UTC UT137FE TRIAC
TRIACS
DESCRIPTION
Glass passivated , sensitive gate triacs in a full pack plastic
envelope, intended for use in general purpose bidirectional
switching and phase control applications, where high sensitivity is
required in all four quadrants.
1
SYMBOL MT2
TO-220F
MT1 1:MT1 2:MT2 3:GATE
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Repetitive Peak Off-State Voltage
UT137FE-5 500*
VDRM V
UT137FE-6 600*
UT137FE-8 800
RMS On-state Current
IT(RMS) 8 A
Full sine wave; Ths≤73°C
Non-Repetitive Peak. On-State Current
Full sine wave,Tj=125°C prior to surge,with reapplied,VDRM(max)
ITSM A
t=20ms 55
t=16.7ms 60
I2t For Fusing (t=10ms) I2t 15 A2s
Repetitive Rate of Rise of On-state Current after Triggering
ITM=12A;IG=0.2A,dIG/dt=0.2A/µs
T2+ G+ 50
dIT /dt A/µs
T2+ G- 50
T2- G- 50
T2- G+ 10
Peak Gate Voltage VGM 5 V
Peak Gate Current IGM 2 A
Peak Gate Power PGM 5 W
Average Gate Power (Over any 20ms period) PG(AV) 0.5 W
Operating Junction Temperature Tj 125 °C
Storage Temperature Tstg -40~150 °C
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch
to the on-state. The rate of rise of current should not exceed 6A/µs.
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R401-015,B
UTC UT137FE TRIAC
ISOLATION LINITING VALUE & CHARACTERISTIC(Ths=25°C,unless otherwise specified)
PARAMETER SYMBOL MIN TYP MAX UNIT
Repetitive paek voltage form all three terminals to
Visol 1500 V
external heatsink (R.H.≦65%,clean and dustfree)
Capacitance from MT2 to external heatsink (f=1MHz) Cisol 12 pF
THERMAL RESISTANCES
PARAMETER SYMBOL MIN TYP MAX UNIT
Thermal Resistance Junction to heatsink
(full or half cycle) with heatsink compound Rth j-hs 4.5 K/W
without heatsink compound 6.5
Thermal Resistance Junction to Ambient (In free air) Rth j-a 55 K/W
STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate Trigger Current VD=12V, IT=0.1A
T2+ G+ 2.5 10
IGT T2+ G- 4.0 10 mA
T2- G- 5.0 10
T2- G+ 11 25
Latching Current VD=12V, IGT=0.1A
T2+ G+ 3.0 25
IL T2+ G- 14 35 mA
T2- G- 3.0 25
T2- G+ 4.0 35
Holding Current IH VD=12V, IGT=0.1A 2.5 20 mA
On-State Voltage VT IT=10A 1.3 1.65 V
Gate Trigger Voltage VD=12V, IT=0.1A 0.7 1.5 V
VGT
VD=400V, IT=0.1A, Tj=125°C 0.25 0.4 V
Off-state Leakage Current ID VD=VDRM(max) , Tj=125°C 0.1 0.5 mA
DYNAMIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Critical Rate of Rise of off-state VDM=67% VDRM(max), Tj=125°C
Voltage dVD/dt Exponential waveform,Gate 50 V/µs
open circuit
Gate Controlled Turn-on Time ITM=12A,VD=VDRM(max),IG=0.1A,
tgt 2 µs
dIG/dt=5A/µs
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UTC UT137FE TRIAC
TYPICAL CHARACTERISTICS
Figure 1.Maximum on -state Dissipation.Ptot vs RMS On- Figure 4.Maximum Permissible RMS Current IT(RMS)
state Current,IT(RMS),Whereα=Conduction Angle. vs Heatsink Temperature Ths
Tsp(max)/C
12 Ptot/W 71 10
IT(RMS)/A
α α=180
10 α=120 80 73℃
α 8
α=90
8 89
α=60
6
6 98
α=30
4
4 107
2
2 116
0 125 0
0 2 4 6 8 10 -50 0 50 100 150
IT(RMS)/A Ths/℃
Figure 2. Maximum Permissible Non-repetitive Figure 5.Maximum Permissible Repetitive RMS on-state
Peak On-state Current ITSM,vs Pulse Width Current IT(RMS),vs Surge Duration,for Sinusoidal
tp,for Sinusoidal Currents,tp≦20ms Currents,f=50Hz;T hs≦73℃
ITSM/A IT(RMS)/A
1000 25
IT ITSM
time 20
T
Tj initial=125℃max 15
100
10
dIT/dt limit
T2-G+ quadrant 5
10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s Surge Duration /S
Figure 3 .Maximum Permissible Non-Repetitive Figure 6.Normalised Gate Trigger Voltage VGT(Tj)/
peak on-state Current ITSM,vs Number of Cycles, VGT(25℃),vs Junction Temperature Tj
for Sinusoidal Currents,f=50Hz VGT(Tj)
60 1.6 VGT(25℃)
IT ITSM
50 time 1.4
T
40 Tj initial=125℃max 1.2
30 1
20 0.8
0.6
10
0.4
0 -50 0 50 100 150
1 10 100 1000
Tj/℃
Number of Cycles at 50Hz
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UTC UT137FE TRIAC
Figure 7.Normalised Gate Trigger Current Figure 10.Typical and Maximum
IGT(Tj)/IGT(25℃),vs Junction Temperature Tj On-state Characteristic
IGT(Tj) IT/A
IGT(25℃)
25
3 Tj=125℃
T2+G+ Tj=125℃
T2+G- 20 max
2.5 T2-G-
typ
T2-G+
2 15
Vo=1.264V
1.5 Rs=0.0378Ohms
10
1
5
0.5
0 0
-50 0 50 100 150 0 0.5 2.5 3
1 1.5 2
Tj/℃ VT/V
Figure 8.Normalised Latching Current Figure 11.Transient Thermal Impedance
IL(Tj)/IL(25℃),vs Junction Temperature Tj Zth j-hs,vs Pulse Width tp
IL(Tj) Zth j-hs (K/W)
10
IL(25℃)
3 with heatsink compound
without heatsink compound
2.5
unidirectional
1
2 bidirectional
1.5
1 0.1 PD tp
0.5
t
0 0.01
-50 0 50 100 150
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Tj/℃ tp/s
Figure 9.Normalised Holding Current
Figure 12.Typical ,critical rate of rise of off-state
IH(Tj)/IH(25℃),vs Junction Temperature Tj
voltage,dVD/dt versus junction temperature Tj
IH(Tj)
IH(25℃) dVD/dt(V/us)
3 1000
2.5
2 100
1.5
1
10
0.5
0
-50 0 50 100 150 1
Tj/℃ 0 50 100 150
Tj/℃
UTC UNISONIC TECHNOLOGIES CO., LTD. 4
QW-R401-015,B
UTC UT137FE TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD. 5
QW-R401-015,B