CMOS DIGITAL VLSI DESIGN
Concept of Memory and its Designing-I
                    SUDEB DASGUPTA
   DEPARMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
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                               Outline
•    Introduction-Memory
•    Memory Classification
•    Memory Architectures and Building Blocks
•    The Memory Core
a)   Read-only Memories
b)   Nonvolatile Read-Write Memories
c)   Read-Write Memories (RAM)
•    Recapitulation
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                     Introduction: Memory
• More than half of the transistors in today’s high performance
  microprocessors are devoted to cache memories, and this ratio is
  expected to further increase.
• Memory cells are combined into large arrays, which minimizes the
  overhead caused by peripheral circuitry and increases the storage
  density.
• Reliability and power dissipation are two major concerns of the
  semiconductor memory designer.
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                        Memory Classification
 Size
• The circuit designer tends to define the size of the memory in terms
  of bits that are equivalent to the number of individual cells needed to
  store the data.
• The chip designer express the memory size in bytes (group of 8 or 9
  bits) or its multiple-kilobytes, megabytes, gigabytes etc.
• The system designer quotes the storage requirements in terms of
  words, which represent a basic computational entity.
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 Timing Parameters                                            Cont…
• The time require to retrieve from the memory is called Read-Access
  Time, which is the delay between the read request and the moment
  the data is available at the output.
• The time elapsed between a write request and the final writing of the
  input data into the memory is called Write-Access Time.
              Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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 Functions                                                     Cont…
• Based on memory functionality it is classified as Read-Only memory
  (ROM) and Read-Write Memory (RWM).
• RWM uses active circuitry to store the data, so it belong to the class
  of volatile memory, in which data is lost when the supply voltage is
  turned off.
• ROM belongs to the category of non-volatile memories.
  Disconnection of the supply voltage does not result in the loss of the
  stored data.
• The EPROM and E2PROM provides the facilities of both read-write
  functionality but comes under the category of non-volatile memories.
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 Access pattern                                             Cont…
• Most of the memories are random-access memories in which
  memory location can be read and written in a random order.
• Some memories are restricts the order of access, which results in
  either fast access time, smaller area or a memory with a special
  functionality. Examples of such memory are FIFO, LIFO etc.
             Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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           Memory Architecture and Building Blocks
• To implement an N-word memory where each word is M bits wide,
  then the most intuitive approach is to stack the subsequent memory
  words in a linear fashion.
             Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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 Array Structured Memory Organization
            Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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 Hierarchical Memory Architecture
            Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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                                        The Memory Core
 Read only Memories
           Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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 A 4×4 OR ROM Array
           Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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 Non-volatile Read-Write Memories-
   Floating-Gate Transistor                                           EPROM                                            Flash-EPROM
                Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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 Read Write Memories (RAM)
• Storage in RAM memories is based on either positive feedback or
  capacitive charge.
a) Static RAM
            Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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 SRAM Read & Write Operation
      Read Operation                                                                                   Write Operation
             Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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b) Dynamic RAM
           Source: J. M. Rabaey, A. Chandrakasan and B. Nikolic, “Digital Integrated Circuit,” PHI Learning Pvt. Ltd., 2011.
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                           Recapitulation
• The type of memory unit that us preferable for a given application is
  a function of required memory size, the time it takes to access the
  stored data, the access pattern, the application and the system
  requirements.
• RWM belong to the class of volatile memory while ROM belongs to
  the category of non-volatile memories.
• EPROM and E2PROM are the memories which offer both read and
  write functionality even that are of non-volatile in nature.
• RAM can be classified as Static RAM and Dynamic RAM based on the
  storage concept.
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Thank You
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