Digitron Semiconductors: 2N3027-2N3032 0.5 AMP Silicon Controlled Rectifier

The document provides specifications for the 2N3027-2N3032 series of 0.5 AMP silicon controlled rectifiers, including maximum ratings, electrical characteristics, and mechanical characteristics. It details parameters such as repetitive peak off-state voltage, gate trigger current, and temperature ranges for operation. Additionally, it includes information on RoHS compliance and high reliability screening options.

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Digitron Semiconductors: 2N3027-2N3032 0.5 AMP Silicon Controlled Rectifier

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DIGITRON SEMICONDUCTORS

2N3027-2N3032 0.5 AMP SILICON CONTROLLED RECTIFIER

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS
2N3027 2N3028 2N3029
Characteristic Symbol
2N3030 2N3031 2N3032
Repetitive peak off-state voltage VDRM 30V 60V 100V
Repetitive peak reverse voltage VRRM 30V 60V 100V
DC on-state current
100°C case IT 500mA
75°C ambient 250mA
Repetitive peak on-state current ITRM 30A
Surge (non-repetitive) on-state current
50ms ITSM 5A
8ms 8A
Peak gate current IGM 250mA
Average gate current IG(AV) 25mA
Reverse gate voltage VGR 5V
Reverse gate current IGR 3mA
Storage temperature range Tstg -65°C to +200°C
Operating temperature range TJ -65°C to +150°C
Blocking voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used.

ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3027-2N3029)

Parameter Symbol Min. Typ. Max. Unit Test Condition
25°C tests
Off state current IDRM - 0.002 0.100 µA RGK = 1KΩ, VDRM = rating
Reverse current IRRM - 0.002 0.100 µA RGK = 1KΩ, VRRM = rating
Reverse gate voltage VGR 5 8 - V IGR = 0.1mA
Gate trigger current IGT -5 8 200 µA RGS = 10KΩ, VD = 5V
Gate trigger voltage VGT 0.400 0.550 0.800 V RGS = 100Ω, VD = 5V
On-state voltage VT 0.800 1.200 1.500 V IT = 1A (pulse test)
Holding current IH 0.300 0.700 5.000 mA RGK = 1KΩ, VD = 5V
Off-state voltage – critical rate of rise 30 60 - RGK = 1KΩ, VD = 30V (2N3027)
dv/dt 15 30 - V/µs RGK = 1KΩ, VD = 60V (2N3028)
10 25 - RGK = 1KΩ, VD = 100V (2N3029)
Gate trigger-on pulse width tpg(on) - 0.070 0.200 µs IG = 10mA, IT = 1A, VD = 30V
Delay time td - 0.080 - µs IG = 10mA, IT = 1A, VD = 30V
Rise time tr - 0.040 - µs IG = 10mA, IT = 1A, VD = 30V
Circuit commutated turn-off time tg - 0.700 2.000 µs IT = 1A, IR = 1A, RGK = 1KΩ
150°C Tests
High temperature off-state current IDRM - 2 20 µA RGK = 1KΩ, VDRM = rating
High temperature reverse current IRRM - 20 50 µA RGK = 1KΩ, VRRM = rating
High temperature gate trigger voltage VGT 0.100 0.150 0.600 V RGS = 100Ω, VD = 5V
High temperature holding current IH 0.050 0.200 1.000 mA RGK = 1KΩ, VD = 5V
-65°C Tests
Low temperature gate trigger voltage VGT 0.600 0.750 1.100 V RGS = 100Ω, VD = 5V
Low temperature gate trigger current IGT 0 150 1.200 mA RGS = 10KΩ, VD = 5V
Low temperature holding current IH 0.500 3.500 10 mA RGK = 1KΩ, VD = 5V
144 Market Street phone +1.908.245-7200 sales@digitroncorp.com
Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130116
DIGITRON SEMICONDUCTORS
2N3027-2N3032 0.5 AMP SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3030-2N3032)
Parameter Symbol Min. Typ. Max. Unit Test Condition
25°C tests
Off state current IDRM - 0.002 0.100 µA RGK = 1KΩ, VDRM = rating
Reverse current IRRM - 0.002 0.100 µA RGK = 1KΩ, VRRM = rating
Reverse gate voltage VGR 5 8 - V IGR = 0.1mA
Gate trigger current IGT -5 20 µA RGS = 10KΩ, VD = 5V
Gate trigger voltage VGT 0.440 0.600 V RGS = 100Ω, VD = 5V
On-state voltage VT 0.800 1.200 1.500 V IT = 1A (pulse test)
Holding current IH 0.300 1.000 4.000 mA RGK = 1KΩ, VD = 5V
30 60 - RGK = 1KΩ, VD = 30V (2N3030)
Off-state voltage – critical rate of rise dv/dt 15 30 - V/µs RGK = 1KΩ, VD = 60V (2N3031)
10 25 - RGK = 1KΩ, VD = 100V (2N3032)
Gate trigger-on pulse width tpg(on) - 0.050 0.100 µs IG = 10mA, IT = 1A, VD = 30V
Delay time td - 0.100 - µs IG = 10mA, IT = 1A, VD = 30V
Rise time tr - 0.050 - µs IG = 10mA, IT = 1A, VD = 30V
Circuit commutated turn-off time tg - 0.700 2.000 µs IT = 1A, IR = 1A, RGK = 1K
150°C Tests
High temperature off-state current IDRM - 2 20 µA RGK = 1KΩ, VDRM = rating
High temperature reverse current IRRM - 20 50 µA RGK = 1KΩ, VRRM = rating
High temperature gate trigger voltage VGT 0.100 0.150 0.400 V RGS = 100Ω, VD = 5V
High temperature holding current IH 0.050 0.300 2.000 mA RGK = 1K, VD = 5V
-65°C Tests
Low temperature gate trigger voltage VGT 0.440 0.800 0.950 V RGS = 100Ω, VD = 5V
Low temperature gate trigger current IGT 0 0.400 0.500 mA RGS = 10KΩ, VD = 5V
Low temperature holding current IH 0.500 5.000 8 mA RGK = 1KΩ, VD = 5V