BAT54H
Taiwan Semiconductor
200mA, 30V Schottky Barrier Diode
FEATURES KEY PARAMETERS
● AEC-Q101 qualified PARAMETER VALUE UNIT
● Fast switching speed
IF 200 mA
● Low forward voltage
● Surface mound device type VRRM 30 V
● Moisture sensitivity level: level 1, per J-STD-020 IFSM 600 mA
● RoHS Compliant
TJ MAX 125 °C
● Halogen-free
VF at IF=100mA 800 mV
APPLICATIONS Configuration Single die
● Ultra high-speed switching
● Line termination
● Voltage clamping
● Reverse polarity protection
MECHANICAL DATA
● Case: SOT-23
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Weight: 8.00mg (approximately)
PACKAGE: SOT-23 PIN CONFIGURATION CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Power dissipation(1) PD 200 mW
Repetitive peak reverse voltage VRRM 30 V
Forward current IF 200 mA
Repetitive peak forward current IFRM 300 mA
Non-repetitive peak forward surge current t < 1.0s IFSM 600 mA
Junction temperature TJ -55 to +125 °C
Storage temperature TSTG -55 to +150 °C
Note:
1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint
1 Version: A2501
BAT54H
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER SYMBOL TYP UNIT
Junction-to-ambient thermal resistance(1) RӨJA 500 °C/W
Thermal Performance Note:
1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
IF = 0.1mA - - 240
IF = 1mA - - 320
Forward voltage(1) IF = 10mA VF - - 400 mV
IF = 30mA - - 500
IF = 100mA - - 800
Reverse breakdown voltage IR = 100μA VBR 30 - - V
Reverse current(2) VR = 25V IR - - 2 μA
Junction capacitance f = 1MHz, VR = 1V CJ - - 10 pF
IF = IR = 10mA,
Reverse recovery time trr - - 5 ns
IRR = 1mA, RL = 100Ω
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
ORDERING CODE PACKAGE PACKING
BAT54H RFG SOT-23 3,000 / 7” Tape & Reel
2 Version: A2501
BAT54H
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Dissipation Curve Fig.2 Typical Junction Capacitance
250 20
18
200 16
POWER DISSIPATION (mW)
CAPACITANCE (pF)
14
150 12
10
100 8
6
50 4
2
0 0
0 25 50 75 100 125 0 5 10 15 20 25 30
AMBIENT TEMPERATURE (°C) REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics
INSTANTANEOUS FORWARD CURRENT (mA)
1000 1000
INSTANTANEOUS REVERSE CURRENT (μA)
TJ=125°C TJ=125°C
100
100
TJ=85°C
10 TJ=85°C
TJ=-55°C
(A)
10
1 TJ=75°C
1 TJ=25°C
0.1
TJ=25°C
0.01 0.1
0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8
REVERSE VOLTAGE (V) FORWARD VOLTAGE (V)
3 Version: A2501
BAT54H
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
SOT-23
KL1FYW
KL1 = Device marking
F = Factory code
Y = Year code
W = Bi-Week code (A~Z)
4 Version: A2501
BAT54H
Taiwan Semiconductor
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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for application assistance or the design of Purchasers’ products.
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and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC
for any damages resulting from such improper use or sale.
5 Version: A2501