Introduction on VLSI Design and Technology
Department of Electrical and Electronic Engineering
Khulna University of Engineering & Technology
Khulna-9203, Bangladesh
Professor@EEE Former:
Lecturer@1996
Ashraful G. Bhuiyan ashraf@eee.kuet.ac.bd
Dean, Faculty of EEE
Head, Dept. of EEE
B.Sc. (First class 1st) (KUET) www.kuet.ac.bd/eee/ashraf Visiting Professor (2 Times)
M.Sc.Eng. (Unv of Fukui) University of Fukui, Japan
Office:
PhD in Electronics (Japan)
EEE Building, Room # EEE218
Postdoctoral Fellow (JSPS)
Invitational Fellow (JSPS)
Senior Member, IEEE, USA
Life Fellow, IEB, Bangladesh
Course Plan/Profile
1. Course No: EE 4121 Contact/Hours: 3 Hrs/Week (Sun-Mon-Thu)
2. Course Title: VLSI Design and Technology
3. Course Teacher: Ashraful G. Bhuiyan
4. Course Content:
Fabrication and processing technology: Crystal growth, wafer preparation, photolithography,
oxidation, diffusion, ion implantation, epitaxy, metallization, etching, NMOS and CMOS
fabrication technology.
Testing and packaging: Overview of silicon semiconductor technology, power dissipation,
packaging, silicon on insulator.
Introduction to GaAs technology: Ultra-fast VLSI circuits and systems.
5. Intended Learning Outcomes (ILOs):
At the end of the course the students will be able to:
describe VLSI circuits and their application in the field electronics.
design VLSI circuits for various electronic applications.
describe fabrication and processing technology of VLSI circuits.
understand bulk growth, epitaxial growth, lithography, doping, etching, etc.
understand GaAs-based ultra-fast VLSI circuits and systems.
6. Date of Class Test: 16 May 2022 at 9.00 AM
7. Teaching Methodology/Strategy: White board, document camera and slide
presentation, Question and answer session, Assignments, spot tests and class test
Text & Reference Book:
I. Semiconductor Devices Basic Principles By: Jasprit Singh
II. Basic VLSI Design By: Douglas A. Pucknell and Kamran Eshraghian
III. Design of VLSI System A Practical Introduction By: Linda E. M. Brackenbury
IV. VLSI Technology by: S. M. SZE
V. Silicon VLSI Technology by: Plummer
A Brief History
Vacuum tubes Point contact Bipolar Junction First Integrated
• These devices Germanium Transistor (BJT) Circuit
would control the transistor • In 1950, Shockley • In 1958, Jack Kilby
flow of electrons in • 1947, John developed the first of Texas
vacuum. Baden, William Bipolar Junction Instruments
• Boeing B-29 would Shockley and Transistor (BJT)
consist of 300- • two bipolar
1000 vacuum
Watter Brattain transistors
tubes. Each of Bell labs connected on a
additional discovered this single piece of
component would silicon, thereby
reduce the initiating the
reliability and “Silicon Age”
increase trouble--
shooting time.
Scale of Integration
►Very-large-scale integration (VLSI) is the process of creating
an integrated circuit (IC) by combining hundreds of thousands
of transistors or devices into a single chip.
1958 2018
IC’s----FF’s IC’s
More than
2
Transistor 1 Billion
Transistor
Dual Core+ Core I7 (2015): 1.9 billion and 22 nm
This scale of growth has resulted from a continuous scaling of transistors
and other improvements in the Silicon manufacturing process.
Integration and Moore’s Law
► 1965: Gordon Moore(Intel cofounder) plotted transistor on each chip
► Moore's law: The number of transistors in a dense integrated circuit will
be doubled about every two years.
Integration Levels
SSI: 10 gates
MSI: 1000 gates
LSI: 10,000 gates
VLSI: > 10k gates
Chip Fabrication Processes
Crystal and Wafer Fabrication
Place for Integration
► Clean Room: a low level of environmental pollutants
► Company: Apple, IBM, AMD etc.
