IGBT - Field Stop, Trench

1200 V, 40 A

FGH12040WD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd generation IGBTs offer the optimum www.onsemi.com
performance for welder applications where low conduction
and switching losses are essential.
C
Features
• Maximum Junction Temperature: TJ =175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
G
• Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM (Note 1) E
• Short Circuit Ruggedness > 5 us @ 150°C
• High Input Impedance
• This Device is Pb−Free and is RoHS Compliant
E
C
Applications G

• Only for Welder

TO−247
long leads
CASE 340CH

MARKING DIAGRAM

$Y&Z&3&K
FGH12040
WD

$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH12040WD = Specific Device Code

ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

April, 2020 − Rev. 4 FGH12040WD−F155/D
 FGH12040WD

ABSOLUTE MAXIMUM RATINGS

Symbol Description FGH75T65SHDTL4 Unit
VCES Collector to Emitter Voltage 1200 V
VGES Gate to Emitter Voltage ±25 V
Transient Gate to Emitter Voltage ±30 V
IC Collector Current TC = 25°C 80 A
TC = 100°C 40 A
ILM (Note 1) Clamped Inductive Load Current TC = 25°C 100 A
ICM (Note 2) Pulsed Collector Current 100 A
IF Diode Continuous Forward Current TC = 25°C 80 A
Diode Continuous Forward Current TC = 100°C 40 A
IFM(Note 2) Diode Maximum Forward Current 100 A
SCWT(Note 3) Short Circuit Withstand Time TC = 150°C 5 us
PD Maximum Power Dissipation TC = 25°C 428 W
TC = 100°C 214 W
TJ Operating Junction Temperature −55 to +175 °C
TSTG Storage Temperature Range −55 to +175 °C
TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. VCC = 600 V, VGE = 15 V, IC = 100 A, RG = 23 , Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. VCC = 600 V, VGE = 12 V

THERMAL CHARACTERISTICS
Symbol Parameter FGH75T65SHDTL4 Unit
RJC (IGBT) Thermal Resistance, Junction to Case 0.35 _C/W
RJC (Diode) Thermal Resistance, Junction to Case 1.4 _C/W
RJA Thermal Resistance, Junction to Ambient 40 _C/W

PACKAGE MARKING AND ORDERING INFORMATION

Packing
Part Number Top Mark Package Method Reel Size Tape Width Quantity
FGH12040WD−F155 FGH12040WD TO−247 Tube − − 30

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 1200 − − V
 BVCES /  TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 uA − 1.2 − V/°C

ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 uA

IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA

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 FGH12040WD

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Symbol Parameter Test Conditions Min Typ Max Unit
ON CHARACTERISTICS
VGE(th) G−E Threshold Voltage IC = 40 mA, VCE = VGE 4.8 6.4 8.0 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, − 2.3 2.9 V
TC = 25°C

IC = 40 A, VGE = 15 V, − 2.7 − V
TC = 175°C

DYNAMIC CHARACTERISTICS

Cies Input Capacitance VCE = 30 V, VGE = 0 V, − 2800 − pF

f = 1 MHz
Coes Output Capacitance − 105 − pF
Cres Reverse Transfer Capacitance − 60 − pF
SWITCHING CHARACTERISTICS

Td(on) Turn−On Delay Time VCC = 600 V, IC = 40 A, − 45 − ns

RG = 23 , VGE = 15 V,
Tr Rise Time Inductive Load, TC = 25°C − 70 − ns
Td(off) Turn−Off Delay Time − 560 − ns
Tf Fall Time − 15 − ns
Eon Turn−On Switching Loss − 4.1 − mJ
Eoff Turn−Off Switching Loss − 1.0 − mJ
Ets Total Switching Loss − 5.1 − mJ

Td(on) Turn−On Delay Time VCC = 600 V, IC = 40 A, − 43 − ns

RG = 23 , VGE = 15 V,
Tr Rise Time Inductive Load, TC = 175°C − 73 − ns
Td(off) Turn−Off Delay Time − 572 − ns
Tf Fall Time − 58 − ns
Eon Turn−On Switching Loss − 6.9 − mJ
Eoff Turn−Off Switching Loss − 1.9 − mJ
Ets Total Switching Loss − 8.8 − mJ

Qg Total Gate Charge VCE = 600 V, IC = 40 A, − 226 − nC

VGE = 15 V
Qge Gate to Emitter Charge − 18 − nC
Qgc Gate to Collector Charge − 155 − nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 FGH12040WD

ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

VFM Diode Forward Voltage IF = 40 A TC = 25°C − 3.6 4.7 V

TC = 175°C − 2.9 −

trr Diode Reverse Recovery Time VR = 600 V, IF = 40 A, dIF/dt = 200 A/us, − 71 − ns

TC = 25°C
Irr Diode Peak Reverse Recovery Current − 6.8 − A

Qrr Diode Reverse Recovery Charge − 242 − nC

Erec Reverse Recovery Energy VR = 600 V, IF = 40 A, dIF/dt = 200 A/s, − 690 − uJ

TC = 175°C
trr Diode Reverse Recovery Time − 500 − ns

Irr Diode Peak Reverse Recovery Current − 17 − A

Qrr Diode Reverse Recovery Charge − 4250 − nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 FGH12040WD

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Figure 4. Saturation Voltage vs. Case

Voltage Characteristics Temperature at Variant Current Level

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

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 FGH12040WD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics

Figure 9. Turn−on Characteristics vs. Figure 10. Turn−off Characteristics

Gate Resistance vs. Gate Resistance

Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current

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 FGH12040WD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 13. Turn−off Characteristics Figure 14. Switching Loss

vs. Collector Current vs. Collector Current

Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

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 FGH12040WD

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

PDM
t1
t2

Figure 21. Transient Thermal Impedance of IGBT

PDM
t1
t2

Figure 22. Transient Thermal Impedance of Diode

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019

GENERIC
MARKING DIAGRAM*

XXXXXXXXX
AYWWG XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13853G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−3LD PAGE 1 OF 1

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