N6005/FN6005/IN6005
EN6005/N6005D/N6005B
180A 60V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used 2 D
VDSS = 60V
advanced Splite gate technology design, provided
excellent Rdson and low gate charge. Which accords with G RDS(on) (TYP)= 2.2mΩ
the RoHS standard. 1
3 S ID = 180A
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test TO-220C TO-220F TO-262
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Power tools TO-263 TO-3P TO-247
● Automotive electronics
4 Electrical Characteristics
4.1 Absolute Maximum Ratings (Tc=25℃,unless otherwise noted)
Rating
Parameter Symbol N6005 Units
N6005D
IN6005 FN6005
N6005B
EN6005
Drian-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
TC=25℃ 180 A
Continuous Drain Current ID
TC=100℃ 126 A
Pulsed Drain Current(1) IDM 720 A
Single Pulse Avalanche Energy(4) EAS 1220 mJ
Avalanche Current(4) IAS 70 A
Ta=25℃ Ptot 2 3 2 W
Power Dissipation
TC=25℃ Ptot 220 220 54 W Title
Isolation Voltage VISO / 2500 V
Size N u mb er
D
D ate: 1 0 -A p r-2 0 1 7
Junction Temperature Range
5 6
Tj -55～175 7
℃ File: D :\ Pr og ram Files \p ro tel 99 s e
Storage Temperature Range Tstg -55～175 ℃
4.2 Thermal Characteristics
Rating
Parameter Symbol N6005 Units
N6005D
IN6005 FN6005
N6005B
EN6005
Thermal Resistance,Junction to Case-sink RthJC 0.68 0.68 2.78 ℃/W
Thermal Resistance,Junction to Ambient RthJA 75 75 75 ℃/W
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4.3 Electrical Characteristics (Tc=25℃,unless otherwise noted)
Value Units
Parameter Symbol Test Condition
Min Typ Max
Off Characteristics
Drain-to-Source
BVDSS ID=250μA,VGS=0V 60 68 -- V
Breakdown Voltage
Drain-to-Source Leakage VDS=60V,VGS=0V,TC=25℃ -- -- 1 μA
IDSS
Current VDS=60V,VGS=0V,TC=125℃ -- -- 100 μA
Gate-to-Source Leakage
IGSS VGS=±20V,VDS=0V -- -- ±100 nA
Current
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V
Drain-to-Source on-state
RDS(on) VGS=10V,ID=75A -- 2.2 2.8 mΩ
Resistance
Dynamic Characteristics
Input Capacitance Ciss -- 4439 --
Output Capacitance Coss -- 1624 --
VGS=0V,VDS=35V,f=1.0MHz pF
Reverse Transfer
Crss -- 65 --
Capacitance
Gate Resisitance RG VDD=0V,VGS=0V,F=1MHz -- 2 -- Ω
Switching Characteristics
Turn-on Delay Time td(on) ID=75A, -- 19 --
Turn-on Rise Time tr VDD=35V, -- 100 --
nS
Turn-off Delay Time td(off) VGS=10V, -- 38 --
Turn-off Fall Time tf RGEN=2Ω -- 107 --
Total Gate Charge Qg -- 67 --
Gate-to-Source Charge Qgs -- 27 --
ID=75A,VDD=35V,VGS=10V nC
Gate-to-Drain(“Miller”)
Qgd -- 12 --
Charge
Drain-Source Diode Characteristics
Diode Forward Voltage(3) VSD VGS=0V,IS=30A -- 0.83 1.3 V
Diode Forward Current IS -- -- 180 A
Reverse Recovery Time(3) trr -- 62 -- nS
TJ=25℃,IF=75A,
Reverse Recovery
Qrr dIF/dt=100A/μS,VGS=0V -- 68 -- nC
Charge(3)
Notes：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: L=0.5mH,ID=70A,VDD=50V,VGATE=10V,Start TJ=25℃.
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5 Typical characteristics diagrams
Figure 1 Output Characteristics Figure 2 Transfer Characteristics
Figure 3. Threshold vs Temperature Figure 4. Rdson vs Temperature
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5 Typical characteristics diagrams(continues)
Figure 5. Power De-rating Figure 6. ID Current Derating
Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics
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6 Typical Test Circuit and Waveform
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6 Typical Test Circuit and Waveform(continues)
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7 Product Names Rules
FNEXXXX
Packaging Code
220F: F 220: Nothing
251: B 252: D
262: I 263: E
Max ON-Resistance Specification
With 2-3 Digital,For example:
04 on behalf of 4 mΩ
045 on behalf of 4.5 mΩ
Channel Polarity Code
N on behalfof N channel
Pon behalf of P channel
Rated Voltage Code
With 2 Digital,For Example:
60 on behalf of 60V
Special Function Code 80 on behalf of 80V
E on behalf of build-in ESD
Nothing on behalf of not ESD
8 Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
N6005 TO-220 N6005 Pb-free Tube 1000/box
FN6005 TO-220F FN6005 Pb-free Tube 1000/box
IN6005 TO-262 IN6005 Pb-free Tube 1000/box
EN6005 TO-263 EN6005 Pb-free Tape ＆ Reel 800/box
N6005D TO-3P N6005D Pb-free Tape ＆ Reel 600/box
N6005B TO-247 N6005B Pb-free Tape ＆ Reel 600/box
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9 Dimensions
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9 Dimensions(continues)
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EN6005/N6005D/N6005B
9 Dimensions(continues)
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10 Attentions
Jiangsu Donghai Semiconductor Technology CO.,LTD. reserves the right to change the
specification without prior notice! The customer should obtain the latest version of the information
before making the order and verify that the information is complete and up to date.
It is the responsibility of the purchaser for any failure or failure of any semiconductor product under
certain conditions. It is the responsibility of the purchaser to comply with safety standards and to
take safety measures in the system design and machine manufacturing of Donghai products in
order to avoid potential risk of failure. Injury or property damage.
Product promotion is endless, our company will be dedicated to provide customers with better
products.
11 Appendix
Revision history:
Date REV. Description Page
2020.11.05 1.0 Original
Jiangsu Donghai Semiconductor Technology CO.,LTD. Rev. 1.0
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