HI-SINCERITY Spec. No.
: HE6834
Issued Date : 1998.02.01
MICROELECTRONICS CORP. Revised Date : 2004.08.26
Page No. : 1/4
HBAV99
HIGH-SPEED SWITCHING DIODE
Description SOT-23
The HBAV99 consists of two diodes in a plastic surface mount package. The
diodes are connected in series and the unit is designed for high-speed switching Diagram:
application in hybrid thick and thin-film circuits.
Features
• Small SMD Package (SOT-23)
• Ultra-high Speed
• Low Forward Voltage
• Fast Reverse Recovery Time
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -65 ~ +150 °C
Junction Temperature .................................................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 250 mW
• Maximum Voltages and Currents (TA=25°C)
Reverse Voltage.................................................................................................................................................. 70 V
Repetitive Reverse Voltage ................................................................................................................................ 70 V
Forward Current............................................................................................................................................. 150 mA
Repetitive Forward Current............................................................................................................................ 500 mA
Forward Surge Current (1ms)...................................................................................................................... 1000 mA
Electrical Characteristics (TA=25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Breakdown Voltage V(BR) IR=100uA 70 - V
VF(1) IF=1mA - 715 mV
VF(2) IF=10mA - 855 mV
Forward Voltage
VF(3) IF=50mA - 1000 mV
VF(4) IF=150mA - 1250 mV
Reverse Current IR VR=70 - 2.5 uA
Total Capacitance CT VR=0, f=1MHz - 1.5 pF
IF=IR=10mA, RL=100Ω, measured at
Reverse Recovery Time Trr - 6 nS
IR=1mA
HBAV99 HSMC Product Specification
HI-SINCERITY Spec. No. : HE6834
Issued Date : 1998.02.01
MICROELECTRONICS CORP. Revised Date : 2004.08.26
Page No. : 2/4
Characteristics Curve
Forward Biased Voltage & Forward Current Capacitance & Reverse-Biased Voltage
450 1
Capacitance-Cd (pF)
300
Current-IF (mA)
150
0 0.1
0 500 1000 1500 2000 0.1 1 10 100
Forward Biased Voltage-VF (mV) Reverse Biased Voltage-VR (V)
Power Derating
300
250
PD(mW), Power Dissipation
200
150
100
50
0
0 20 40 60 80 100 120 140 160
o
Ta( C ), Ambient Temperature
HBAV99 HSMC Product Specification
HI-SINCERITY Spec. No. : HE6834
Issued Date : 1998.02.01
MICROELECTRONICS CORP. Revised Date : 2004.08.26
Page No. : 3/4
SOT-23 Dimension
DIM Min. Max.
Marking: A 2.80 3.04
A B 1.20 1.60
L C 0.89 1.30
A 7 D 0.30 0.50
Pb Free Mark G 1.70 2.30
3 Pb-Free: " " (Note)
Normal: None H 0.013 0.10
B S
J 0.085 0.177
1 2 Note: Pb-free product can distinguish by the green K 0.32 0.67
label or the extra description on the right
side of the label.
L 0.85 1.15
V G S 2.10 2.75
Pin Style: 1.Anode 2.Cathode V 0.25 0.65
3.Common Connection
*: Typical, Unit: mm
Material:
C • Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
D H K J flammability solid burning class: UL94V-0
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBAV99 HSMC Product Specification
HI-SINCERITY Spec. No. : HE6834
Issued Date : 1998.02.01
MICROELECTRONICS CORP. Revised Date : 2004.08.26
Page No. : 4/4
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
TP Critical Zone
TL to TP
Ramp-up
TL
Tsmax tL
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
o
Average ramp-up rate (TL to TP) <3 C/sec <3oC/sec
Preheat
- Temperature Min (Tsmin) 100oC 150oC
- Temperature Max (Tsmax) 150oC 200oC
- Time (min to max) (ts) 60~120 sec 60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
Time maintained above:
- Temperature (TL) 183oC 217oC
- Time (tL) 60~150 sec 60~150 sec
o o
Peak Temperature (TP) 240 C +0/-5 C 260oC +0/-5oC
Time within 5oC of actual Peak
10~30 sec 20~40 sec
Temperature (tP)
Ramp-down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245 C ±5 Co o
5sec ±1sec
Pb-Free devices. o
260 C +0/-5 C o
5sec ±1sec
HBAV99 HSMC Product Specification
