LM158-N, LM258-N, LM2904-N, LM358-N

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LMx58-N Low-Power, Dual-Operational Amplifiers

1 Features 3 Description
• Available in 8-bump DSBGA chip-sized package The LM158 series consists of two independent, high
(see AN-1112, SNVA009) gain, internally frequency compensated operational
• Internally frequency compensated for unity gain amplifiers which were designed specifically to operate
• Large DC voltage gain: 100 dB from a single power supply over a wide range of
• Wide bandwidth (unity gain): 1 MHz (temperature voltages. Operation from split power supplies is also
compensated) possible and the low power supply current drain is
• Wide power supply range: independent of the magnitude of the power supply
– Single supply: 3 V to 32 V voltage.
– Or dual supplies: ±1.5 V to ±16 V Application areas include transducer amplifiers, DC
• Very low supply current drain (500 μA) essentially gain blocks and all the conventional op-amp circuits
independent of supply voltage which now can be more easily implemented in single
• Low input offset voltage: 2 mV power supply systems. For example, the LM158
• Input common-mode voltage range includes series can be directly operated off of the standard
ground 3.3-V power supply voltage which is used in digital
• Differential input voltage range equal to the power systems and will easily provide the required interface
supply voltage electronics without requiring the additional ±15-V
• Large output voltage swing power supplies.
• Unique characteristics:
– In the Linear Mode the input common-mode The LM358 and LM2904 are available in a chip-
voltage range includes ground and the output sized package (8-bump DSBGA) using TI's DSBGA
voltage can also swing to ground, even though package technology.
operated from only a single power supply Device Information
voltage PART NUMBER(1) PACKAGE BODY SIZE (NOM)
– The unity gain cross frequency is temperature
TO-CAN (8) 9.08 mm × 9.09 mm
compensated LM158-N
CDIP (8) 10.16 mm × 6.502 mm
– The input bias current is also temperature
compensated LM258-N TO-CAN (8) 9.08 mm × 9.09 mm
• Advantages: DSBGA (8) 1.31 mm × 1.31 mm
– Two internally compensated op amps LM2904-N SOIC (8) 4.90 mm × 3.91 mm
– Eliminates need for dual supplies PDIP (8) 9.81 mm × 6.35 mm
– Allows direct sensing near GND and VOUT also TO-CAN (8) 9.08 mm × 9.09 mm
goes to GND
DSBGA (8) 1.31 mm × 1.31 mm
– Compatible with all forms of logic LM358-N
SOIC (8) 4.90 mm × 3.91 mm
– Power drain suitable for battery operation
PDIP (8) 9.81 mm × 6.35 mm
2 Applications
(1) For all available packages, see the orderable addendum at
• Active filters the end of the data sheet.
• General signal conditioning and amplification
• 4-mA to 20-mA current loop transmitters

Voltage Controlled Oscillator (VCO)

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features............................................................................1 7.3 Feature Description...................................................12
2 Applications..................................................................... 1 7.4 Device Functional Modes..........................................13
3 Description.......................................................................1 8 Application and Implementation.................................. 14
4 Revision History.............................................................. 2 8.1 Application Information............................................. 14
5 Pin Configuration and Functions...................................3 8.2 Typical Applications.................................................. 14
6 Specifications.................................................................. 4 9 Power Supply Recommendations................................21
6.1 Absolute Maximum Ratings........................................ 4 10 Layout...........................................................................21
6.2 ESD Ratings............................................................... 4 10.1 Layout Guidelines................................................... 21
6.3 Recommended Operating Conditions.........................5 10.2 Layout Example...................................................... 21
6.4 Thermal Information....................................................5 11 Device and Documentation Support..........................22
6.5 Electrical Characteristics: LM158A, LM358A, 11.1 Receiving Notification of Documentation Updates.. 22
LM158, LM258.............................................................. 5 11.2 Support Resources................................................. 22
6.6 Electrical Characteristics: LM358, LM2904.................7 11.3 Trademarks............................................................. 22
6.7 Typical Characteristics................................................ 9 11.4 Electrostatic Discharge Caution.............................. 22
7 Detailed Description......................................................12 11.5 Glossary.................................................................. 22
7.1 Overview................................................................... 12 12 Mechanical, Packaging, and Orderable
7.2 Functional Block Diagram......................................... 12 Information.................................................................... 22

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (December 2014) to Revision J (March 2022) Page
• Updated the numbering format for tables, figures, and cross-references throughout the document..................1
• Corrected pin 5 (+INB) and pin 7 (OUTB) description information in the Pin Configuration and Functions
section................................................................................................................................................................ 3
• Deleted Related Links from the Device and Documentation Support section.................................................. 22

Changes from Revision H (March 2013) to Revision I (December 2014) Page

• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device
Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout
section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information
section ............................................................................................................................................................... 1

Changes from Revision G (March 2013) to Revision H (March 2013) Page

• Changed layout of National Data Sheet to TI format.......................................................................................... 1

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5 Pin Configuration and Functions

Figure 5-2. LMC Package 8-Pin TO-99 Top View

Figure 5-1. D, P, and NAB Package 8-Pin SOIC,
PDIP, and CDIP (Top View)

Figure 5-3. YPB Package 8-Pin DSBGA Top View

Table 5-1. Pin Functions

PIN
TYPE(1) DESCRIPTION
NAME D/P/LMC YPB
OUTA 1 A1 O Output, channel A
–INA 2 B1 I Inverting input, channel A
+INA 3 C1 I Non-inverting input, channel A
GND /
4 C2 P Ground for single-supply configurations. Negative supply for dual-supply configurations.
V–
+INB 5 C3 I Non-inverting input, channel B
–INB 6 B3 I Inverting input, channel B
OUTB 7 A3 O Output, channel B
V+ 8 A2 P Positive supply

(1) Signal Types: I = Input, O = Output, I/O = Input or Output, P = Power

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6 Specifications
6.1 Absolute Maximum Ratings
See (1) (2) (3).
LM158, LM258,
LM358, LM158A, LM2904
LM258A, LM358A UNIT

MIN MAX MIN MAX

Supply Voltage, V+ 32 26 V
Differential Input Voltage 32 26 V
Input Voltage −0.3 32 −0.3 26 V
Power Dissipation(4) PDIP (P) 830 830 mW
TO-99 (LMC) 550 mW
SOIC (D) 530 530 mW
DSBGA (YPB) 435 mW
Output Short-Circuit V+ ≤ 15 V and TA = 25°C Continuous Continuous
to GND (One
Amplifier)(5)
Input Current (VIN < −0.3V)(6) 50 50 mA
Temperature −55 125 °C
PDIP Package (P): Soldering (10 seconds) 260 260 °C
SOIC Package (D) Vapor Phase (60 215 215 °C
seconds)
Infrared (15 seconds) 220 220 °C
Lead Temperature PDIP (P): (Soldering, 10 seconds) 260 260 °C
TO-99 (LMC): (Soldering, 10 seconds) 300 300 °C
Storage temperature, Tstg −65 150 −65 150 °C

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions
indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured
specifications and the test conditions, see the Electrical Characteristics.
(2) Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158 military specifications.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(4) For operating at high temperatures, the LM358/LM358A, LM2904 must be derated based on a 125°C maximum junction temperature
and a thermal resistance of 120°C/W for PDIP, 182°C/W for TO-99, 189°C/W for SOIC package, and 230°C/W for DSBGA, which
applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM258/LM258A and LM158/LM158A can
be derated based on a +150°C maximum junction temperature. The dissipation is the total of both amplifiers—use external resistors,
where possible, to allow the amplifier to saturate or to reduce the power which is dissipated in the integrated circuit.
(5) Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15
V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result
from simultaneous shorts on all amplifiers.
(6) This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction
of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there
is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go
to the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive
and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than −0.3 V (at
25°C).

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±250 V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

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6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply Voltage (V+ - V-):LM158. LM258, LM358 3 (±1.5) 32 (±16) V
Supply Voltage (V+ - V-):LM2904 3 (±1.5) 26 (±13) V
Operating Temperature: LM158 -55 125 °C
Operating Temperature: LM258 -25 85 °C
Operating Temperature: LM358 0 70 °C
Operating Temperature: LM2904 -40 85 °C

6.4 Thermal Information

LM158-N, LM158-N LM2904-N, LM358-N
LM258-N,
LM358-N
THERMAL METRIC(1) UNIT
LMC NAB YPB D P
8 PINS
RθJA Junction-to-ambient thermal resistance 155 132 230 189 120 °C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: LM158A, LM358A, LM158, LM258

V+ = +5.0 V, See(2), unless otherwise stated
LM158A LM358A LM158, LM258
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Input Offset Voltage See(3), TA = 25°C 1 2 2 3 2 5 mV
Input Bias Current IIN(+) or IIN(−), TA = 25°C, 20 50 45 100 45 150 nA
VCM = 0 V,(4)
Input Offset Current IIN(+) − IIN(−), VCM = 0V, TA = 2 10 5 30 3 30
nA
25°C
Input Common-Mode V+ = 30 V,(5)
Voltage Range (LM2904, V+ = 26V), TA = 0 V+−1.5 0 V+−1.5 0 V+−1.5 V
25°C
Supply Current Over Full Temperature Range
RL = ∞ on All Op Amps
V+ = 30V (LM2904 V+ = 26V) 1 2 1 2 1 2 mA
V+ = 5V 0.5 1.2 0.5 1.2 0.5 1.2 mA
Large Signal Voltage Gain V+ = 15 V, TA = 25°C,
RL ≥ 2 kΩ, (For VO = 1 V to 11 50 100 25 100 50 100 V/mV
V)
Common-Mode TA = 25°C,
70 85 65 85 70 85 dB
Rejection Ratio VCM = 0 V to V+−1.5 V
Power Supply V+ = 5 V to 30 V
Rejection Ratio (LM2904, V+ = 5 V to 26 V), 65 100 65 100 65 100 dB
TA = 25°C
Power Supply V+ = 5 V to 30 V
Rejection Ratio (LM2904, V+ = 5 V to 26 V), 65 100 65 100 65 100 dB
TA = 25°C
Amplifier-to-Amplifier f = 1 kHz to 20 kHz, TA =
−120 −120 −120 dB
Coupling 25°C (Input Referred), See(6)

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6.5 Electrical Characteristics: LM158A, LM358A, LM158, LM258 (continued)

V+ = +5.0 V, See(2), unless otherwise stated
LM158A LM358A LM158, LM258
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Output Current Source VIN + = 1 V,
VIN − = 0 V,
20 40 20 40 20 40 mA
V+ = 15 V,
VO = 2 V, TA = 25°C
Sink VIN − = 1 V, VIN + = 0 V
V+ = 15 V, TA = 25°C, 10 20 10 20 10 20 mA
VO = 2 V
VIN − = 1 V,
VIN + = 0 V
12 50 12 50 12 50 μA
TA = 25°C, VO = 200 mV,
V+ = 15 V
Short Circuit to Ground TA = 25°C, See(1), V+ = 15 V 40 60 40 60 40 60 mA
Input Offset Voltage See(3) 4 5 7 mV
Input Offset Voltage Drift RS = 0Ω 7 15 7 20 7 μV/°C
Input Offset Current IIN(+) − IIN(−) 30 75 100 nA
Input Offset Current Drift RS = 0Ω 10 200 10 300 10 pA/°C
Input Bias Current IIN(+) or IIN(−) 40 100 40 200 40 300 nA
Input Common-Mode V+ = 30 V, See(5) (LM2904, V+
0 V+−2 0 V+−2 0 V+−2 V
Voltage Range = 26 V)
Large Signal Voltage Gain V+ = +15 V
(VO = 1 V to 11 V) 25 15 25 V/mV
RL ≥ 2 kΩ
Output VOH V+ = +30 V RL = 2 26 26 26 V
kΩ
Voltage RL = 27 28 27 28 27 28 V
(LM2904, V+ = 26 V)
10 kΩ
Swing VOL V+ = 5V, RL = 10 kΩ 5 20 5 20 5 20 mV
Output Current Source + −
VIN = +1 V, VIN = 0 V,
10 20 10 20 10 20 mA
V+ = 15 V, VO = 2 V
Sink VIN − = +1 V, VIN + = 0 V,
10 15 5 8 5 8 mA
V+ = 15 V, VO = 2 V

(1) Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15
V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result
from simultaneous shorts on all amplifiers.
(2) These specifications are limited to –55°C ≤ TA ≤ +125°C for the LM158/LM158A. With the LM258/LM258A, all temperature
specifications are limited to −25°C ≤ TA ≤ 85°C, the LM358/LM358A temperature specifications are limited to 0°C ≤ TA ≤ 70°C,
and the LM2904 specifications are limited to –40°C ≤ TA ≤ 85°C.
(3) VO ≃ 1.4 V, RS = 0 Ω with V+ from 5 V to 30 V; and over the full input common-mode range (0 V to V+ −1.5 V) at 25°C. For LM2904, V+
from 5 V to 26 V.
(4) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the input lines.
(5) The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V (at 25°C). The
upper end of the common-mode voltage range is V+ −1.5 V (at 25°C), but either or both inputs can go to 32 V without damage (26 V
for LM2904), independent of the magnitude of V+.
(6) Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts.
This typically can be detected as this type of capacitance increases at higher frequencies.

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6.6 Electrical Characteristics: LM358, LM2904

V+ = +5.0 V, See(2), unless otherwise stated
LM358 LM2904
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
Input Offset Voltage See(3) , TA = 25°C 2 7 2 7 mV
Input Bias Current IIN(+) or IIN(−), TA = 25°C,
45 250 45 250 nA
VCM = 0 V, See(4)
Input Offset Current IIN(+) − IIN(−), VCM = 0 V, TA = 25°C 5 50 5 50 nA
Input Common-Mode V+ = 30 V, See(5)
0 V+−1.5 0 V+−1.5 V
Voltage Range (LM2904, V+ = 26 V), TA = 25°C
Supply Current Over Full Temperature Range
RL = ∞ on All Op Amps
V+ = 30 V (LM2904 V+ = 26 V) 1 2 1 2 mA
V+ = 5 V 0.5 1.2 0.5 1.2 mA
Large Signal Voltage V+ = 15V, TA = 25°C,
Gain RL ≥ 2 kΩ, (For VO = 1 V to 11 V) 25 100 25 100 V/mV
Common-Mode TA = 25°C,
Rejection Ratio 65 85 50 70 dB
VCM = 0 V to V+−1.5 V
Power Supply V+ = 5 V to 30 V 65 100 50 100 dB
Rejection Ratio
(LM2904, V+ = 5 V to 26 V), TA = 25°C
Amplifier-to-Amplifier Coupling f = 1 kHz to 20 kHz, TA = 25°C
−120 −120 dB
(Input Referred), See(6)
Output Current Source VIN + = 1 V,
VIN − = 0 V,
20 40 20 40 mA
V+ = 15 V,
VO = 2 V, TA = 25°C
Sink VIN − = 1 V, VIN + = 0 V
V+ = 15V, TA = 25°C, 10 20 10 20 mA
VO = 2 V
VIN − = 1 V,
VIN + = 0 V
12 50 12 50 μA
TA = 25°C, VO = 200 mV,
V+ = 15 V
Short Circuit to Ground TA = 25°C, See(1), V+ = 15 V 40 60 40 60 mA
Input Offset Voltage See(3) 9 10 mV
Input Offset Voltage Drift RS = 0 Ω 7 7 μV/°C
Input Offset Current IIN(+) − IIN(−) 150 45 200 nA
Input Offset Current Drift RS = 0 Ω 10 10 pA/°C
Input Bias Current IIN(+) or IIN(−) 40 500 40 500 nA
Input Common-Mode V+ = 30 V, See(5) (LM2904, V+ = 26 V)
0 V+−2 0 V+ −2 V
Voltage Range
Large Signal Voltage Gain V+ = +15 V
(VO = 1 V to 11 V) 15 15 V/mV
RL ≥ 2 kΩ
Output VOH V+ = 30 V RL = 2 kΩ 26 22 V
Voltage (LM2904, V+ = 26 V) RL = 10 kΩ 27 28 23 24 V
Swing VOL V+ = 5 V, RL = 10 kΩ 5 20 5 100 mV

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6.6 Electrical Characteristics: LM358, LM2904 (continued)

V+ = +5.0 V, See(2), unless otherwise stated
LM358 LM2904
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
Output Current Source VIN + = 1 V, VIN − = 0 V,
10 20 10 20 mA
V+ = 15 V, VO = 2 V
Sink VIN − = 1 V, VIN + = 0 V,
5 8 5 8 mA
V+ = 15 V, VO = 2 V

(1) Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15
V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result
from simultaneous shorts on all amplifiers.
(2) These specifications are limited to –55°C ≤ TA ≤ +125°C for the LM158/LM158A. With the LM258/LM258A, all temperature
specifications are limited to −25°C ≤ TA ≤ 85°C, the LM358/LM358A temperature specifications are limited to 0°C ≤ TA ≤ 70°C,
and the LM2904 specifications are limited to –40°C ≤ TA ≤ 85°C.
(3) VO ≃ 1.4 V, RS = 0 Ω with V+ from 5 V to 30 V; and over the full input common-mode range (0 V to V+ −1.5 V) at 25°C. For LM2904, V+
from 5 V to 26 V.
(4) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the input lines.
(5) The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V (at 25°C). The
upper end of the common-mode voltage range is V+ −1.5 V (at 25°C), but either or both inputs can go to 32 V without damage (26 V
for LM2904), independent of the magnitude of V+.
(6) Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts.
This typically can be detected as this type of capacitance increases at higher frequencies.

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6.7 Typical Characteristics

Figure 6-1. Input Voltage Range Figure 6-2. Input Current

Figure 6-3. Supply Current Figure 6-4. Voltage Gain

Figure 6-5. Open Loop Frequency Response Figure 6-6. Common-Mode Rejection Ratio

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6.7 Typical Characteristics (continued)

Figure 6-7. Voltage Follower Pulse Response Figure 6-8. Voltage Follower Pulse Response (Small Signal)

Figure 6-9. Large Signal Frequency Response Figure 6-10. Output Characteristics Current Sourcing

Figure 6-11. Output Characteristics Current Sinking Figure 6-12. Current Limiting

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6.7 Typical Characteristics (continued)

Figure 6-13. Input Current (LM2902 Only) Figure 6-14. Voltage Gain (LM2902 Only)

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7 Detailed Description
7.1 Overview
The LM158 series are operational amplifiers which can operate with only a single power supply voltage, have
true-differential inputs, and remain in the linear mode with an input common-mode voltage of 0 VDC. These
amplifiers operate over a wide range of power supply voltage with little change in performance characteristics. At
25°C amplifier operation is possible down to a minimum supply voltage of 2.3 VDC.
Large differential input voltages can be easily accommodated and, as input differential voltage protection diodes
are not needed, no large input currents result from large differential input voltages. The differential input voltage
may be larger than V+ without damaging the device. Protection should be provided to prevent the input voltages
from going negative more than −0.3 VDC (at 25°C). An input clamp diode with a resistor to the IC input terminal
can be used.
7.2 Functional Block Diagram
+
V

IN – _
OUT
+
IN +

–
V
Copyright © 2016,
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Figure 7-1. (Each Amplifier)

7.3 Feature Description

The amplifier's differential inputs consist of a non-inverting input (+IN) and an inverting input (–IN). The amplifer
amplifies only the difference in voltage between the two inpus, which is called the differential input voltage. The
output voltage of the op-amp Vout is given by Equation 1:

VOUT = AOL (IN+ - IN-) (1)

where
• AOL is the open-loop gain of the amplifier, typically around 100dB (100,000x, or 10uV per Volt).
To reduce the power supply current drain, the amplifiers have a class A output stage for small signal levels
which converts to class B in a large signal mode. This allows the amplifiers to both source and sink large output
currents. Therefore both NPN and PNP external current boost transistors can be used to extend the power
capability of the basic amplifiers. The output voltage needs to raise approximately 1 diode drop above ground to
bias the on-chip vertical PNP transistor for output current sinking applications.
For ac applications, where the load is capacitively coupled to the output of the amplifier, a resistor should be
used, from the output of the amplifier to ground to increase the class A bias current and prevent crossover
distortion. Where the load is directly coupled, as in dc applications, there is no crossover distortion.
Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin. Values
of 50 pF can be accommodated using the worst-case non-inverting unity gain connection. Large closed loop
gains or resistive isolation should be used if larger load capacitance must be driven by the amplifier.
The bias network of the LM158 establishes a drain current which is independent of the magnitude of the power
supply voltage over the range of 3 VDC to 30 VDC.
Output short circuits either to ground or to the positive power supply should be of short time duration. Units can
be destroyed, not as a result of the short circuit current causing metal fusing, but rather due to the large increase
in IC chip power dissipation which will cause eventual failure due to excessive junction temperatures. Putting

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direct short-circuits on more than one amplifier at a time will increase the total IC power dissipation to destructive
levels, if not properly protected with external dissipation limiting resistors in series with the output leads of the
amplifiers. The larger value of output source current which is available at 25°C provides a larger output current
capability at elevated temperatures (see Typical Characteristics) than a standard IC op amp.
7.4 Device Functional Modes

Figure 7-2. Schematic Diagram

The circuits presented in the Typical Single-Supply Applications emphasize operation on only a single power
supply voltage. If complementary power supplies are available, all of the standard op-amp circuits can be used.
In general, introducing a pseudo-ground (a bias voltage reference of V+/2) will allow operation above and below
this value in single power supply systems. Many application circuits are shown which take advantage of the wide
input common-mode voltage range which includes ground. In most cases, input biasing is not required and input
voltages which range to ground can easily be accommodated.

Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 13

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LM158-N, LM258-N, LM2904-N, LM358-N
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8 Application and Implementation

Note
Information in the following applications sections is not part of the TI component specification, and
TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.

8.1 Application Information

The LM158 family bring performance, economy, and ease-of-use to a wide variety of op-amp applications.
8.2 Typical Applications
8.2.1 Noninverting DC Gain
Figure 8-1 shows a high input impedance non-inverting circuit. This circuit gives a closed-loop gain equal to
the ratio of the sum of R1 and R2 to R1 and a closed-loop 3 dB bandwidth equal to the amplifier unity-gain
frequency divided by the closed-loop gain. This design has the benefit of a very high input impedance, which
is equal to the differential input impedance multiplied by loop gain. (Open loop gain/Closed loop gain.) In DC
coupled applications, input impedance is not as important as input current and its voltage drop across the source
resistance. Note that the amplifier output will go into saturation if the input is allowed to float. This may be
important if the amplifier must be switched from source to source.

*R not needed due to temperature independent IIN

Figure 8-1. Non-Inverting DC Gain (0-V Output)

8.2.1.1 Design Requirements

For this example application, the supply voltage is +5V, and 100x±5% of noninverting gain is necessary. Signal
input impedance is approx 10kΩ.
8.2.1.2 Detailed Design Procedure
Using the equation for a non-inverting amplifier configuration ; G = 1+ R2/R1, set R1 to 10kΩ, and R2 to 99x the
value of R1, which would be 990kΩ. Replacing the 990kΩ with a 1MΩ will result in a gain of 101, which is within
the desired gain tolerance.
The gain-frequency characteristic of the amplifier and its feedback network must be such that oscillation does
not occur. To meet this condition, the phase shift through amplifier and feedback network must never exceed
180° for any frequency where the gain of the amplifier and its feedback network is greater than unity. In practical
applications, the phase shift should not approach 180° since this is the situation of conditional stability. Obviously
the most critical case occurs when the attenuation of the feedback network is zero.

14 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated

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 LM158-N, LM258-N, LM2904-N, LM358-N
www.ti.com SNOSBT3J – JANUARY 2000 – REVISED MARCH 2022

8.2.1.3 Application Curve

Figure 8-2. Transfer Curve for Non-Inverting Configuration

8.2.2 System Examples

8.2.2.1 Typical Single-Supply Applications

(V+ = 5.0 VDC)

Where: VO = V1 + V2 − V3 − V4 VO = 0 VDC for VIN = 0 VDC

(V1 + V2) ≥ (V3 + V4) to keep VO > 0 VDC AV = 10

Figure 8-3. DC Summing Amplifier Figure 8-4. Power Amplifier

(VIN'S ≥ 0 VDC and VO ≥ 0 VDC)

Figure 8-6. Lamp Driver

fo = 1 kHz
Q = 50
Av = 100 (40 dB)

Figure 8-5. “BI-QUAD” RC Active Bandpass Filter

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Figure 8-7. LED Driver

Figure 8-8. Driving TTL

VO = VIN

Figure 8-9. Voltage Follower

Figure 8-10. Pulse Generator

Figure 8-11. Squarewave Oscillator

Figure 8-12. Pulse Generator

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 LM158-N, LM258-N, LM2904-N, LM358-N
www.ti.com SNOSBT3J – JANUARY 2000 – REVISED MARCH 2022

HIGH ZIN
LOW ZOUT

Figure 8-13. Low Drift Peak Detector IO = 1 amp/volt VIN

(Increase RE for IO small)

Figure 8-14. High Compliance Current Sink

Figure 8-15. Comparator with Hysteresis *WIDE CONTROL VOLTAGE RANGE: 0 VDC ≤ VC ≤ 2 (V+
−1.5VDC)

Figure 8-16. Voltage Controlled Oscillator (VCO)

Figure 8-17. Ground Referencing a Differential

Input Signal fo = 1 kHz
Q=1
AV = 2

Figure 8-18. DC Coupled Low-Pass RC Active Filter

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fo = 1 kHz
Q = 25

Figure 8-19. Bandpass Active Filter

Figure 8-20. Photo Voltaic-Cell Amplifier

Figure 8-21. Using Symmetrical Amplifiers to Reduce Input Current (General Concept)

Figure 8-22. Fixed Current Sources

18 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated

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 LM158-N, LM258-N, LM2904-N, LM358-N
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*(Increase R1 for IL small)

VL ≤ V+ −2V

Figure 8-23. Current Monitor

Figure 8-24. AC Coupled Inverting Amplifier

Av = 11 (As Shown)

Figure 8-25. AC Coupled Non-Inverting Amplifier

Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 19

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N
LM158-N, LM258-N, LM2904-N, LM358-N
SNOSBT3J – JANUARY 2000 – REVISED MARCH 2022 www.ti.com

Figure 8-26. High Input Z, DC Differential Amplifier

Figure 8-27. Bridge Current Amplifier

Figure 8-28. High Input Z Adjustable-Gain DC Instrumentation Amplifier

20 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated

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 LM158-N, LM258-N, LM2904-N, LM358-N
www.ti.com SNOSBT3J – JANUARY 2000 – REVISED MARCH 2022

9 Power Supply Recommendations

For proper operation, the power supplies must be properly decoupled. For decoupling the supply pins it is
suggested that 10-nF capacitors be placed as close as possible to the op-amp power supply pins. For single
supply, place a capacitor between V+ and V– supply leads. For dual supplies, place one capacitor between V+
and ground, and one capacitor between V– and ground.
Precautions should be taken to insure that the power supply for the integrated circuit never becomes reversed
in polarity or that the unit is not inadvertently installed backwards in a test socket as an unlimited current surge
through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a
destroyed unit.
10 Layout
10.1 Layout Guidelines
For single-ended supply configurations, the V+ pin should be bypassed to ground with a low ESR capacitor.
The optimum placement is closest to the V+ pin. Care should be taken to minimize the loop area formed by the
bypass capacitor connection between V+ and ground. The ground pin should be connected to the PCB ground
plane at the pin of the device. The feedback components should be placed as close to the device as possible to
minimize stray parasitics.
For dual supply configurations, both the V+ pin and V- pin should be bypassed to ground with a low ESR
capacitor. The optimum placement is closest to the corresponding supply pin. Care should be taken to minimize
the loop area formed by the bypass capacitor connection between V+ or V- and ground. The feedback
components should be placed as close to the device as possible to minimize stray parasitics.
For both configurations, as ground plane underneath the device is recommended.
10.2 Layout Example

Figure 10-1. Layout Example

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11 Device and Documentation Support

11.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.

11.5 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

22 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

 PACKAGE OPTION ADDENDUM

www.ti.com 18-Nov-2024

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

LM158AH ACTIVE TO-99 LMC 8 500 Non-RoHS Call TI Level-1-NA-UNLIM -55 to 125 ( LM158AH, LM158AH Samples
& Green )
LM158AH/NOPB ACTIVE TO-99 LMC 8 500 RoHS & Green Call TI Level-1-NA-UNLIM -55 to 125 ( LM158AH, LM158AH Samples
)
LM158H ACTIVE TO-99 LMC 8 500 Non-RoHS Call TI Level-1-NA-UNLIM -55 to 125 ( LM158H, LM158H) Samples
& Green
LM158H/NOPB ACTIVE TO-99 LMC 8 500 RoHS & Green Call TI Level-1-NA-UNLIM -55 to 125 ( LM158H, LM158H) Samples

LM158J ACTIVE CDIP NAB 8 40 Non-RoHS Call TI Level-1-NA-UNLIM -55 to 125 LM158J Samples
& Green
LM258H ACTIVE TO-99 LMC 8 500 Non-RoHS Call TI Level-1-NA-UNLIM -25 to 85 ( LM258H, LM258H) Samples
& Green
LM258H/NOPB ACTIVE TO-99 LMC 8 500 RoHS & Green Call TI Level-1-NA-UNLIM -25 to 85 ( LM258H, LM258H) Samples

LM2904ITP/NOPB ACTIVE DSBGA YPB 8 250 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 A Samples
09
LM2904ITPX/NOPB ACTIVE DSBGA YPB 8 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 A Samples
09
LM2904M/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM Samples
2904M
LM2904MX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 LM Samples
2904M
LM2904N/NOPB ACTIVE PDIP P 8 40 RoHS & Green NIPDAU Level-1-NA-UNLIM -40 to 85 LM Samples
2904N
LM358AM/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM 0 to 70 LM Samples
358AM
LM358AMX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM 0 to 70 LM Samples
358AM
LM358AN/NOPB ACTIVE PDIP P 8 40 RoHS & Green NIPDAU Level-1-NA-UNLIM 0 to 70 LM Samples
358AN
LM358H/NOPB ACTIVE TO-99 LMC 8 500 RoHS & Green Call TI Level-1-NA-UNLIM 0 to 70 ( LM358H, LM358H) Samples

LM358M/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM 0 to 70 LM Samples

358M

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 18-Nov-2024

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

LM358MX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM 0 to 70 LM Samples

358M
LM358N/NOPB ACTIVE PDIP P 8 40 RoHS & Green NIPDAU Level-1-NA-UNLIM 0 to 70 LM Samples
358N
LM358TP/NOPB ACTIVE DSBGA YPB 8 250 RoHS & Green SNAGCU Level-1-260C-UNLIM 0 to 70 A Samples
07
LM358TPX/NOPB ACTIVE DSBGA YPB 8 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM 0 to 70 A Samples
07

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

Addendum-Page 2
 PACKAGE OPTION ADDENDUM

www.ti.com 18-Nov-2024

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF LM2904-N :

• Automotive : LM2904-Q1
• Enhanced Product : LM2904-EP

NOTE: Qualified Version Definitions:

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
• Enhanced Product - Supports Defense, Aerospace and Medical Applications

Addendum-Page 3
 PACKAGE MATERIALS INFORMATION

www.ti.com 26-Oct-2024

TAPE AND REEL INFORMATION

REEL DIMENSIONS TAPE DIMENSIONS

K0 P1

B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2 Q1 Q2

Q3 Q4 Q3 Q4 User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM2904ITP/NOPB DSBGA YPB 8 250 178.0 8.4 1.5 1.5 0.66 4.0 8.0 Q1
LM2904ITPX/NOPB DSBGA YPB 8 3000 178.0 8.4 1.5 1.5 0.66 4.0 8.0 Q1
LM2904MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM358AMX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM358MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM358TP/NOPB DSBGA YPB 8 250 178.0 8.4 1.5 1.5 0.66 4.0 8.0 Q1
LM358TPX/NOPB DSBGA YPB 8 3000 178.0 8.4 1.5 1.5 0.66 4.0 8.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 26-Oct-2024

TAPE AND REEL BOX DIMENSIONS

Width (mm)
H
W

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM2904ITP/NOPB DSBGA YPB 8 250 208.0 191.0 35.0
LM2904ITPX/NOPB DSBGA YPB 8 3000 208.0 191.0 35.0
LM2904MX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM358AMX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM358MX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM358TP/NOPB DSBGA YPB 8 250 208.0 191.0 35.0
LM358TPX/NOPB DSBGA YPB 8 3000 208.0 191.0 35.0

Pack Materials-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 26-Oct-2024

TUBE

T - Tube
height L - Tube length

W - Tube
width

B - Alignment groove width

*All dimensions are nominal

Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
LM158J NAB CDIP 8 40 502 14 11938 4.32
LM2904M/NOPB D SOIC 8 95 495 8 4064 3.05
LM2904N/NOPB P PDIP 8 40 502 14 11938 4.32
LM358AM/NOPB D SOIC 8 95 495 8 4064 3.05
LM358AN/NOPB P PDIP 8 40 502 14 11938 4.32
LM358M/NOPB D SOIC 8 95 495 8 4064 3.05
LM358N/NOPB P PDIP 8 40 502 14 11938 4.32

Pack Materials-Page 3
 MECHANICAL DATA
NAB0008A

J08A (Rev M)

www.ti.com
 PACKAGE OUTLINE
LMC0008A TO-CAN - 5.72 mm max height
TRANSISTOR OUTLINE

.305-.335
[7.75-8.51]

.165-.185
.040 MAX [4.19-4.70] .225
[1.02] MAX
[5.72]

.010-.040
UNCONTROLLED [0.25-1.02]
LEAD DIA
.055[1.397] MAX SEATING PLANE

.500 MIN
[12.7]

8X .016-.021
[0.41-0.53]
.010 [0.25] C A

.110-.160
[2.79-4.06]

.100
[2.54]
4
5 .335-.370
3 [8.51-9.40]

.200 6
[5.08]
2
A
7
1
8
.029-.045
[0.74-1.14]

.028-.034
45 TYP [0.71-0.86]

4220610/B 09/2024

NOTES:

1. All linear dimensions are in inches [millimeters]. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Pin numbers shown for reference only. Numbers may not be marked on package.
4. Reference JEDEC registration MO-002/TO-99.

www.ti.com
 EXAMPLE BOARD LAYOUT
LMC0008A TO-CAN - 5.72 mm max height
TRANSISTOR OUTLINE

METAL
8X ( .031) VIA
( .055) 8 [0.8]
[1.4]

7 7X ( .055)
1 [1.4]
.003 MAX METAL
[0.07]
ALL AROUND

(R.002 ) TYP
[0.05] 7X SOLDER MASK
OPENING
SOLDER MASK
OPENING

2 6

7X .003 MAX
[0.07]
(45 ) TYP ALL AROUND

5
3

( .200 )
[5.08]
4

LAND PATTERN EXAMPLE

NON-SOLDER MASK DEFINED
SCALE: 12X

4220610/B 09/2024

www.ti.com
 PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT

SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1

.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]

4X (0 -15 )

4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4

.005-.010 TYP
[0.13-0.25]

4X (0 -15 )

SEE DETAIL A
.010
[0.25]

.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]

4214825/C 02/2019

NOTES:

1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.

www.ti.com
 EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8

8X (.024)
[0.6] SYMM

(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE:8X

SOLDER MASK SOLDER MASK

METAL METAL UNDER
OPENING OPENING SOLDER MASK

EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED

SOLDER MASK DETAILS

4214825/C 02/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
 EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )
[1.55] SYMM

1
8

8X (.024)
[0.6] SYMM

(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]

SOLDER PASTE EXAMPLE

BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X

4214825/C 02/2019

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.

www.ti.com
 PACKAGE OUTLINE
YPB0008 SCALE 9.000
DSBGA - 0.575 mm max height
DIE SIZE BALL GRID ARRAY

B E A

BALL A1
CORNER

0.575 MAX C

SEATING PLANE
0.15 BALL TYP
0.11 0.05 C

1
TYP

1
TYP SYMM
B
D: Max = 1.337 mm, Min =1.276 mm
0.5
TYP E: Max = 1.337 mm, Min =1.276 mm
A

0.18 1 2 3
8X
0.16
0.015 C A B
0.5
TYP
SYMM

4215100/B 07/2016

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.

www.ti.com
 EXAMPLE BOARD LAYOUT
YPB0008 DSBGA - 0.575 mm max height
DIE SIZE BALL GRID ARRAY

(0.5)
TYP
8X ( 0.16)
1 2 3

(0.5) TYP

SYMM
B

SYMM

LAND PATTERN EXAMPLE

SCALE:40X

( 0.16) 0.05 MAX METAL UNDER

METAL 0.05 MIN
SOLDER MASK

SOLDER MASK ( 0.16)

OPENING SOLDER MASK
OPENING
NON-SOLDER MASK
DEFINED SOLDER MASK
(PREFERRED) DEFINED

SOLDER MASK DETAILS

NOT TO SCALE

4215100/B 07/2016

NOTES: (continued)

3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).

www.ti.com
 EXAMPLE STENCIL DESIGN
YPB0008 DSBGA - 0.575 mm max height
DIE SIZE BALL GRID ARRAY

(0.5) TYP
(R0.05) TYP
8X ( 0.3)
1 2 3

(0.5) TYP

SYMM
B

METAL
TYP

SYMM

SOLDER PASTE EXAMPLE

BASED ON 0.125mm THICK STENCIL
SCALE:50X

4215100/B 07/2016

NOTES: (continued)

4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.

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