VN770K

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

TYPE VN770K

RDS(on) 220m (*)

IOUT 9A (**)

VCC 36V

(*) Total resistance of one side in bridge configuration (**) Typical current limitation value

SUITED AS LOW VOLTAGE BRIDGE LINEAR CURRENT LIMITATION I VERY LOW STAND-BY POWER DISSIPATION I SHORT CIRCUIT PROTECTED I STATUS FLAG DIAGNOSTIC (OPEN DRAIN) I INTEGRATED CLAMPING CIRCUITS I UNDERVOLTAGE PROTECTION
I I I

SO-28

ESD PROTECTION to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature. The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPower technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin.

DESCRIPTION The VN770K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPower M0-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual high side switches have built-in thermal shutdown PIN FUNCTION
No 1, 3, 25, 28 2 4, 11 5, 10, 19, 24 6 7 8 9 12, 14, 15, 18 13 16, 17 20, 21 22, 23 26, 27 NAME DRAIN 3 INPUT 3 N.C. VCC GND INPUT 1 DIAGNOSTIC INPUT 2 DRAIN 4 INPUT 4 SOURCE 4 SOURCE 2 SOURCE 1 SOURCE 3

FUNCTION Drain of Switch 3 (low-side switch) Input of Switch 3 (low-side switch) Not Connected Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage Ground of Switches 1 and 2 (high-side switches) Input of Switch 1 (high-side switches) Diagnostic of Switches 1 and 2 (high-side switches) Input of Switch 2 (high-side switch) Drain of switch 4 (low-side switch) Input of Switch 4 (low-side switch) Source of Switch 4 (low-side switch) Source of Switch 2 (high-side switch) Source of Switch 1 (high-side switch) Source of Switch 3 (low-side switch)

December 2002

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VN770K
BLOCK DIAGRAM
Vcc

Vcc CLAMP

OVERVOLTAGE UNDERVOLTAGE

GND INPUT1 DIAG

DRIVER 1

CLAMP 1

SOURCE1
CLAMP 2 CURRENT LIMITER 1 OVERTEMP. 1 LOGIC OPENLOAD ON 1 DRIVER 2

SOURCE2
CURRENT LIMITER 2 OPENLOAD OFF 1 OPENLOAD ON 2

INPUT2

OPENLOAD OFF 2 OVERTEMP. 2

Overvoltage Clamp

DRAIN3

INPUT3

Gate Control
SOURCE3

Over Temperature

Linear Current Limiter

Overvoltage Clamp

DRAIN4

INPUT4

Gate Control
SOURCE4

Over Temperature

Linear Current Limiter

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VN770K
CONNECTION DIAGRAM

THERMAL DATA
Symbol Rthj-case Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case (High-side switch) Thermal Resistance Junction-case (Low-side switch) Thermal Resistance Junction-ambient MAX MAX MAX Value 20 20 60 Unit C/W C/W C/W

ABSOLUTE MAXIMUM RATING DUAL HIGH SIDE SWITCH

Symbol VCC - VCC - IGND IOUT - IOUT IIN Istat Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT - STATUS - OUTPUT Ptot Tj Tc Tstg - VCC Power Dissipation (TC=25C) Junction Operating Temperature Case Operating Temperature Storage Temperature Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 Unit V V mA A A mA mA

4000 4000 5000 5000 6 Internally Limited - 40 to 150 - 55 to 150

V V V V W C C C 3/20

VESD

VN770K
ABSOLUTE MAXIMUM RATING (continued) LOW SIDE SWITCH
Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5K, C=100pF) Electrostatic Discharge on output pin only (R=330, C=150pF) Power Dissipation (TC=25C) Operating Junction Temperature Case Operating Temperature Storage Temperature Value Internally Clamped Internally Clamped +/-20 150 Internally Limited -10.5 4000 16500 6 Internally limited Internally limited -55 to 150 Unit V V mA A A V V W C C C

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8V < VCC < 36V; -40C < Tj < 150C, unless otherwise specified) POWER OUTPUTS (Per each channel)
Symbol VCC (**) VUSD (**) VOV (**) RON Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down On State Resistance Test Conditions Min 5.5 3 36 Typ 13 4 Max 36 5.5 160 12 12 5 0 -75 320 40 25 7 50 0 5 3 Unit V V V m m A A mA A A A A

IOUT=1A; Tj=25C IOUT=1A; VCC>8V Off State; VCC=13V; VIN=VOUT=0V Off State; VCC=13V; VIN=VOUT=0V; Tj=25C On State; VCC=13V; VIN=5V; IOUT=0A VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; Vcc=13V; Tj =125C VIN=VOUT=0V; Vcc=13V; Tj =25C

IS (**)

Supply Current

IL(off1) IL(off2) IL(off3) IL(off4)

(**) Per device

Off State Off State Off State Off State

Output Current Output Current Output Current Output Current

SWITCHING (VCC=13V)
Symbol td(on) td(off) dVOUT/ dt(on) dVOUT/ dt(off) Parameter Turn-on Delay Time Turn-off Delay Time Turn-on Voltage Slope Test Conditions RL=13 from VIN rising edge to VOUT=1.3V RL=13 from VIN falling edge to VOUT=11.7V RL=13 from VOUT=1.3V to VOUT=10.4V RL=13 from VOUT=11.7V to VOUT=1.3V Min Typ 30 30 See relative diagram See relative diagram Max Unit s s V/s

Turn-off Voltage Slope

V/s

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VN770K
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) LOGIC INPUT
Symbol VIL IIL VIH IIH Vhyst VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN = 1.25V VIN = 3.25V IIN = 1mA IIN = -1mA 0.5 6 6.8 -0.7 Min 1 3.25 10 8 Typ Max 1.25 Unit V A V A V V V

STATUS PIN
Symbol VSTAT ILSTAT CSTAT VSCL Parameter Test Conditions Status Low Output Voltage ISTAT= 1.6 mA Status Leakage Current Normal Operation; VSTAT= 5V Status Pin Input Normal Operation; VSTAT= 5V Capacitance ISTAT= 1mA Status Clamp Voltage ISTAT= - 1mA Min Typ Max 0.5 10 100 6 6.8 -0.7 8 Unit V A pF V V

PROTECTIONS
Symbol TTSD TR Thyst tsdl Ilim Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Conditions Current limitation Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 15 20 7 8 10 13 13 13 VCC-41 VCC-48 VCC-55 Max 200 Unit C C C s A A A V

Tj>TTSD Tj=125 C
5.5V<VCC<36V IOUT=1A; L=6mH

Vdemag

OPENLOAD DETECTION
Symbol IOL tDOL(on) VOL tDOL(off) Parameter Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State Voltage Detection Threshold Openload Detection Delay at Turn Off Test Conditions VIN=5V IOUT=0A VIN=0V 1.5 2.5 Min 20 Typ 40 Max 80 200 3.5 1000 Unit mA s V s

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VN770K
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (-40C < Tj < 150C, unless otherwise specified) OFF
Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=3.5A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V A V A

ON
Symbol RDS(on) Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=3.5A; Tj=25C VIN=5V; ID=3.5A Min Typ Max 60 120 Unit m

(Tj=25C, unless otherwise specified) DYNAMIC

Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=3.5A VDS=13V; f=1MHz; VIN=0V Min Typ 9 220 Max Unit S pF

SWITCHING
Symbol td(on) tr td(off) tf td(on) tr td(off) tf (dI/dt)on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDD=15V; ID=3.5A Vgen=5V; Rgen=RIN MIN=150 Min Typ 100 470 500 350 0.75 4.6 5.4 3.6 6.5 18 Max 300 1500 1500 1000 2.3 14.0 16.0 11.0 Unit ns ns ns ns s s s s A/s nC

VDD=15V; ID=3.5A Vgen=5V; Rgen=2.2K VDD=15V; ID=3.5A Vgen=5V; Rgen=RIN MIN=150 VDD=12V; ID=3.5A; VIN=5V Igen=2.13mA

SOURCE DRAIN DIODE

Symbol VSD (*) trr Qrr IRRM 6/20 Parameter Test Conditions Forward On Voltage ISD=3.5A; VIN=0V Reverse Recovery Time ISD=3.5A; dI/dt=20A/s Reverse Recovery Charge VDD=30V; L=200H Reverse Recovery Current Min Typ 0.8 220 0.28 2.5 Max Unit V ns C A

VN770K
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued) PROTECTIONS (-40C < Tj < 150C, unless otherwise specified)
Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=5V; VDS=13V VIN=5V; VDS=13V; Tj=125C VIN=5V; VDS=13V Min 6 6.5 4.0 150 135 VIN= 5V; VDS=13V; Tj=Tjsh starting Tj=25C; VDD=24V VIN=5V; Rgen=RIN MIN=150; L=24mH 15 200 175 Typ 9 Max 12 12 Unit A A s C C mA mJ

(*) Pulsed: Pulse duration = 300s, duty cycle 1.5%

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VN770K
DUAL HIGH-SIDE SWITCH SWITCHING TIME WAVEFORMS
VOUTn 90% 80%

dVOUT/dt(on)

dVOUT/dt(off)

10% t VINn

td(on)

td(off)

TRUTH TABLE
CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H H L H L H L H L H L H OUTPUT L H L X X L L L L L L H H L H STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L OVER TEMP STATUS TIMING Tj > TTSD VINn

OPEN LOAD STATUS TIMING (with external pull-up) IOUT < IOL VOUT> VOL VINn

VSTAT n

VSTAT n tSDL tDOL(off) tDOL(on) tSDL

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VN770K
TYPICAL APPLICATION DIAGRAM

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VN770K
Figure 1: Waveforms

NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VCC INPUTn OUTPUT VOLTAGEn STATUSn undefined
VUSD VUSDhyst

OVERVOLTAGE
VCC<VOV VCC>V OV

VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn OUTPUT VOLTAGEn STATUSn
VOUT>VOL

VOL

OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj INPUTn OUTPUT CURRENTn STATUSn
TTSD TR

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VN770K
ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH Off State Output Current
IL(off1) (A)
1.6 1.44 1.28 1.12 0.96 0.8 0.64 0.48 0.32 0.16 0 -50 -25 0 25 50 75 100 125 150 175

High Level Input Current

Iih (A)
5 4.5

Off state Vcc=36V Vin=Vout=0V

Vin=3.25V
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Input Clamp Voltage

Vicl (V)
8 7.75

Status Leakage Current

Ilstat (A)
0.03 0.0275

Iin=1mA
7.5 7.25 7 6.75

0.025 0.0225 0.02 0.0175 0.015 0.0125 0.01

Vstat=5V

6.5 6.25

0.0075 0.005 0.0025

6 -50 -25 0 25 50 75 100 125 150 175

0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Status Low Output Voltage

Vstat (V)
1 0.9

Status Clamp Voltage

Vscl (V)
8 7.75

Istat=1.6mA
0.8 0.7 0.6 0.5 0.4 0.3

Istat=1mA
7.5 7.25 7 6.75 6.5

0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 175 6.25 6 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

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VN770K
ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) On State Resistance Vs Tcase
Ron (mOhm)
400 350 300 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 175

On State Resistance Vs VCC

Ron (mOhm)
400 350

Iout=1A Vcc=8V; 13V & 36V

Iout=1A
300 250 200 150 100 50 0 5 10 15 20 25 30 35 40

Tc=150C

Tc=25C Tc= - 40C

Tc (C)

Vcc(V)

Openload On State Detection Threshold

Iol (mA)
60 55 50 45 40 35 30 25 20 15 10 -50 -25 0 25 50 75 100 125 150 175

Input High Level

Vih (V)
3.5 3.375

Vcc=13V Vin=5V

3.25 3.125 3 2.875 2.75 2.625 2.5 2.375 2.25 2.125 2 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Input Low Level

Vil (V)
2.6 2.4 2.2

Input Hysteresis Voltage

Vhyst (V)
1.5 1.4 1.3 1.2

2 1.8 1.6 1.4

1.1 1 0.9 0.8 0.7

1.2 1 -50 -25 0 25 50 75 100 125 150 175

0.6 0.5 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

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VN770K
ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) Overvoltage Shutdown Openload Off State Voltage Detection Threshold
Vov (V)
50 47.5 45 3.5 42.5 40 37.5 35 1 32.5 30 -50 -25 0 25 50 75 100 125 150 175 0.5 0 -50 -25 0 25 50 75 100 125 150 175 3 2.5 2 1.5

Vol (V)
5 4.5

Vin=0V
4

Tc (C)

Tc (C)

Turn-on Voltage Slope

dVout/dt(on) (V/ms)
1000 900 800 700 600 500 400

Turn-off Voltage Slope

dVout/dt(off) (V/ms)
500 450

Vcc=13V Rl=13Ohm

400 350 300 250 200

Vcc=13V Rl=13Ohm

300 150 200 100 100 50 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

ILIM Vs Tcase
Ilim (A)
20 18

Vcc=13V
16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

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VN770K
ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES Static Drain Source On Resistance Source-Drain Diode Forward Characteristics
Vsd (mV)
1000 950

Rds(on) (mOhm)
500
Tj= - 40C

450

Vin=0V
900 850 800 750 700 650 600 550 500 0 2 4 6 8 10 12 14 400 350 300 250 200 150 100 50 0 0 0.25 0.5

Vin=2.5V

Tj=25C

Tj=150C

0.75

1.25

Id(A)

Id(A)

Derating Curve

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mOhm)
120 110 100 90 80 70 60 50 40 30 20 10 0 3 3.5 4 4.5 5 5.5 6 6.5 7
Tj= - 40C Tj=25C

Id=3.5A

Tj=150C

Vin(V)

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mOhm)
140

Transconductance
Gfs (S)
20 18

120
Tj=150C

Vds=13V
16 14
Id=6A Id=1A Tj=-40C Tj=25C Tj=150C

100

80

12 10

60

Tj=25C

8
Tj=-40C Id=6A Id=1A Id=6A Id=1A

40

6 4 2

20

0 3 3.5 4 4.5 5 5.5 6 6.5

0 0 1 2 3 4 5 6 7 8

Vin(V)

Id(A)

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VN770K
ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Static Drain-Source On Resistance Vs. Id Transfer Characteristics
Rds(on) (mOhm)
140

Idon(A)
10 9
Tj=25C Tj=-40C Tj=150C

120
Vin=3.5V

Vds=13.5V
8 7
Vin=5V Tj=150C

100

80

6 5

60
Tj=25C

Vin=3.5V Vin=5V Vin=3.5V Tj=-40C Vin=5V

4 3 2 1

40

20

0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Id(A)

Vin(V)

Turn On Current Slope

di/dt(A/us)
8 7 6 5 4 3 2 1 0 100 200 300 400 500 600 700 800 900 1000 1100

Turn On Current Slope

di/dt(A/us)
2.25 2

Vin=5V Vdd=15V Id=3.5A

1.75 1.5 1.25 1 0.75 0.5 0.25 100 200 300 400 500 600 700

Vin=3.5V Vdd=15V Id=3.5A

800

900 1000 1100

Rg(ohm)

Rg(ohm)

Input Voltage Vs. Input Charge

Vin(V)
8 7 6 5

Turn off drain source voltage slope

dv/dt(V/us)
300

250

Vds=12V Id=3.5A
200

Vin=5V Vdd=15V Id=3.5A

150 4 3 2 1 0 0 0 5 10 15 20 25 100 200 300 400 500 600 700 800 900 1000 1100 100

50

Qg(nC)

Rg(ohm)

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VN770K
ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Turn Off Drain-Source Voltage Slope Capacitance Variations
dv/dt(v/us)
300

C(pF)
600

250

500

200

Vin=3.5V Vdd=15V Id=3.5A

f=1MHz Vin=0V
400

150

300
100

50

200

0 100 200 300 400 500 600 700 800 900 1000 1100

100 0 5 10 15 20 25 30 35

Rg(ohm)

Vds(V)

Switching Time Resistive Load

t(us)
5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500

Switching Time Resistive Load

t(ns)
1600

tr Vdd=15V Id=3.5A Vin=5V tr td(off)

1200 1400

tf
1000 800 600

Vdd=15V Id=3.5A Rg=150ohm

td(off)
400

td(on)
200

tf

td(on)
0 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

Rg(ohm)

Vin(V)

Output Characteristics
ID(A)
12 11 10 9 8 7 6 5 4
Vin=3V Vin=5V Vin=4.5V Vin=4V

Normalized On Resistance Vs. Temperature

Rds(on)
2.25

1.75

Vin=5V Id=3.5A

1.5

1.25

1 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13
Vin=2.5V

0.75
Vin=2V

0.5 -50 -25 0 25 50 75 100 125 150 175

VDS(V)

T(C)

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VN770K
ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Normalized Input Threshold Voltage Vs. Current Limit Vs. Junction Temperature Temperature
Vin(th)
1.15 1.1 1.05 1 0.95 10 0.9 9 0.85 0.8 0.75 0.7 -50 -25 0 25 50 75 100 125 150 175 8 7 6 5 -50 -25 0 25 50 75 100 125 150 175

Ilim (A)
15 14

Vds=Vin Id=1mA

13 12 11

Vds=13V Vin=5V

T(C)

Tj (C)

Step Response Current Limit

Tdlim(us)
7

6.5

Vin=5V Rg=150ohm

5.5

4.5

3.5 5 10 15 20 25 30 35

Vdd(V)

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VN770K

SO-28 MECHANICAL DATA

DIM. A a1 b b1 C c1 D E e e3 F L S 7.40 0.40 17.7 10.00 1.27 16.51 7.60 1.27 8 (max.) 0.291 0.016 18.1 10.65 0.10 0.35 0.23 0.50 45 (typ.) 0.697 0.393 0.050 0.650 0.299 0.050 0.713 0.419 mm. MIN. TYP MAX. 2.65 0.30 0.49 0.32 0.004 0.013 0.009 0.020 MIN. inch TYP. MAX. 0.104 0.012 0.019 0.012

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VN770K
SO-28 TUBE SHIPMENT (no suffix) Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
All dimensions are in mm.
A

C B

28 700 532 3.5 13.8 0.6

TAPE AND REEL SHIPMENT (suffix 13TR) REEL DIMENSIONS

Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 16.4 60 22.4

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 12 1.5 1.5 7.5 6.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VN770K

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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