PD-94605E

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

Product Summary
Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103 -30A IRHMS593260 300K Rads (Si) 0.103 -30A

IRHMS597260 200V, P-CHANNEL

5

TECHNOLOGY

Low-Ohmic TO-254AA
International Rectifiers R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

Features:
n n n n n n n n n n

Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight

Absolute Maximum Ratings

Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC =100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -30 -19 -120 208 1.67 20 332 -30 20.8 -4.1 -55 to 150

Pre-Irradiation
Units A
W
W/C

V mJ A mJ V/ns C g

300 (0.063in./1.6mm from case for 10s) 9.3 (Typical)

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1
01/16/07

IRHMS597260

Pre-Irradiation

Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)

Parameter
BVDSS Drain-to-Source Breakdown Voltage

Min
-200

Typ Max Units

-0.25 4.0 0.103 -4.0 -10 -25 -100 100 180 75 50 50 100 190 175 V V/C V S A

Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -19A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -19A VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -30A VDS = -100V VDD = -100V, ID = -30A VGS =-12V, RG = 1.20

BVDSS / T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 23 IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance

nA nC

ns

nH Measured from Drain lead (6mm /.25in.from

package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad

Ciss Coss Crss

Input Capacitance Output Capacitance Reverse Transfer Capacitance

7170 920 86

pF

VGS = 0V, VDS = -25V f = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min Typ Max Units

-30 -120 -5.0 300 6.0

Test Conditions

A
V ns C Tj = 25C, IS = -30A, VGS = 0V Tj = 25C, IF = -30A, di/dt -100A/s VDD -50V

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient

Min Typ Max Units

0.21 0.6 48 C/W

Test Conditions

Typical socket mount

Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page

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Radiation Characteristics Pre-Irradiation

IRHMS597260

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation

Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Diode Forward Voltage 100K Rads(Si)1 Min Max -200 -2.0 -4.0 -100 100 -10 0.103 -5.0 300KRads(Si)2 Min Max -200 -2.0 -5.0 -100 100 -10 0.103 -5.0 Units V nA A V

Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS = -160V, VGS =0V VGS = -12V, ID =-19A VGS = 0V, IS = -30A

1. Part number IRHMS597260 2. Part number IRHMS593260

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

Ion Br I Au LET (MeV/(mg/cm2)) 37.3 59.9 82.3 Energy (MeV) 285 345 357 VDS (V) Range (m) @VGS= 0V @VGS= 5V @VGS=10V @VGS= 15V 36.8 - 200 - 200 - 200 - 200 32.7 - 200 - 200 - 200 - 50 28.5 - 200 - 200 - 200 - 35 @VGS= 20V -75

-250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Br I Au

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

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IRHMS597260

Pre-Irradiation

1000
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V

1000

-I D, Drain-to-Source Current (A)

100

-5.0V

-I D, Drain-to-Source Current (A)

100

VGS -15V -12V -10V -9.0V -8.0V -7.0V - 6.0V BOTTOM -5.0V TOP

-5.0V

10

10

20s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)

20s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.5

RDS(on) , Drain-to-Source On Resistance (Normalized)

-32A ID = -30A

-I D, Drain-to-Source Current ( )

2.0

T J = 25C 100 T J = 150C

1.5

1.0

VDS = -50V 20s PULSE 15 WIDTH 10 5 5.5 6 6.5 7 7.5 8 -V GS, Gate-to-Source Voltage (V)

0.5

0.0 -60 -40 -20

VGS = -12V
0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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Pre-Irradiation

IRHMS597260

12000

VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED

16 ID= -30A -32A

-V GS, Gate-to-Source Voltage (V)

10000

Crss = C gd Coss = C ds + Cgd

VDS= -160V VDS= -100V VDS= -40V

C, Capacitance (pF)

12

8000

Ciss

6000

4000

Coss

2000

Crss
0 1 10 100

0 0 20 40 60 80 100 120 QG Total Gate Charge (nC)

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000

1000

-ISD , Reverse Drain Current ( )

100 T J = 150C 10 TJ = 25C 1

-I D, Drain-to-Source Current (A)

OPERATION IN THIS AREA LIMITED BY R DS(on)

100

100s 10 1ms Tc = 25C Tj = 150C Single Pulse 1 10 100 10ms 1000

0.1 0.5 1.5 2.5 3.5 4.5

VGS = 0V 5.5 6.5

-VSD , Source-to-Drain Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRHMS597260

Pre-Irradiation

30
V GS

V DS

RD

-I D, Drain Current (A)

RG

D.U.T.
+

20
V GS
Pulse Width 1 s Duty Factor 0.1 %

V DD

10

Fig 10a. Switching Time Test Circuit

td(on) tr t d(off) tf

VGS

0 25 50 75 100 125 150 T C , Case Temperature (C)

10%

90%

Fig 9. Maximum Drain Current Vs. Case Temperature

VDS

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)

PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC

0.01

0.001 0.00001

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Pre-Irradiation

IRHMS597260

EAS , Single Pulse Avalanche Energy (mJ)

VDS

800

RG

D.U.T
IAS

+
DRIVER

V VDD DD
A

600

ID -13.4A -19A BOTTOM -30A TOP

VGS -20V

tp

0.01

400

15V

200

Fig 12a. Unclamped Inductive Test Circuit

I AS

25

50

75

100

125

150

Starting TJ, Junction Temperature (C)

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

tp V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

QG

50K

-12 V

-12V 12V

.2F

.3F

QGS

QGD
VGS
-3mA

D.U.T.

+VDS

VG

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRHMS597260

Pre-Irradiation
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.

Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -50V, starting TJ = 25C, L=0.73mH Peak IL = -30A, VGS = -12V ISD -30A, di/dt -220A/s, VDD -200V, TJ 150C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions Low-Omic TO-254AA

3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]

17.40 [.685] 16.89 [.665]

1 2 3

20.32 [.800] 20.07 [.790]

13.84 [.545] 13.59 [.535]

14.48 [.570] 12.95 [.510]

0.84 [.033] MAX.

3X

3.81 [.150]
2X

1.14 [.045] 0.89 [.035] 0.36 [.014] B A

3.81 [.150]

NOT ES:

1. 2. 3. 4.

DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.

PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE

CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2008

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