RU6099R
N-Channel Advanced Power MOSFET
Features Pin Description
• 60V/120A,
RDS (ON) =6mΩ (Typ.) @VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested TO-220
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• Switching Application Systems
• Inverter Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol Parameter Rating Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 60
V
VGSS Gate-Source Voltage ±25
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Diode Continuous Forward Current TC=25°C ① A
120
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested TC=25°C ② A
380
①
TC=25°C 120
ID Continuous Drain Current A
TC=100°C ①
90
TC=25°C 150
PD Maximum Power Dissipation W
TC=100°C 75
RθJC Thermal Resistance-Junction to Case 1 °C/W
Drain-Source Avalanche Ratings
③
EAS Avalanche Energy, Single Pulsed 625 mJ
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RU6099R
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU6099R
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 V
VDS= 60V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 3 4 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA
④
RDS(ON) Drain-Source On-state Resistance VGS= 10V, IDS=40A 6 7 mΩ
Diode Characteristics
④
VSD Diode Forward Voltage ISD=40A, VGS=0V 1.2 V
trr Reverse Recovery Time 50 ns
ISD=40A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge 95 nC
⑤
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.3 Ω
Ciss Input Capacitance 3000
VGS=0V,
Coss Output Capacitance VDS= 30V, 430 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 240
td(ON) Turn-on Delay Time 14
tr Turn-on Rise Time VDD=30V, RL=30Ω, 17
IDS= 1A, VGEN= 10V, ns
td(OFF) Turn-off Delay Time RG=8Ω 40
tf Turn-off Fall Time 62
⑤
Gate Charge Characteristics
Qg Total Gate Charge 72
VDS=30V, VGS= 10V,
Qgs Gate-Source Charge 13 nC
IDS=40A
Qgd Gate-Drain Charge 24
Notes: ①Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
②Pulse width limited by safe operating area.
③Limited by TJmax, IAS =27A, VDD =48V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
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RU6099R
Typical Characteristics
Power Dissipation Drain Current
ID - Drain Current (A)
Ptot - Power (W)
Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)
Safe Operation Area Thermal Transient Impedance
Normalized Effective Transient
ID - Drain Current (A)
VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec)
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RU6099R
Typical Characteristics
Output Characteristics Drain-Source On Resistance
RDS(ON) - On Resistance (mΩ)
ID - Drain Current (A)
VDS - Drain-Source Voltage (V) ID - Drain Current (A)
Drain-Source On Resistance Gate Threshold Voltage
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C)
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RU6099R
Typical Characteristics
Drain-Source On Resistance Source-Drain Diode Forward
Normalized On Resistance
IS - Source Current (A)
Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)
Capacitance Gate Charge
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)
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RU6099R
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
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RU6099R
Ordering and Marking Information
Device Marking Package Packaging Quantity Reel Size Tape width
RU6099R RU6099R TO-220 Tube 50 - -
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RU6099R
Package Information
TO-220FB-3L
MM INCH MM INCH
SYMBOL SYMBOL
MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX
A 4.40 4.57 4.70 0.173 0.180 0.185 Øp1 1.40 1.50 1.60 0.055 0.059 0.063
A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC 0.1BSC
A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC 0.2BSC
b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260
b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519
C 0.48 0.50 0.52 0.019 0.020 0.021 L1 - - 3.95 - - 0.156
D 15.40 15.60 15.80 0.606 0.614 0.622 L2 2.50REF. 0.098REF.
D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143
DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113
E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9°
E1 - 8.70 - - 0.343 - θ2 1° 3° 5° 1° 3° 5°
E2 9.80 10.00 10.20 0.386 0.394 0.401
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
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RU6099R
Customer Service
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