Layer Description Representation
metal
m1 m2 m3 m4 m5
well
nw
polysilicon
poly
contacts & vias
ct v12,v23,v34,v45 nwc pwc
active area
and FETs
ndif pdif nfet pfet
select
nplus pplus prb
Colorplate 1. CMOS layers and representations
(for vanilla 0.25 m CMOS process)
0.3 (contact to contact)
m1 0.36
m2
via contact
0.14 (poly to contact)
poly
0.09 (metal to contact)
poly-m1
poly-m1-m2 overlap overlap
0.14 (ndif to contact)
m1
0.28 (transistor to contact) 0.35
poly
metal-to-poly
n+ contact
Colorplate 4. Design rules regarding contacts and vias.
Overlapping layers are marked by merged colors.
1.2
well (n)
0.6 m1 0.32 m2 0.4
1.2
0.4
0.32
active (n) 0.4
0.3
0.4 m4 0.4
polysilicon m3
0.36
0.24
0.4 0.4
0.44
m5 0.46
0.44 n+
0.1 0.44
select 0.44
p+
contact via
0.44
0.3 0.35
0.44 0.3 0.36
p+
poly
0.14
0.36
transistor 0.44
0.6
well boundary
n+ select p+ select
n-well contact p-well contact
implicit p-substrate
Colorplate 5. Design rules regarding well contacts and
select layers.
n-well contact
Vdd
PMOS
In Out
poly-metal
contact
NMOS
GND
p-well contact
Colorplate 6. m CMOS technology.