Silan

Microelectronics SGT25U120FD1P7_Datasheet

25A, 1200V FIELD STOP IGBT

DESCRIPTION C
2
The SGT25U120FD1P7 field stop IGBT adopts Silan Trench Gate Field
Stop IV+ technology, features low conduction loss and switching loss. 1
G
This device is applicable to UPS, SMPS, and PFC fields.

FEATURES 3
E
 25A, 1200V, VCE(sat)(typ.)=2.2V@IC=25A
 Low conduction loss
 Ultra-fast switching
 High breakdown voltage

1 2
3
TO-247-3L

NOMENCLATURE

SGT 25 U 120 F D 1 P7
IGBT series Package
P7 : TO-247-3L
Current, 70: 70A 1,2,3… : Version No.

N : N Channel Blank: Standard diode

NE : N-channel planar M : Standard Diode, full range
gate with ESD R : Rapid Diode
T : Field Stop 3/4 B : Rapid Diode, full range
U : Field Stop 4+ S : Soft Diode, full range
V : Field Stop 5
D : Packaged with fast recovery diode
W: Field Stop 6
R : RC IGBT
X : Field Stop 7
L : Ultra low switching, recommended frequency ~2KHz
Voltage, 65: 650V Q : Low switching, recommended frequency 2~20KHz
120: 1200V S : Standard frequency, recommended frequency 5~40KHz
F : Fast switching, recommended frequency10~60KHz
UF : Ultra fast switching, recommended frequency 40KHz~

ORDERING INFORMATION

Hazardous
Part No. Package Marking Packing Type
Substance Control
SGT25U120FD1P7 TO-247-3L 25U120FD1 Pb free Tube

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.1

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 Silan
Microelectronics SGT25U120FD1P7_Datasheet

ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TC=25°C)

Characteristics Symbol Ratings Unit

Collector to Emitter Voltage VCE 1200 V
Gate to Emitter Voltage VGE ±20 V
Transient Gate to Emitter Voltage
VGE ±30 V
(tp≤10µs, D<0.010)
TC=25C 50
Collector Current IC A
TC=100C 25
Pulsed Collector Current ICM 75 A
TC=25C 25
Diode Current IF A
TC=100C 12.5
Pulsed Diode Current IFM 50 A
Power Dissipation (TC=25C) PD 278 W
Operating Junction Temperature TJ -55~+150 C
Storage Temperature Range Tstg -55~+150 C

THERMAL CHARACTERISTICS

Characteristics Symbol Ratings Unit

Thermal Resistance, Junction to Case (IGBT) RθJC 0.45 C/W
Thermal Resistance, Junction to Case (FRD) RθJC 1.4 C/W
Thermal Resistance, Junction to Ambient (IGBT) RθJA 50 C/W

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.1

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 Silan
Microelectronics SGT25U120FD1P7_Datasheet

ELECTRICAL CHARACTERISTICS OF IGBT (UNLESS OTHERWISE NOTED, TC=25°C)

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Collector to Emitter
BVCE VGE=0V, IC=1mA 1200 -- -- V
Breakdown Voltage
C-E Leakage Current ICES VCE=1200V, VGE=0V -- -- 10 µA
G-E Leakage Current IGES VGE=20V, VCE=0V -- -- ±120 nA
G-E Threshold Voltage VGE(th) IC=250µA, VCE=VGE 4.7 -- 7.8 V
Collector to Emitter IC=25A, VGE=15V, TC=25C -- 2.2 2.7 V
VCE(sat)
Saturation Voltage IC=25A, VGE=15V, TC=125C -- 2.4 -- V
Input Capacitance Cies VCE=30V -- 2772 --
Output Capacitance Coes VGE=0V -- 85 -- pF
Reverse Transfer Capacitance Cres f=1MHz -- 19 --
Turn-On Delay Time Td(on) -- 24 --
Rise Time Tr VCE=600V -- 30 --
ns
Turn-Off Delay Time Td(off) IC=10A -- 64 --
Fall Time Tf Rg=10Ω -- 154 --
Turn-On Switching Loss Eon VGE=15V -- 0.86 --
Turn-Off Switching Loss Eoff inductive load -- 0.19 -- mJ
Total Switching Loss Est -- 1.05 --
Turn-On Delay Time Td(on) -- 30 --
Rise Time Tr VCE=600V -- 77 --
ns
Turn-Off Delay Time Td(off) IC=25A -- 68 --
Fall Time Tf Rg=10Ω -- 108 --
Turn-On Switching Loss Eon VGE=15V -- 2.3 --
Turn-Off Switching Loss Eoff inductive load -- 0.42 -- mJ
Total Switching Loss Est -- 2.72 --
Total Gate Charge Qg -- 91 --
Gate to Emitter Charge Qge VCE=600V, IC=25A, VGE=15V -- 31 -- nC
Gate to Collector Charge Qgc -- 30 --

ELECTRICAL CHARACTERISTICS OF FRD (UNLESS OTHERWISE NOTED, TC=25°C)

Characteristics Symbol Test conditions Min. Typ. Max. Unit

IF=12.5A, TC=25C -- 2.8 3.1
Diode Forward Voltage VFM V
IF=12.5A, TC=125C -- 2.4 --
Diode Reverse Recovery Time Trr IEC=10A, dIEC/dt=200A/μs, -- 67 -- ns
Diode Reverse Recovery Charge Qrr TC=25C -- 331 -- nC

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.1

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 Silan
Microelectronics SGT25U120FD1P7_Datasheet

TYPICAL CHARACTERISTICS

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

200 200
VGE=9V VGE=9V
VGE=11V VGE=11V
VGE=13V VGE=13V
Collector Current – IC(A)

Collector Current – IC(A)

VGE=15V VGE=15V
150 VGE=17V 150 VGE=17V

100 100

Emitter in
50 Emitter in 50 common
common TC =125°C
TC =25°C

0 0
0 2 4 6 8 10 0 2 4 6 8 10
Collector-emitter Voltage – VCE(V) Collector-emitter Voltage – VCE(V)

Figure 3. Typical Saturation

Figure 4. Transmission Characteristics
Voltage Characteristics
100 50
TC=25°C TC=25°C
TC=125°C TC=125°C
Collector Current – IC(A)

Collector Current – IC(A)

80 40

60 30

40 20

20
Emitter in
10
Emitter in
common common
VGE=15V VCE=10V
0 0
0 1 2 3 4 5 6 0 5 10 15
Collector-emitter Voltage – VCE(V) Gate-emitter Voltage– VGE(V)

Figure 5. Saturation Voltage Drop vs. VGE Figure 6. Saturation Voltage Drop vs. VGE
15 15
IC=10A IC=10A
Collector-emitter Voltage - VCE(V)
Collector-emitter Voltage - VCE(V)

IC=25A IC=25A
IC=50A IC=50A

10 10

5 5

Emitter in Emitter in
common common
TC=25°C TC=125°C
0 0
4 8 12 16 20 4 8 12 16 20
Gate-emitter Voltage– VGE(V) Gate-emitter Voltage– VGE(V)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.1

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 Silan
Microelectronics SGT25U120FD1P7_Datasheet
TYPICAL CHARACTERISTICS (CONTINUED)

Figure 7. Saturation Voltage Drop vs. Temperature Figure 8. Capacitance Characteristics

4.0 100000
IC=10A
Collector-emitter Voltage - VCE(V)

IC=25A
3.5
IC=50A 10000
Cies

Capacitance (pF)
3.0
1000

2.5 Coes
100
2.0
Emitter in
10 common
Cres
1.5 Emitter in
VGE=0V
common
f=1MHz
VGE=15V
TC=25°C
1.0 1
0 50 100 150 1 10 100
Case Temperature – TC(°C) Collector-emitter Voltage – VCE(V)
Figure 10. Turn-on Characteristics vs.
Figure 9. Gate Charge Characteristics
Gate Resistance
16 1000
VCE=600V
VCE=400V
Gate-emitter Voltage - VGE(V)

VCE=200V
Switching Time (ns)

12
tr
100

td(on)
8

10
4
Emitter in common
Note: IC=25A VCC=600V, VGE=15V
IC=25A, TC=25°C
0 1
0 20 40 60 80 100 0 20 40 60 80
Gate Charge – QG(nC) Gate Resistance - RG(Ω)
Figure 11. Turn-off Characteristics
Figure 12. Switching Loss vs. Gate Resistance
1000 vs. Gate Resistance 10000

Eon
td(off)
Switching Time (ns)

Switching Loss (uJ)

100 tf 1000
Eoff

Emitter in common Emitter in common

VCC=600V, VGE=15V VCC=600V, VGE=15V
IC=25A, TC=25°C IC=25A, TC=25°C
10 100
0 20 40 60 80 0 20 40 60 80
Gate Resistance - RG(Ω) Gate Resistance - RG(Ω)

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 Silan
Microelectronics SGT25U120FD1P7_Datasheet
TYPICAL CHARACTERISTICS (CONTINUED)

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics

Collector Current vs. Collector Current
1000 1000

tr

Switching Time (ns)

Switching Time (ns)

100
tf
100
td(on)

td(off)
10

Emitter in common Emitter in common

VCC=600V, VGE=15V VCC=600V, VGE=15V
RG=10Ω, TC=25°C RG=10Ω, TC=25°C
1 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Collector Current - IC(A) Collector Current - IC(A)

Figure 15. Switching Loss vs. Collector Current Figure 16. Forward Characteristics
100000 100
Forward Current - IFM(A)

10000
Switching Loss (μJ)

TC=125°C
Eon

TC=25°C
1000 10

Eoff

100
Emitter in common
VCC=600V, VGE=15V
RG=10Ω, TC=25°C
10 1
0 10 20 30 40 50 60 0 1 2 3 4 5 6
Collector Current - IC(A) Forward Voltage - VFM(V)
Figure 17. Reverse Recovery Figure 18. Reverse Recovery
Time vs. Forward Current Charge vs. Forward Current
140 600
Reverse Recovery Charge - Qrr(nC)
Reverse Recovery Time - Trr(ns)

120
500

100
di/dt=200A/µs
di/dt=100A/µs
400

80

di/dt=200A/µs 300
60
di/dt=100A/µs
200
40

20 100
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Forward Current -IF(A) Forward Current -IF(A)

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 Silan
Microelectronics SGT25U120FD1P7_Datasheet
TYPICAL CHARACTERISTICS (CONTINUED)

Figure 19. Peak Reverse Recovery

Figure 20. Tb Slope vs. Forward Current
Current vs. Forward Current
Peak Reverse Recovery Current - Irm(A)

15 250

Tb Slope – dirr/dt(A/µs)
12 dirr/dt=200A/µs
Irm=200A/µs 200

150

6
Irm=100A/µs
dirr/dt=100A/µs
100
3

0 50
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Forward Current -IF(A) Forward Current -IF(A)
Figure 22. Transient Thermal Impedance
Figure 21. Max. Safe Operating Area vs. On-pulse Duration (IGBT)
103 100 70%

50%
Normalized Thermal Impedance

30%

102
Collector Current - IC(A)

10µs
10-1
10%

1 100µs
10 5%

1ms
10ms
DC 2%
100
-2
10 1%

0.5%

10-1
0.2%

Single Pulse

10-2 0 10-3
10 101 102 103 104 10-6 10-5 10-4 10-3 10-2 10-1 100
Collector-Emitter Voltage - VCE(V) On-pulse Duration (Sec)
Figure 23. Transient Thermal Impedance
vs. On-pulse Duration (FRD)
100 70%

50%
Normalized Thermal Impedance

30%

10-1
10%

5%

2%

1%
10-2
0.5%

0.2%

Single Pulse

10-3
10-6 10-5 10-4 10-3 10-2 10-1 100
On-pulse Duration (Sec)

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 Silan
Microelectronics SGT25U120FD1P7_Datasheet
PACKAGE OUTLINE

TO-247-3L UNIT: mm

E A MILLIMETER
A2 SYMBOL
Q

MIN NOM MAX

φP
A 4.80 5.00 5.20
A1
E2

2.21 2.41 2.59

A2 1.85 2.00 2.15
D

b 1.11 _ 1.36
_
b2 1.91 2.25
_
b4 2.91 3.25
_
c 0.51 0.75
L1

D 20.80 21.00 21.30

E 15.50 15.80 16.10

E2 4.40 5.00 5.20
L

e 5.44 BSC

L 19.72 19.92 20.22

_ _
L1 4.30
b2 C
b A1 Q 5.60 5.80 6.00
b4
e P 3.40 — 3.80

Important notice :
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 Silan
Microelectronics SGT25U120FD1P7_Datasheet
Part No.: SGT25U120FD1P7 Document Type: Datasheet
Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.1
Revision History:
1. Add VGE and pulsed diode current
Rev.: 1.0
Revision History:
1. First release

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