fig.2 Transfer characteristics

1
10 V GS
Top: 15 V 1
10 V 10
Drain current, l D (A)

80 V
Drain current, l D (A)

70 V
60 V
0 Bottorm: 5.5 V 150°C
10

0
10 25°C -55°C
-1
10
*Notes:
*Notes:
1. V DS =50V
1.250µs Pulse test
2.250µs Pulse test
2.T c =25°C -1
10
-2
10
10
-1
10
0
10
1 2 4 6 8 10
Gate-Source voltage, V GS (V)
Drain-to-Source voltage, V DS (V)

Fig.3 On-resistance variation vs. drain Fig.4 Body diode forward voltage variation vs.
current and gate voltage Source current and temperature
Drain-source breakdown voltage, BV DSS

7
Reverse Drain current , l DR (A)

1
6 10

5 V GS =10V

0 25°C
4 10
V GS =20V
150°C

3 *Notes:
*Note:T J =25°C 1.V GS =0V
2.250μs Pulse test
-1
2 10
0 2 4 6 8 10 0 4 8 12 16 20

Drain current, I D (A) Source-drain voltage, V SD (V)

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 SEMICONDUCTOR
RoHS
4N80 Series RoHS
Nell High Power Products

Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics

1200 12
C ISS =C GS +C GD (C DS =shorted)

Gate-Source voltage,V GS (V)

C OSS =C DS +C GD C RSS =C GD V DS = 160V
1000 10
Capacitance (pF)

V DS = 400V
C ISS
800 8 V DS = 640V

600 C OSS 6

400 Notes: 4
1.V GS =0V
C RSS
2.f=1MHz
200 2 *Note:I D =4A

0 0
-1 0 1
10 10 10 0 4 8 12 16 20

Drain-Source voltage, V DS (V) Total gate charge, Q G (nC)

Fig.7 Breakdown voltage variation Fig.8 On-resistance vs. temperature

vs. temperature
Drain-source breakdown voltage, V (BR)DSS

1.2 3
Drain-Source on-resistance, R DS(ON)

2.5
1.1
(Normalized)

2
(Normalized)

1 1.5

1
*Notes: *Notes:
0.9
1.V GS =0V 1.V GS =10V
0.5 2.I D =2A
2.I D =250µA

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

Junction temperature, T J (°C) Junction temperature, T J (°C)

Fig.9-1 Maximum safe operating area Fig.9-2 Transient thermal response curve
for 4N80A for 4N80AF
2
10
Operation in This Area is Limited by RDS(on) Operation in This Area is Limited by RDS(on)
10µs
1
10 100µs
Drain Current, l D (A)

Drain Current, l D (A)

1
10
100µs
1ms
10ms 1ms

10
0 10ms
DC 0
10
DC

*Notes:
10
-1 *Notes: 10
-1
1.T C =25°C
1.T C =25°C 2.T J =150°C
2.T J =150°C 3. Single pulse
3. Single pulse
-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10

Drain-source voltage, V DS (V) Drain-source voltage, V DS (V)

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 SEMICONDUCTOR
RoHS
4N80 Series RoHS
Nell High Power Products

Fig.10 Maximum drain current vs. case

temperature
4

Drain current, I D (A)

3

0
25 50 75 100 125 150

Case temperature, T C (°C)

Fig.11-1 Transient Thermal Response Curve for 4N80A

10 0
Thermal response, Rth(j-c) (t)

D = 0.5

0.2

0.1
PDM
10 -1
0.05
t1
0.02 t2
0.01
Notes:
Single pulse 1.R th(j-c) (t)=1.20°C/W Max.
2.Duty factor, D=t1/t2
3.T JM -Tc=P DM×R th(j-c) (t)
10 -2

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1

Square wave pulse duration , t 1 (sec.)

Fig.11-2 Transient Thermal Response Curve for 4N80AF

10 1
Thermal response, Rth(j-c) (t)

D = 0.5
10 0
0.2
0.1
PDM
0.05
t1
10 -1 0.02
t2
0.01
Notes:
Single pulse
1.R th(j-c) (t)=3.45°C/W Max.
2.Duty factor, D=t1/t2
3.T JM -Tc=P DM×R th(j-c) (t)
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1

Square wave pulse duration , t 1 (sec.)

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 SEMICONDUCTOR
RoHS
4N80 Series RoHS
Nell High Power Products

■ TEST CIRCUITS AND WAVEFORMS

Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms

D.U.T. + V GS Period
P.W.
(Driver) P.W. D=
Period
V DS
V GS =10V
-
l FM , Body Diode forward current
+ l SD
(D.U.T.)
(D.U.T di/dt
- L
l RM

Body Diode Reverse Current

RG
Body Diode Recovery dv/dt
Driver V DD V DS
* dv/dt controlled by R G (D.U.T.)
Same Type * l SD controlled by pulse period V DD
V GS * D.U.T.-Device under test
as D.U.T.

Body Diode Forward Voltage Drop

Fig.2A Switching test circuit Fig.2B Switching Waveforms

RL V DS
V DS 90%

V GS

RG

V DD
D.U.T. 10%
V GS
10V t d(ON) t d(OFF)
Pulse Width ≤ 1µs tR
Duty Factor ≤ 0.1% tF

Fig.3A Gate charge test circuit Fig.3B Gate charge waveform

V GS

Same Type as
50kΩ QG
D.U.T.
12V
10V
0.2µF 0.3µF

V DS
Q GS Q GD

V GS
D.U.T.

3mA

Charge

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 SEMICONDUCTOR
RoHS
4N80 Series RoHS
Nell High Power Products

Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching
waveforms

1 V BR(DSS)
L E AS = L l AS 2
2 V BR(DSS) - V DD
V DS

R BR(DSS)

l AS

RG V DD
l D(t)
V DS(t)
D.U.T. V DD
10V

tp
Time
tp

Case Style

TO-220AB
10.54 (0.415) MAX.

9.40 (0.370) 3.91 (0.154) 4.70 (0.185)

9.14 (0.360) 3.74 (0.148) 4.44 (0.1754)
1.39 (0.055)
2.87 (0.113)
1.14 (0.045)
2.62 (0.103)

3.68 (0.145)
3.43 (0.135)
16.13 (0.635) 15.32 (0.603)
15.87 (0.625) 14.55 (0.573)
PIN 8.89 (0.350)
1 2 3 8.38 (0.330)
4.06 (0.160) 29.16 (1.148)
3.56 (0.140) 28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045) 14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095) 0.90 (0.035)
2.65 (0.104) 0.70 (0.028)
5.20 (0.205) 0.56 (0.022)
2.45 (0.096)
4.95 (0.195) 0.36 (0.014)

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 SEMICONDUCTOR
RoHS
4N80 Series RoHS
Nell High Power Products

Case Style

TO-220F

10.6
10.4 3.4
3.1

2.8
2.6

3.7
3.2 7.1
6.7

16.0
15.8
16.4
15.4 2
1 3 10°
3.3
3.1

13.7
13.5

0.9 0.48
2.54 0.7 0.44
TYP 2.54
2.85
TYP
2.65

4.8
4.6

D (Drain)

G
(Gate)

S (Source)

All dimensions in millimeters

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