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CMOS Layer Design Rules

This document describes the layers and design rules for a 0.25 μm CMOS process. It includes: - A table listing the metal, well, polysilicon, contact/via, and transistor layers and their abbreviations. - Illustrations showing the dimensions of contacts, vias, transistor features, and the overlaps and spacings between layers. - Design rules specifying the minimum distances between wells, contacts, transistors, and other layers.

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Chaitanya Kumar
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0% found this document useful (0 votes)
112 views4 pages

CMOS Layer Design Rules

This document describes the layers and design rules for a 0.25 μm CMOS process. It includes: - A table listing the metal, well, polysilicon, contact/via, and transistor layers and their abbreviations. - Illustrations showing the dimensions of contacts, vias, transistor features, and the overlaps and spacings between layers. - Design rules specifying the minimum distances between wells, contacts, transistors, and other layers.

Uploaded by

Chaitanya Kumar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Layer Description Representation

metal

m1 m2 m3 m4 m5

well

nw

polysilicon

poly

contacts & vias

ct v12,v23,v34,v45 nwc pwc

active area
and FETs
ndif pdif nfet pfet

select

nplus pplus prb

Colorplate 1. CMOS layers and representations


(for vanilla 0.25 m CMOS process)

0.3 (contact to contact)

m1 0.36
m2

via contact
0.14 (poly to contact)
poly

0.09 (metal to contact)

poly-m1
poly-m1-m2 overlap overlap
0.14 (ndif to contact)

m1

0.28 (transistor to contact) 0.35


poly
metal-to-poly
n+ contact

Colorplate 4. Design rules regarding contacts and vias.


Overlapping layers are marked by merged colors.
1.2

well (n)
0.6 m1 0.32 m2 0.4

1.2

0.4
0.32
active (n) 0.4

0.3

0.4 m4 0.4
polysilicon m3
0.36

0.24
0.4 0.4

0.44

m5 0.46
0.44 n+

0.1 0.44
select 0.44
p+
contact via
0.44
0.3 0.35

0.44 0.3 0.36

p+
poly
0.14

0.36

transistor 0.44

0.6
well boundary
n+ select p+ select
n-well contact p-well contact

implicit p-substrate

Colorplate 5. Design rules regarding well contacts and


select layers.

n-well contact

Vdd
PMOS

In Out

poly-metal
contact

NMOS
GND

p-well contact

Colorplate 6. m CMOS technology.

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